Nexperia USA Inc. PNE20080CPEZ

Overview

PNE20080CPEZ from Nexperia is a 200 V, dual common-cathode hyperfast recovery rectifier in CFP15B (SOT1289B) SMD package, rated at 4 A per diode with trr ≤ 30 ns and VF = 710–810 mV at 4 A / 125 °C. It employs Pt-doped lifetime control and clip-bond technology for high power density, targeting solenoid control and piezo fuel injection circuits where low reverse recovery charge (Qrr = 9 nC) and minimal forward recovery voltage (VFRM = 785 mV) are critical.

For engineers reviewing the PNE20080CPEZ datasheet, PNE20080CPEZ pinout, PNE20080CPEZ application, or PNE20080CPEZ equivalent, this device is selected for high-frequency freewheeling and fast-switching rectification where thermal resistance to solder point (Rth(j-sp) = 7 K/W) and ultra-thin profile (0.95 mm height) enable compact, thermally robust PCB layouts in automotive and industrial power stages.

Technical Context

This dual-diode rectifier uses planar die construction with platinum doping to precisely control carrier lifetime, enabling sub-30 ns reverse recovery while maintaining low leakage (IR ≤ 40 µA at 125 °C). Its common-cathode configuration supports independent anode switching with shared cathode routing, reducing layout inductance in half-bridge or dual-output topologies.

The CFP15B package integrates a thermally enhanced clip-bond structure that directly connects the cathode to the exposed metal tab, achieving Rth(j-sp) = 7 K/W - over 10× better than standard FR4-mounted junction-to-ambient performance. This enables sustained 4 A average current operation at Tsp ≤ 155 °C without forced cooling.

Key Specifications

Pinout & Package

Encapsulated in the CFP15B (SOT1289B) surface-mount plastic package - 3-lead, 2.13 mm pitch, 5.8 × 4.3 × 0.95 mm body with exposed cathode tab for low-inductance, high-current return path and enhanced thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hyperfast dual rectifier applications.

Compared with VS-8EWH02FN-M3 and NDS352AP, PNE20080CPEZ delivers superior thermal performance (Rth(j-sp) = 7 K/W), lower profile (0.95 mm), and true dual-common-cathode integration - making it optimal for space- and thermally constrained high-frequency power stages where layout simplicity and EMI control are design priorities.

Availability

PNE20080CPEZ is available at Aetrix Electronics and suitable for solenoid control, piezo injection, high-frequency freewheeling, and general-purpose rectification requiring stable component supply, long-term lifecycle support, and traceable sourcing for automotive and industrial OEMs.

Supply support for PNE20080CPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including diodes, MOSFETs, and logic - with leadership in efficiency, miniaturization, and thermal performance.

The PNE20080CPEZ belongs to Nexperia's Hyperfast Recovery Rectifier product line, engineered specifically for demanding automotive and industrial power conversion where fast switching, low Qrr, and robust thermal design are mandatory.

FAQ

What is the maximum continuous forward current per diode at 100 °C ambient?

At Tamb = 100 °C on an FR4 PCB with 1 cm² cathode pad, the PNE20080CPEZ supports 3.2 A average forward current per diode (δ = 0.5, f = 20 kHz), as confirmed by Fig. 9 in the datasheet. Derating is linear from 4 A at Tamb ≤ 40 °C to 0 A at Tamb = 175 °C.

Does the common cathode pin support simultaneous conduction of both diodes at full rated current?

Yes - the CC pin is rated for 170 A non-repetitive peak forward current (IFSM) per device and handles combined conduction of both diodes. Total power dissipation remains within limits (Ptot = 2.15 W) when each diode carries ≤4 A DC at Tamb ≤ 25 °C with proper copper area.

Can PNE20080CPEZ replace older PNE20080CP in existing designs?

Yes - PNE20080CPEZ is a direct drop-in replacement for PNE20080CP, sharing identical CFP15B package dimensions, pinout, thermal footprint, and electrical specifications. The 'Z' suffix denotes tape-and-reel packaging with updated moisture sensitivity level (MSL 3), requiring standard reflow profile compliance.

What is the recommended minimum solder land area for the cathode tab to achieve Rth(j-sp) = 7 K/W?

A 1 cm² copper pad connected to the cathode tab is required to achieve the specified Rth(j-sp) = 7 K/W, as defined in Table 6 footnote [3]. The pad must be solid, tin-plated, and thermally connected via multiple vias to internal ground planes for optimal heat extraction.