Nexperia USA Inc. PNE20080EPE-QZ
- Part No.:
- PNE20080EPE-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- TO-277, 3-PowerDFN
- Datasheet:
-
PNE20080EPE-QZ.pdf
- Description:
- DIODE GEN PURP 200V 8A CFP15B
- Quantity:
- Payment:

- Shipping:

Inventory:4,990
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PNE20080EPE-QZ from Nexperia is a 200 V, 8 A hyperfast recovery rectifier in CFP15B (SOT1289B) package, featuring trr ≤ 30 ns, VF = 740–810 mV at 8 A/125 °C, and AEC-Q101 qualification for automotive ECU power rails and freewheeling paths.
For engineers reviewing the PNE20080EPE-QZ datasheet, PNE20080EPE-QZ pinout, PNE20080EPE-QZ application, or PNE20080EPE-QZ equivalent, key selection criteria include reverse recovery time under ramp conditions (trr ≤ 20 ns), thermal resistance to solder point (Rth(j-sp) = 70 K/W), and dual-anode planar die architecture enabling high-current density in ultra-thin SMD form.
Technical Context
This hyperfast rectifier uses Pt-doped lifetime control and planar die technology to achieve sub-30 ns reverse recovery with low Qrr and minimal VFRM (≤790 mV), optimized for high-frequency switching in DC-DC converters and motor drive snubbers.
Its clip-bond construction and dual-anode (A1/A2) cathode (K) terminal layout support high-current conduction while minimizing parasitic inductance and thermal resistance-critical for engine control units operating up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR / VRRM | 200 V - Maximum repetitive reverse voltage; defines safe blocking capability in 24 V automotive systems with load dump transients. |
| IF(AV) | 8 A - Average forward current at δ = 0.5, 20 kHz square wave, Tsp ≤ 169 °C; supports continuous operation in ECU power stages. |
| trr (ramp) | 20 ns - Reverse recovery time at dIF/dt = 50 A/µs; enables >500 kHz switching without excessive switching loss or EMI. |
| VF @ 8 A / 125 °C | 740–810 mV - Forward voltage drop; determines conduction loss and thermal rise in high-duty-cycle freewheeling paths. |
| Rth(j-sp) | 70 K/W - Junction-to-solder-point thermal resistance on 1 cm² cathode pad; enables efficient heat extraction in space-constrained PCB layouts. |
| IR @ 200 V / 125 °C | 2.5–20 µA - High-temperature reverse leakage; ensures stable blocking performance during hot idle conditions in under-hood applications. |
Pinout & Package
Encapsulated in CFP15B (SOT1289B): ultra-thin surface-mount plastic package, 5.8 × 4.3 × 0.95 mm body, 2.13 mm lead pitch, thermal-enhanced clip-bond construction with exposed cathode tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode 1 | Primary anode connection; electrically tied to A2 internally; enables parallel routing for low-inductance high-current input paths. |
| 2 (A2) | Anode 2 | Secondary anode terminal; used with A1 to distribute current and reduce trace inductance in high-di/dt applications. |
| 3 (K) | Cathode | Main cathode output node with large-area metal tab; serves as primary thermal path to PCB copper; soldered directly to thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Hyperfast recovery | trr ≤ 20 ns (ramp), enabling clean turn-off in >500 kHz SMPS and reducing switching losses by >35% vs standard fast rectifiers. |
| AEC-Q101 qualified | Stress-tested per automotive discrete standard; validated for 15-year life in engine bay environments up to 175 °C junction temperature. |
| Low-profile SMD package | 0.95 mm max height; allows integration into compact ECU modules where height clearance is limited to <1.0 mm. |
| Clip-bond thermal design | Rth(j-sp) = 70 K/W on 1 cm² pad; delivers 2.15 W total power dissipation-30% higher than comparable SOD-123F devices. |
| Dual-anode configuration | Two separate anode terminals (A1/A2); reduces effective series inductance by splitting high di/dt return paths across two leads. |
Applications
| Engine Control Unit (ECU) Power Supply | Reverse Polarity Protection |
|---|---|
|
Use Scenario: Input rectification and freewheeling in 12 V/24 V automotive DC-DC converters powering microcontrollers, sensors, and actuators. IC Role / Device Role / Timing Role: Hyperfast rectifier handling 8 A average current with <30 ns trr to minimize switching loss and voltage overshoot during MOSFET turn-off. Use Value: Enables >92% efficiency at 300 kHz switching frequency while maintaining <100 °C junction temperature under full load. |
Use Scenario: Series-connected protection in battery feed lines to prevent damage from accidental reverse battery connection. IC Role / Device Role / Timing Role: Low-VF, high-reliability rectifier conducting forward current while blocking reverse voltage up to 200 V during fault events. Use Value: Withstands 170 A non-repetitive surge (IFSM) and maintains <1 µA leakage at 125 °C-ensuring fail-safe behavior over vehicle lifetime. |
| Freewheeling Diode in BLDC Motor Drivers | High-Frequency Snubber in Ignition Coils |
|
Use Scenario: Freewheeling path for phase-leg inverter switches in electric power steering (EPS) and HVAC blower motors. IC Role / Device Role / Timing Role: Dual-anode rectifier absorbing inductive kickback with minimal VFRM (<790 mV) and low stored charge (Qrr). Use Value: Reduces voltage spikes by 22% compared to standard fast recovery diodes, eliminating need for external RC snubbers. |
Use Scenario: Snubbing diode across primary windings of gasoline engine ignition coils operating at 50–100 Hz with high di/dt edges. IC Role / Device Role / Timing Role: Ultra-fast recovery device clamping flyback energy within 20 ns to suppress EMI and protect driver transistors. Use Value: Limits peak reverse recovery voltage to <790 mV, preventing secondary breakdown in IGBT drivers during repeated coil discharge cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hyperfast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06D | 600 V VRRM, 8 A IF(AV), trr = 35 ns (step), VF = 1.7 V @ 8 A/25 °C | Higher voltage rating but slower recovery and higher VF; suited for 48 V industrial systems, not automotive 12/24 V ECU rails. | Select only if system requires >200 V blocking; avoid for high-frequency ECU designs due to 1.7× higher conduction loss and 75% longer trr. |
| ONsemi MUR820CT | 200 V VRRM, 8 A IF(AV), trr = 35 ns (step), TO-220AB package, Rth(j-a) = 35 K/W | Through-hole package with superior thermal resistance but 4.5× larger footprint and no AEC-Q101 qualification. | Use only in non-automotive, space-tolerant designs requiring lower thermal resistance; unsuitable for SMT production or under-hood vibration environments. |
Compared with STTH8R06D and MUR820CT, PNE20080EPE-QZ delivers optimal balance of ultra-low trr (20 ns), AEC-Q101 compliance, and ultra-thin SMD packaging-making it the sole choice for high-density, high-reliability automotive power conversion where height, frequency, and qualification are non-negotiable.
Availability
PNE20080EPE-QZ is available at Aetrix Electronics and suitable for Engine Control Units, reverse polarity protection circuits, freewheeling paths in BLDC motor drives, and ignition coil snubbers requiring stable component supply across automotive production lifecycles.
Supply support for PNE20080EPE-QZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and analog devices-with manufacturing rooted in process innovation and automotive-grade quality systems.
PNE20080EPE-QZ belongs to Nexperia's AEC-Q101-qualified hyperfast rectifier product line, engineered specifically for automotive power conversion where low trr, low VF, and ultra-thin SMD packaging are critical for next-generation ECUs and electrified subsystems.
FAQ
What is the maximum junction temperature and how is it validated?
The PNE20080EPE-QZ has a rated maximum junction temperature of 175 °C, verified through AEC-Q101 stress testing including high-temperature operating life (HTOL) and temperature cycling. Its thermal performance is characterized with Rth(j-sp) = 70 K/W on a 1 cm² cathode pad, enabling sustained operation at this limit in automotive under-hood environments when mounted per recommended footprint.
Does the dual-anode configuration require separate PCB traces?
Yes-pins A1 and A2 are electrically isolated terminals connected to the same internal anode region. They must be routed on separate PCB traces to exploit the inductance reduction benefit; paralleling them on a single net forfeits the low-inductance advantage. The datasheet specifies independent 2.13 mm pitch and recommends symmetric layout for balanced current sharing.
How does trr vary between step and ramp recovery test conditions?
trr is 15–30 ns under step recovery (IF = 0.5 A, IR = 1 A) and 20 ns under ramp recovery (dIF/dt = 50 A/µs). Ramp recovery reflects real-world switching in PWM converters more accurately; the 20 ns value governs design margins for EMI suppression and voltage overshoot control in high-di/dt applications like motor drives.
Is the marking code "200E" sufficient for full traceability?
Yes-the top-side marking "200E" is the official Nexperia type identification code for PNE20080EPE-QZ per Table 4 of the datasheet. Combined with date code and factory code (visible under magnification), it enables full lot-level traceability back to wafer fab and assembly site, satisfying IATF 16949 requirements for automotive production.
PNE20080EPE-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-277, 3-PowerDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- 86pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CFP15B
- Operating Temperature - Junction:
- 175°C
PNE20080EPE-QZ FAQ
1.How can I place an order for PNE20080EPE-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PNE20080EPE-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PNE20080EPE-QZ reliable?
The price and inventory of PNE20080EPE-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PNE20080EPE-QZ is usually 5 days.
3.What payment methods are accepted for PNE20080EPE-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PNE20080EPE-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PNE20080EPE-QZ?
PNE20080EPE-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PNE20080EPE-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PNE20080EPE-QZ?
For technical support, including PNE20080EPE-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PNE20080EPE-QZ requirements.
6.How does Aetrix verify that PNE20080EPE-QZ is sourced from the original manufacturer or authorized distributors?
All PNE20080EPE-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PNE20080EPE-QZ meets industry standards.
7.What is the process for return or replacement of PNE20080EPE-QZ?
All PNE20080EPE-QZ units undergo pre-shipment inspection (PSI). If there is an issue with PNE20080EPE-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PNE20080EPE-QZ part is unused and in its original packaging.
Return procedure for PNE20080EPE-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PNE20080EPE-QZ Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
