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Nexperia USA Inc. PNU650200AEJJ

Part No.:
PNU650200AEJJ
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Datasheet:
AetrixPNU650200AEJJ.pdf
Description:
PNU650200AEJ/SOT8018/TO263-2L
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:800

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Product details

Overview

PNU650200AEJJ from Nexperia is a 650 V, 20 A ultrafast recovery rectifier in D2PAK Real-2-Pin (SOT8018) package, designed for high-frequency switching in power conversion stages. It features 32 ns typical reverse recovery time, Pt-doped lifetime control, and low-inductance planar die construction, enabling efficient operation in SMPS, UPS, and battery charger topologies.

For engineers reviewing the PNU650200AEJJ datasheet, PNU650200AEJJ pinout, PNU650200AEJJ application, or PNU650200AEJJ equivalent, key selection criteria include trr at 20 A/−200 A/µs (112 ns @ 25 °C), VF of 1.33 V @ 20 A/25 °C, thermal resistance Rth(j-c) of 1.7 K/W, and mounting-base-connected cathode configuration for enhanced thermal management.

Technical Context

This rectifier employs Pt-doped silicon planar technology to achieve precise carrier lifetime control, enabling ultrafast recovery with minimal tail current. Its Real-2-Pin D2PAK (SOT8018) package integrates the cathode mounting base as an electrically connected terminal, reducing parasitic inductance and improving thermal conduction to the PCB.

The device operates with trr values ranging from 32 ns (step recovery, 0.5 A) to 179 ns (ramp recovery, 20 A/−200 A/µs @ 125 °C), and exhibits Qrr from 451 nC to 2122 nC depending on dIF/dt and junction temperature - critical parameters for EMI suppression and snubber design in hard-switched converters.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 650 V - Maximum repetitive reverse voltage before avalanche; defines safe blocking capability in 400 V DC-link applications with margin.
IF(AV) 20 A - Average forward current at Tc ≤ 120 °C with 50% duty cycle; supports continuous conduction mode operation in 500–1000 W converters.
trr (typ) 32 ns - Typical step-recovery time at IF = 0.5 A; enables >1 MHz switching in resonant or quasi-resonant topologies with low switching loss.
VF @ 20 A 1.33 V @ 25 °C - Forward voltage drop defining conduction loss; contributes ~26.6 W dissipation per diode at full load.
Rth(j-c) 1.7 K/W - Junction-to-case thermal resistance measured at cathode solder point; enables direct heatsinking via mounting base for high-power density layouts.
Qrr @ 20 A 909 nC @ 25 °C / −1000 A/µs - Reverse recovery charge determining turn-off loss and EMI generation in hard-switched bridges.
IRM @ 20 A 22.4 A @ 25 °C / −1000 A/µs - Peak reverse recovery current affecting snubber sizing and MOSFET/FET stress during commutation.

Pinout & Package

Encapsulated in D2PAK Real-2-Pin (SOT8018) package: 8.8 mm × 10.35 mm × 4.46 mm body, 5.08 mm lead pitch, with integrated copper mounting base thermally and electrically tied to cathode.

Pin/Terminal Circuit Role Design Meaning
1 K (cathode) Main current exit terminal; electrically and thermally connected to mounting base for low-inductance, high-current return path.
2 A (anode) Main current entry terminal; isolated from mounting base to enable standard half-bridge or freewheeling placement.
mb Mounting base Electrically tied to cathode (Pin 1); provides primary thermal interface to PCB copper pour or heatsink - not a signal pin.

Key Features

Feature Design Value
Ultrafast trr 32 ns typical (step recovery) ensures minimal switching loss and reduced EMI in >300 kHz SMPS designs.
Pt-doped lifetime control Enables precise tail-current suppression and stable trr across temperature - critical for consistent hard-switching behavior.
Low-inductance planar die Reduces voltage overshoot during diode turn-off, lowering snubber requirements and improving system efficiency.
Real-2-Pin D2PAK Eliminates internal bond wires between die and terminals; cathode base directly soldered to PCB for <0.5 nH parasitic inductance.
High thermal conductivity base Mounting base (mb) delivers 1.7 K/W Rth(j-c), supporting >20 A continuous operation with minimal case temperature rise.

Applications

AC/DC Converter DC/DC Converter

Use Scenario: Primary-side boost PFC stage in 600–1000 W server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Ultrafast output rectifier in continuous conduction mode (CCM) boost diode position, handling 20 A average current with minimal reverse recovery loss.

Use Value: 32 ns trr and 909 nC Qrr reduce turn-off losses by ≥35% vs. standard fast recovery diodes, improving overall PFC efficiency to >96%.

Use Scenario: Secondary-side synchronous rectification assist in isolated LLC resonant DC/DC converters for telecom rectifiers.

IC Role / Device Role / Timing Role: Freewheeling clamp diode in active clamp forward or asymmetrical half-bridge topologies, managing 20 A peak currents at 500 kHz.

Use Value: Low VF (1.33 V @ 25 °C) and stable trr up to 125 °C ensure predictable timing margins for gate driver dead-time optimization.

UPS Inverter Stage Battery Charger Output Stage

Use Scenario: Output bridge freewheeling path in 3 kVA online UPS inverters using Si IGBTs or SiC MOSFETs.

IC Role / Device Role / Timing Role: Anti-parallel recovery diode in IGBT modules or discrete half-bridge, clamping inductive kickback during zero-voltage switching transitions.

Use Value: 179 ns trr @ 125 °C and 12 A IRM ensure robust commutation without shoot-through risk under elevated ambient conditions.

Use Scenario: Output rectification in multi-stage EV on-board chargers (OBC) converting 400 V DC to 12 V/24 V auxiliary rails.

IC Role / Device Role / Timing Role: High-current output rectifier in dual-active-bridge (DAB) secondary side, conducting 20 A average with 50 kHz square-wave excitation.

Use Value: 1.7 K/W Rth(j-c) and cathode-mounted base allow direct thermal coupling to aluminum heatsink, maintaining Tj < 150 °C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH2006D 600 V VRRM, TO-220AC package, trr = 45 ns @ 20 A, VF = 1.7 V @ 20 A/25 °C, Rth(j-c) = 2.5 K/W Higher VF and slower trr increase conduction and switching loss; requires larger heatsink due to higher thermal resistance. Prefer when cost sensitivity outweighs efficiency targets and board space allows TO-220 footprint.
IXYS MUR2060CT 600 V VRRM, TO-220AB dual common-cathode, trr = 35 ns @ 10 A, VF = 1.85 V @ 20 A/25 °C, no integrated thermal base Dual-diode configuration adds layout complexity; higher VF and lack of mounting base limit power density in compact designs. Choose only if dual-diode topology is required and thermal constraints permit discrete heatsinking.

Compared with STTH2006D and IXYS MUR2060CT, PNU650200AEJJ offers superior 650 V rating, lower VF, faster trr, and integrated thermal base - delivering higher power density and efficiency in space-constrained, high-frequency AC/DC and DC/DC converters.

Availability

PNU650200AEJJ is available at Aetrix Electronics and suitable for AC/DC converters, UPS inverters, and battery charger output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded OEM programs.

Supply support for PNU650200AEJJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in silicon power components and advanced packaging.

This part belongs to Nexperia's ultrafast recovery rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial SMPS, renewable energy interfaces, and EV infrastructure systems.

FAQ

What is the maximum junction temperature and how is it enforced?

The absolute maximum junction temperature is 175 °C, defined per IEC 60134 limiting values. Operation beyond this temperature causes irreversible degradation. Thermal design must use Rth(j-c) = 1.7 K/W and ensure case temperature stays ≤120 °C under worst-case load and ambient conditions, verified via infrared measurement or thermal simulation.

Is the mounting base electrically isolated from the cathode?

No - the mounting base (mb) is electrically connected to Pin 1 (cathode), as confirmed in Table 2 "Pinning information" and Figure 17 package outline. This connection is intentional for low-inductance current return and thermal conduction; PCB layout must treat the base pad as part of the cathode net.

How does trr vary with dIF/dt and temperature?

trr increases with both higher dIF/dt and elevated junction temperature: at 20 A/−200 A/µs, trr is 112 ns @ 25 °C but rises to 179 ns @ 125 °C; at −1000 A/µs, trr drops to 67 ns @ 25 °C and 99 ns @ 125 °C. These values are measured per ramp recovery definition in Figure 14 and Table 7.

Can PNU650200AEJJ replace standard FRD or FRED diodes in existing designs?

Yes - it is a direct upgrade for 600–650 V, 20 A fast recovery diodes in D2PAK packages, offering lower VF, faster trr, and better thermal performance. However, layout must accommodate its Real-2-Pin pinout (cathode base connection) and verify snubber component values due to reduced Qrr and IRM.

PNU650200AEJJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
60 ns
Current - Reverse Leakage @ Vr:
5 µA @ 650 V
Capacitance @ Vr, F:
10pF @ 400V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK R2P
Operating Temperature - Junction:
175°C

PNU650200AEJJ FAQ

1.How can I place an order for PNU650200AEJJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PNU650200AEJJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PNU650200AEJJ reliable?

The price and inventory of PNU650200AEJJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PNU650200AEJJ is usually 5 days.

3.What payment methods are accepted for PNU650200AEJJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PNU650200AEJJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PNU650200AEJJ?

PNU650200AEJJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PNU650200AEJJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PNU650200AEJJ?

For technical support, including PNU650200AEJJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PNU650200AEJJ requirements.

6.How does Aetrix verify that PNU650200AEJJ is sourced from the original manufacturer or authorized distributors?

All PNU650200AEJJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PNU650200AEJJ meets industry standards.

7.What is the process for return or replacement of PNU650200AEJJ?

All PNU650200AEJJ units undergo pre-shipment inspection (PSI). If there is an issue with PNU650200AEJJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PNU650200AEJJ part is unused and in its original packaging.

Return procedure for PNU650200AEJJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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