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Nexperia USA Inc. PNU650200EJ-QJ
- Part No.:
- PNU650200EJ-QJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), Variant
- Datasheet:
-
PNU650200EJ-QJ.pdf
- Description:
- 650V, 20A ULTRAFAST RECOVERY REC
- Quantity:
- Payment:
- Shipping:
Inventory:761
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Product details
Overview
PNU650200EJ-QJ from Nexperia is a 650 V, 20 A ultrafast recovery rectifier in D2PAK Real-2-Pin (SOT8018) package, designed for high-efficiency power conversion in automotive-grade systems. It delivers trr = 32 ns (typical), VF = 1.25 V at 20 A and 25 °C, and is qualified to AEC-Q101. Its Pt-doped lifetime control enables precise switching behavior in on-board chargers and DC/DC converters.
For engineers reviewing the PNU650200EJ-QJ datasheet, PNU650200EJ-QJ pinout, PNU650200EJ-QJ application, or PNU650200EJ-QJ equivalent, this device supports high-frequency freewheeling, low-inductance layout integration, and thermal management via cathode-mounted base - critical for 800 V EV powertrain subsystems requiring stable reverse recovery performance.
Technical Context
This planar silicon rectifier uses platinum diffusion for controlled carrier lifetime, enabling ultrafast trr with minimal Qrr and IRM trade-offs across temperature. Its Real-2-Pin configuration isolates mounting base (mb) electrically as cathode extension, reducing parasitic inductance in high-dI/dt switching paths.
The device operates up to Tj = 175 °C with Rth(j-c) = 1.5 K/W (cathode solder point), supporting forced-air or heatsink-cooled operation in compact inverters. Reverse recovery is characterized under ramp conditions (dIF/dt = −200 to −1000 A/µs), with trr increasing from 119 ns to 189 ns as junction temperature rises from 25 °C to 125 °C at 400 V VR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage before breakdown; defines safe blocking capability in 800 V bus systems with margin. |
| IF(AV) | 20 A - Average forward current at Tc ≤ 130 °C with 50% duty cycle; supports continuous conduction mode in high-power AC/DC stages. |
| trr (typ) | 32 ns - Typical reverse recovery time at IF = 0.5 A, IR = 1 A, Tj = 25 °C; enables >1 MHz switching in resonant topologies. |
| VF @ 20 A, 25 °C | 1.25 V - Forward voltage drop at rated current; determines conduction loss of ~25 W per device at full load. |
| Qrr (typ) | 588 nC - Reverse recovery charge at dIF/dt = −200 A/µs, VR = 400 V, Tj = 25 °C; directly impacts EMI and snubber sizing. |
| Rth(j-c) | 1.5 K/W - Thermal resistance from junction to cathode mounting point; enables direct heatsink attachment for efficient power dissipation. |
| IRM (typ) | 8 A - Peak reverse recovery current under same conditions as trr; sets di/dt stress on gate drivers and layout parasitics. |
Pinout & Package
Encapsulated in D2PAK Real-2-Pin (SOT8018), the package features a thermally enhanced cathode tab (mb) electrically tied to pin 1, enabling low-inductance, high-current PCB mounting with dedicated 6 cm² copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K (cathode) | Main current exit path; electrically connected to mounting base (mb) for low-impedance thermal and electrical return. |
| 2 | A (anode) | Main current entry path; isolated terminal optimized for high-voltage standoff and minimal stray capacitance. |
| mb | Cathode mounting base | Exposed metal tab soldered to PCB; provides primary thermal conduction path and reduces loop inductance vs. standard 3-pin D2PAK. |
Key Features
| Feature | Design Value |
|---|---|
| Pt-doped lifetime control | Enables precise trr tuning without compromising VF or leakage, delivering consistent 32 ns recovery across production lots. |
| Real-2-Pin (R2P) configuration | Eliminates internal bond wire between cathode and mounting base, reducing package inductance by >30% vs. conventional D2PAK. |
| AEC-Q101 qualification | Validated for automotive underhood environments including temperature cycling, HTRB, and ESD testing - suitable for OBC and traction inverter auxiliary supplies. |
| Low Qrr / IRM ratio | 588 nC / 8 A at 25 °C yields <74 ns effective recovery time, minimizing commutation losses in SiC-based half-bridges. |
| High Tj rating (175 °C) | Supports operation in confined spaces near power modules without derating, extending usable life in battery thermal management circuits. |
Applications
| On-Board Charger (OBC) | DC/DC Converter |
|---|---|
Use Scenario: High-frequency secondary-side rectification in 3.3 kW–22 kW bidirectional OBCs using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Ultrafast freewheeling diode in synchronous rectifier stage, clamping transformer leakage inductance during dead-time. Use Value: 32 ns trr minimizes voltage overshoot and reduces snubber losses by 40% compared to standard fast recovery diodes at 100 kHz switching. |
Use Scenario: Isolated 400 V–800 V to 12 V/48 V DC/DC conversion for vehicle domain controllers and ADAS ECUs. IC Role / Device Role / Timing Role: Output rectifier in active clamp flyback or LLC resonant converter, handling 20 A continuous output current. Use Value: Low VF (1.25 V) and Rth(j-c) = 1.5 K/W enable >95% efficiency at full load while maintaining Tj < 150 °C on 6 cm² copper. |
| Inverter Auxiliary Supply | Battery Thermal Management |
Use Scenario: Bootstrap supply rectification and gate drive decoupling in 800 V traction inverters with SiC MOSFETs. IC Role / Device Role / Timing Role: Fast-recovery clamp diode in high-side gate driver bootstrap circuit, sustaining 650 V reverse bias during high dv/dt transitions. Use Value: VRRM = 650 V with 100% margin over 400 V rail ensures robustness against transients; trr < 120 ns prevents shoot-through risk. |
Use Scenario: Power switching in battery heating/cooling PTC resistor control circuits operating at 400 V nominal. IC Role / Device Role / Timing Role: Freewheeling path for PWM-driven relay coils and contactor snubbers in thermal valve actuation modules. Use Value: AEC-Q101 qualification guarantees reliability over 15-year vehicle lifecycle; low IR (<5 µA at 25 °C) prevents standby power drain. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH2006D | 600 V VRRM, 20 A IF(AV), trr = 45 ns (typ), TO-220AC package, no AEC-Q101 qualification | Lacks automotive qualification; higher trr increases switching loss in >100 kHz designs | Select only for industrial non-automotive DC/DC where cost outweighs reliability and efficiency requirements |
| IXYS MUR2060CT | 600 V VRRM, dual common-cathode configuration, trr = 35 ns (typ), TO-220AB package, no AEC-Q101 | Dual-diode format adds layout complexity; lacks R2P thermal path and automotive validation | Use only when dual-diode topology is mandatory and thermal constraints allow TO-220 mounting |
Compared with STTH2006D and IXYS MUR2060CT, PNU650200EJ-QJ offers higher blocking voltage (650 V vs. 600 V), lower trr (32 ns vs. ≥35 ns), AEC-Q101 compliance, and superior thermal performance via R2P cathode mounting - making it the only option qualified for safety-critical automotive power conversion.
Availability
PNU650200EJ-QJ is available at Aetrix Electronics and suitable for on-board chargers, DC/DC converters, and battery thermal management systems requiring stable component supply across multi-year automotive production programs.
Supply support for PNU650200EJ-QJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
This device belongs to Nexperia's AEC-Q101-qualified ultrafast rectifier product line, engineered specifically for high-efficiency, high-temperature power conversion in electric vehicle subsystems such as OBCs, DC/DCs, and inverters.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF(AV) = 20 A at Tc ≤ 130 °C with 50% duty cycle. At Tc = 118 °C, the device supports IF = 28 A (DC), but thermal design must ensure junction temperature remains ≤175 °C. Derating is required above 130 °C case temperature to maintain reliability and avoid exceeding Rth(j-c) limits.
Is the mounting base (mb) electrically isolated from the cathode?
No - the mounting base is internally connected to pin 1 (cathode), forming a single low-impedance node. This Real-2-Pin configuration eliminates bond wires between cathode and mb, reducing inductance and improving thermal transfer. PCB layout must treat mb as part of the cathode net, not a separate ground plane.
How does trr vary with dIF/dt and temperature?
At Tj = 25 °C and VR = 400 V, trr increases from 119 ns at dIF/dt = −200 A/µs to 70 ns at −1000 A/µs. At Tj = 125 °C, trr rises to 189 ns (−200 A/µs) and 99 ns (−1000 A/µs). This inverse dIF/dt dependence reflects carrier sweep-out dynamics, critical for snubberless SiC gate driver design.
Can PNU650200EJ-QJ replace standard FRD or FRED diodes in existing designs?
Yes - it is pin-compatible with standard D2PAK rectifiers but requires verification of cathode-mounting thermal interface and PCB copper area (6 cm² recommended). Its lower trr and Qrr reduce EMI and switching losses, but layout must minimize anode loop inductance to avoid voltage spikes exceeding VRRM during fast recovery.
PNU650200EJ-QJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), Variant
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 1.55 V @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 60 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 650 V
- Capacitance @ Vr, F:
- 13pF @ 400V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK R2P
- Operating Temperature - Junction:
- 175°C
PNU650200EJ-QJ FAQ
1.How can I place an order for PNU650200EJ-QJ through Aetrix?
Please submit a Request for Quotation (RFQ) for PNU650200EJ-QJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PNU650200EJ-QJ reliable?
The price and inventory of PNU650200EJ-QJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PNU650200EJ-QJ is usually 5 days.
3.What payment methods are accepted for PNU650200EJ-QJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PNU650200EJ-QJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PNU650200EJ-QJ?
PNU650200EJ-QJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PNU650200EJ-QJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PNU650200EJ-QJ?
For technical support, including PNU650200EJ-QJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PNU650200EJ-QJ requirements.
6.How does Aetrix verify that PNU650200EJ-QJ is sourced from the original manufacturer or authorized distributors?
All PNU650200EJ-QJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PNU650200EJ-QJ meets industry standards.
7.What is the process for return or replacement of PNU650200EJ-QJ?
All PNU650200EJ-QJ units undergo pre-shipment inspection (PSI). If there is an issue with PNU650200EJ-QJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PNU650200EJ-QJ part is unused and in its original packaging.
Return procedure for PNU650200EJ-QJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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