Nexperia USA Inc. PSC1065H-QJ

Overview

PSC1065H-QJ from Nexperia is a 650 V, 10 A Silicon Carbide Schottky diode in DPAK R2P (SOT8017) package, engineered as a high-reliability, zero-recovery rectifier for high-frequency power conversion stages. It delivers 1.5 V forward voltage at 10 A and 25 °C, 22 nC total capacitive charge at 400 V, and operates up to 175 °C junction temperature - enabling use in server PSUs and photovoltaic inverters where thermal robustness and switching loss reduction are critical.

For engineers reviewing the PSC1065H-QJ datasheet, PSC1065H-QJ pinout, PSC1065H-QJ application, or PSC1065H-QJ equivalent, key selection criteria include its Merged PiN Schottky (MPS) architecture for IFSM robustness, temperature-independent switching behavior, low Qc × VF figure-of-merit, and compatibility with high-dv/dt (100 V/ns) environments in hard-switched topologies.

Technical Context

This SiC Schottky diode uses a Merged PiN Schottky (MPS) structure to combine low forward voltage with high surge current capability (IFSM = 42 A at Tc = 150 °C). Its zero reverse recovery eliminates tail current and associated switching losses, while its 2.6 K/W typical junction-to-case thermal resistance supports high-power-density layouts.

The device exhibits stable capacitance (36 pF at VR = 400 V, 1 MHz) and reverse leakage (<120 µA at 650 V, 150 °C), enabling predictable EMI performance and reliable operation across wide temperature and voltage ranges in DC-DC and AC-DC converters.

Key Specifications

Pinout & Package

Package: DPAK R2P (SOT8017), surface-mount plastic package with Real-2-Pin configuration, 4.58 mm pitch, 6.16 mm × 6.54 mm × 2.29 mm body. Mounting base (mb) is electrically connected to cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C4D10120A and SCT310BR, PSC1065H-QJ offers the lowest thermal resistance among SMT 650 V/10 A SiC diodes and the smallest footprint (SOT8017), making it optimal for space-constrained, high-power-density applications requiring minimal thermal interface layers and no lead-frame reflow concerns.

Availability

PSC1065H-QJ is available at Aetrix Electronics and suitable for server power supply, photovoltaic inverter, and telecom rectifier applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial production programs.

Supply support for PSC1065H-QJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The PSC1065H-QJ belongs to Nexperia's high-voltage SiC Schottky diode product line, designed specifically for next-generation power conversion systems demanding zero-recovery performance, high-temperature operation, and high power density in SMT form factors.

FAQ

What is the maximum allowable case temperature for continuous operation?

The PSC1065H-QJ supports continuous forward current up to 10 A at case temperature (T_c) ≤ 122 °C, per datasheet limiting values. At T_c = 122 °C, thermal resistance limits junction temperature to 175 °C - the absolute maximum rated T_j. Derating is required above this T_c; Fig. 3 confirms 10 A is the upper limit at that boundary.

Is the mounting base electrically isolated from the anode?

Yes. The mounting base (mb) is internally connected only to Pin 1 (cathode), as confirmed in Table 2 pinning information and Figure 11 package outline. Pin 2 (anode) is fully isolated from the base, enabling safe use in configurations where the cathode must be grounded or thermally coupled without shorting the anode node.

Does PSC1065H-QJ require a gate resistor or driver circuit?

No. As a passive Schottky diode, PSC1065H-QJ has no gate terminal and requires no driver or gate resistor. It operates solely based on applied voltage polarity and current direction. Its zero-recovery behavior eliminates the need for timing-critical gate control, unlike MOSFETs or IGBTs used in active switching roles.

How does its Q_C compare to silicon diodes in the same package?

At VR = 400 V, PSC1065H-QJ's Q_C = 22 nC is ~85% lower than equivalent 650 V silicon FRDs (e.g., BYV26E: Q_C ≈ 150 nC). This directly reduces turn-off energy loss (E = ∫V × I dt) and enables higher switching frequencies without proportional efficiency degradation - a key enabler for compact magnetics and reduced filter size.