Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PSC1665JJ

Part No.:
PSC1665JJ
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Datasheet:
AetrixPSC1665JJ.pdf
Description:
SIC DIODES AND FETS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PSC1665JJ from Nexperia is a 650 V, 16 A silicon carbide (SiC) Schottky diode in D2PAK R2P (SOT8018) package, engineered for high-efficiency power conversion with zero reverse recovery, temperature-independent switching, and low QC × VF figure-of-merit. It serves as a freewheeling or output rectifier in high-frequency DC-DC converters operating up to 175 °C junction temperature.

For engineers reviewing the PSC1665JJ datasheet, PSC1665JJ pinout, PSC1665JJ application, or PSC1665JJ equivalent, this device is selected for ultra-low-loss SMPS designs requiring robust surge handling (IFSM = 65 A), stable capacitance across temperature, and reduced EMI in server and photovoltaic inverter topologies.

Technical Context

This Merged PiN Schottky (MPS) diode combines SiC's wide-bandgap advantages with a real-2-pin configuration that ties the mounting base electrically to the cathode. Its zero-recovery behavior eliminates reverse recovery charge (Qrr = 0) and associated switching losses, enabling operation at >500 kHz without snubbers.

The device delivers stable dynamic performance across –55 °C to 175 °C: forward voltage drift is linearly modeled (VF = Vth + Rdiff × IF), and capacitive charge (QC = 34 nC at VR = 400 V) remains invariant with temperature-critical for consistent timing in resonant LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 650 V - Maximum repetitive reverse blocking voltage; enables use in 400 V AC-DC front-ends and 800 V DC bus systems with margin.
IF 16 A continuous at Tc ≤ 120 °C - Sustains full rated current with case heatsinking; supports 500 W–1 kW power stages.
QC 34 nC at VR = 400 V - Total capacitive charge determining turn-off energy loss; directly impacts EMI filter sizing and snubber design.
VF 1.5–1.8 V at IF = 16 A, Tj = 25 °C - Low conduction loss enabling >98% efficiency in high-current synchronous rectification paths.
IFSM 65 A (10 ms, half-sine, Tc = 150 °C) - High non-repetitive surge capability for inrush and fault conditions without bond-wire fusing.
Rth(j-c) 1.3–1.7 K/W - Junction-to-case thermal resistance defining minimum heatsink requirement for thermal management.
VR leakage 1 µA at 650 V, 25 °C - Ultra-low reverse leakage preserves efficiency in high-impedance hold-up circuits and battery-isolated systems.

Pinout & Package

D2PAK R2P (SOT8018) surface-mount plastic package with real-2-pin configuration: anode and cathode terminals only; mounting base (mb) is internally connected to cathode and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
1 K (cathode) Main current exit terminal; electrically tied to mounting base for low-inductance, low-thermal-resistance PCB layout.
2 A (anode) Main current entry terminal; isolated from mounting base to enable floating anode configurations in bridge legs.
mb Mounting base Thermally conductive copper slug connected to cathode; requires soldered thermal pad on PCB for Rth(j-c) compliance.

Key Features

Feature Design Value
Zero forward & reverse recovery Eliminates Qrr-related switching loss and di/dt-induced voltage overshoot, enabling hard-switched topologies without snubbers.
Temperature-independent QC Capacitive charge remains stable from –55 °C to 175 °C, ensuring predictable turn-off timing and EMI profile across ambient extremes.
High IFSM (65 A) Withstands 10 ms half-sine surge at 150 °C case temperature-supports robustness in UPS and PV inverter anti-islanding fault events.
Low QC × VF FoM Optimized trade-off between conduction and switching loss; benchmark value for 650 V SiC Schottky diodes in high-frequency power supplies.
Reduced system EMI No reverse recovery dv/dt spikes; measured diode capacitance (61 pF at 400 V) enables clean, predictable LC filter design.

Applications

Server Power Supply Photovoltaic Inverter

Use Scenario: Output rectification in 3.3 kW, 96% efficient 48 V intermediate bus converter using interleaved LLC topology.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectifier stage; handles 16 A DC with <100 ns turn-off transition.

Use Value: Zero Qrr reduces MOSFET gate drive stress and eliminates need for active clamp circuitry, cutting BOM cost by $0.32/unit.

Use Scenario: DC-side anti-parallel diode in 10 kW string inverter H-bridge, operating at 16 kHz PWM with 150 °C max junction temperature.

IC Role / Device Role / Timing Role: Bidirectional conduction path during dead-time; sustains 650 V blocking while conducting 16 A forward current.

Use Value: Stable VF drift (<±0.1 V from 25 °C to 150 °C) ensures consistent current sharing across parallel strings without thermal runaway.

Telecom Rectifier Battery Charging Infrastructure

Use Scenario: Secondary-side rectification in -48 V telecom rectifier module with 94% peak efficiency and <15 mVpp output ripple.

IC Role / Device Role / Timing Role: High-frequency output diode in phase-shifted full-bridge; switches at 200 kHz with 34 nC QC.

Use Value: Low QC × VF minimizes turn-off loss contribution to total conduction loss, improving light-load efficiency by 1.8% at 10% load.

Use Scenario: Isolation-stage rectifier in 6.6 kW on-board EV charger (OBC), operating in discontinuous conduction mode (DCM) with 100 kHz switching.

IC Role / Device Role / Timing Role: Unidirectional current path in dual-active-bridge (DAB) secondary; withstands 650 V DC link with 16 A RMS current.

Use Value: 175 °C max junction rating allows compact heatsink design, reducing OBC volume by 12% versus 150 °C-rated alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
Wolfspeed C4D16065A Same 650 V/16 A rating but TO-247-2L package; higher Rth(j-c) (1.9 K/W); QC = 38 nC. Requires larger heatsink footprint; less suitable for space-constrained SMD layouts. Select when through-hole mounting and higher surge margin (IFSM = 80 A) are prioritized over board area.
ROHM SCT3160AL 650 V/16 A in TO-263AB (D2PAK); QC = 32 nC but VF = 1.75 V @ 150 °C (vs. 2.6 V for PSC1665JJ). Slightly lower conduction loss at high temperature; no integrated mounting base connection. Select when lowest possible VF at elevated Tj is critical and discrete thermal pad routing is acceptable.

Compared with C4D16065A and SCT3160AL, PSC1665JJ uniquely integrates cathode-to-mounting-base connectivity in D2PAK R2P, delivering lowest thermal resistance (1.3 K/W min) and highest surge robustness (65 A @ 150 °C) in a surface-mount form factor optimized for automated assembly.

Availability

PSC1665JJ is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for PSC1665JJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

The PSC1665JJ belongs to Nexperia's high-voltage SiC Schottky diode product line, designed specifically for next-generation power conversion systems demanding zero-recovery performance, high-temperature reliability, and surface-mount manufacturability.

FAQ

What is the maximum allowable case temperature for continuous operation?

The PSC1665JJ supports continuous forward current of 16 A at case temperature (Tc) ≤ 120 °C, as defined in the Quick Reference Data table. Exceeding this limit requires derating per Fig. 3 in the datasheet, where IF drops to 12 A at Tc = 135 °C under 0.5 duty cycle conditions.

Is the mounting base electrically isolated from the cathode?

No-the mounting base (mb) is internally connected to pin 1 (cathode), as confirmed in Table 2 (Pinning information) and the simplified outline graphic. This direct connection provides low-inductance, low-thermal-resistance current and heat transfer to the PCB thermal pad.

Does this diode exhibit reverse recovery charge (Qrr)?

No-this is a true Schottky-based Merged PiN Schottky (MPS) diode with majority-carrier conduction. The datasheet explicitly states "zero forward and reverse recovery" and confirms Qrr = 0 in both General Description and Features sections; only capacitive charge (QC = 34 nC) is present.

Can PSC1665JJ replace silicon fast recovery diodes in existing designs?

Yes-with layout and gate-drive adjustments: its zero Qrr eliminates snubber requirements, but its lower VF and faster switching demand careful evaluation of MOSFET body diode commutation and PCB parasitic inductance to avoid voltage ringing. Thermal interface must also accommodate the D2PAK R2P mounting base connection.

PSC1665JJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
16A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 16 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
180 µA @ 650 V
Capacitance @ Vr, F:
475pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK R2P
Operating Temperature - Junction:
-55°C ~ 175°C

PSC1665JJ FAQ

1.How can I place an order for PSC1665JJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSC1665JJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSC1665JJ reliable?

The price and inventory of PSC1665JJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSC1665JJ is usually 5 days.

3.What payment methods are accepted for PSC1665JJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSC1665JJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSC1665JJ?

PSC1665JJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSC1665JJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSC1665JJ?

For technical support, including PSC1665JJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSC1665JJ requirements.

6.How does Aetrix verify that PSC1665JJ is sourced from the original manufacturer or authorized distributors?

All PSC1665JJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSC1665JJ meets industry standards.

7.What is the process for return or replacement of PSC1665JJ?

All PSC1665JJ units undergo pre-shipment inspection (PSI). If there is an issue with PSC1665JJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSC1665JJ part is unused and in its original packaging.

Return procedure for PSC1665JJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSC1665JJ Tags

  • PSC1665JJ
  • PSC1665JJ PDF
  • PSC1665JJ Datasheet
  • PSC1665JJ Specifications
  • PSC1665JJ Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PSC1665JJ
  • Buy PSC1665JJ
  • PSC1665JJ Price
  • PSC1665JJ Distributor
  • PSC1665JJ Supplier
  • PSC1665JJ Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER