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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Nexperia USA Inc. PSC2065JJ

Name: PSC2065JJ
Brand: Nexperia USA Inc.
SKU: PSC2065JJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSC2065JJ

Manufacturer:: Nexperia USA Inc.

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), Variant

Datasheet:: PSC2065JJ.pdf

Description:: SIC DIODES AND FETS

Quantity:: RFQ Add To RFQ list

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Inventory:6,012

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Product details

Overview

PSC2065JJ from Nexperia is a 650 V, 20 A Silicon Carbide Schottky diode in D2PAK R2P (SOT8018) package, engineered for high-efficiency power conversion with zero reverse recovery, temperature-independent switching, and low Q_C × V_F figure-of-merit. It serves as a freewheeling or output rectifier in high-frequency SMPS and photovoltaic inverters operating up to 175 °C junction temperature.

For engineers reviewing the PSC2065JJ datasheet, PSC2065JJ pinout, PSC2065JJ application, or PSC2065JJ equivalent, key selection criteria include its 650 V DC blocking voltage, 41 nC capacitive charge at 400 V, 1.5–2.6 V forward voltage across 25–150 °C, 780 A non-repetitive surge rating, and thermal resistance of 1.2 K/W (junction-to-case).

Technical Context

This Merged PiN Schottky (MPS) SiC diode eliminates reverse recovery losses by combining Schottky anode with PiN cathode structure, enabling hard-switched operation at >100 kHz without snubbers. Its dv/dt ruggedness of 100 V/ns supports reliable turn-off under fast voltage transients in bridge-leg configurations.

The device delivers stable forward voltage and leakage current over -55 °C to 175 °C, with reverse leakage remaining below 1250 µA at 650 V and 150 °C. Its 680 pF capacitance at 1 V reverse bias enables predictable EMI behavior in high-dV/dt gate-drive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Maximum repetitive reverse voltage; defines safe blocking capability in 400–600 V bus applications.
I_F	20 A continuous - Rated forward current at T_c ≤ 111 °C; supports 98 W power dissipation with proper heatsinking.
Q_C	41 nC - Total capacitive charge at VR = 400 V; directly determines turn-off energy loss in hard-switched converters.
V_F	1.5–2.6 V - Forward voltage range at I_F = 20 A; low conduction loss across full industrial temperature range.
R_th(j-c)	1.2–1.5 K/W - Junction-to-case thermal resistance; enables compact thermal design with direct PCB copper pad mounting.
I_FSM	780 A - Non-repetitive peak forward surge (10 µs square wave); withstands inrush and fault currents without failure.

Pinout & Package

D2PAK R2P (SOT8018) surface-mount plastic package with real-2-pin configuration: anode and cathode terminals only; mounting base electrically connected to cathode for low-inductance thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	K (cathode)	Main current exit terminal; tied to mounting base for integrated thermal and electrical return path.
2	A (anode)	Main current entry terminal; isolated from mounting base to enable floating anode topologies.
mb	Mounting base	Exposed copper pad on underside; electrically and thermally connected to cathode (Pin 1), requiring dedicated PCB thermal pad.

Key Features

Feature	Design Value
Zero reverse recovery	Eliminates reverse recovery current and associated switching losses, enabling higher frequency operation without snubber circuits.
Temperature-independent switching	Capacitive turn-off behavior remains stable from -55 °C to 175 °C, ensuring consistent timing and loss profile across thermal cycles.
High I_FSM robustness	780 A surge rating (10 µs) provides margin against line transients and startup inrush in server and telecom power supplies.
Low Q_C × V_F	41 nC × ~1.8 V ≈ 74 nJ figure-of-merit - benchmark efficiency metric for SiC diodes in high-power-density designs.

Applications

Photovoltaic Inverters

Server Power Supplies

Use Scenario: DC-side boost stage and AC-side H-bridge output rectification in string inverters operating at 1000 V DC input.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectification and unidirectional energy transfer paths.

Use Value: Zero recovery enables >50 kHz switching with <1% conduction + switching loss penalty versus Si counterparts.

Use Scenario: Output rectification in 48 V–12 V intermediate bus converters delivering >1000 W in 1U rack servers.

IC Role / Device Role / Timing Role: High-current output diode in phase-shifted full-bridge topology with tight thermal constraints.

Use Value: 1.2 K/W R_th(j-c) allows direct mounting to cold plate, reducing system thermal resistance by 35% vs. TO-247 Si diodes.

Telecom Rectifiers

Battery Charging Infrastructure

Use Scenario: Front-end AC-DC PFC and isolated DC-DC stages in 3 kW telecom rectifier modules compliant with NEBS Level 3.

IC Role / Device Role / Timing Role: Boost diode in continuous conduction mode (CCM) PFC with 100 kHz switching.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during rapid bus transients in multi-module parallel systems.

Use Scenario: Onboard charger (OBC) and DC fast charging (DCFC) module rectification in EV charging stations rated ≥15 kW.

IC Role / Device Role / Timing Role: Primary-side clamp and secondary-side output diode in dual-active-bridge (DAB) isolation stages.

Use Value: 175 °C max junction temperature supports operation in sealed, fanless enclosures without derating at ambient >70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C4D20120A	Same 650 V/20 A rating but TO-247-2L package; higher R_th(j-c) (1.7 K/W); 38 nC Q_C.	Requires larger heatsink footprint; better suited for discrete heatsink mounting vs. direct PCB thermal pads.	Select when mechanical mounting flexibility outweighs PCB space constraints and thermal pad integration.
ROHM SCT2065KE	650 V/20 A in TO-263AB (D2PAK); 45 nC Q_C; V_F = 1.7 V @ 20 A, 25 °C; lower I_FSM (600 A).	Slightly higher conduction loss and lower surge margin; identical SMT footprint and thermal interface.	Select when cost sensitivity dominates and 600 A surge margin meets system fault requirements.

Compared with C4D20120A and SCT2065KE, PSC2065JJ offers the lowest thermal resistance among SMT-packaged 20 A SiC diodes and best-in-class Q_C × V_F, making it optimal for ultra-compact, high-power-density designs where PCB thermal management is prioritized.

Availability

PSC2065JJ is available at Aetrix Electronics and suitable for photovoltaic inverters, server power supplies, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for PSC2065JJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard logic, analog, and discrete components, serving automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.

PSC2065JJ belongs to Nexperia's high-voltage SiC Schottky diode product line, designed specifically for next-generation power conversion systems demanding zero-recovery performance, high-temperature operation, and high power density in surface-mount form factors.

FAQ

What is the maximum allowable case temperature for continuous operation?

The PSC2065JJ is rated for continuous forward current of 20 A at case temperature (T_c) ≤ 111 °C, as defined in the limiting values table. Exceeding this temperature requires proportional current derating per Figure 3 in the datasheet, with full derating to zero at T_c = 175 °C.

Is the mounting base electrically isolated from the anode?

No - the mounting base (mb) is internally connected to the cathode (Pin 1), not the anode (Pin 2). This configuration requires the PCB thermal pad to be routed to the cathode net, and the anode must remain electrically isolated from the heatsink or chassis ground.

How does the diode behave under high dv/dt conditions?

The PSC2065JJ exhibits 100 V/ns dv/dt ruggedness per IEC 60134, verified under 0 V ≤ V_R ≤ 480 V. Its MPS structure suppresses parasitic turn-on, enabling reliable operation in high-speed half-bridge and full-bridge topologies without gate resistors or active clamping.

Can this diode replace silicon diodes in existing designs without layout changes?

Yes - the D2PAK R2P (SOT8018) footprint matches legacy D2PAK-2L layouts, and the real-2-pin configuration simplifies routing. However, due to lower V_F and zero recovery, gate drive timing and snubber networks may require adjustment to avoid shoot-through or overvoltage.

PSC2065JJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), Variant

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 20A

Voltage - Forward (Vf) (Max) @ If:: 1.8 V @ 20 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 180 µA @ 650 V

Capacitance @ Vr, F:: 680pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK R2P

Operating Temperature - Junction:: -55°C ~ 175°C

PSC2065JJ FAQ

1.How can I place an order for PSC2065JJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSC2065JJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSC2065JJ reliable?

The price and inventory of PSC2065JJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSC2065JJ is usually 5 days.

3.What payment methods are accepted for PSC2065JJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSC2065JJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSC2065JJ?

PSC2065JJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSC2065JJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSC2065JJ?

For technical support, including PSC2065JJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSC2065JJ requirements.

6.How does Aetrix verify that PSC2065JJ is sourced from the original manufacturer or authorized distributors?

All PSC2065JJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSC2065JJ meets industry standards.

7.What is the process for return or replacement of PSC2065JJ?

All PSC2065JJ units undergo pre-shipment inspection (PSI). If there is an issue with PSC2065JJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSC2065JJ part is unused and in its original packaging.

Return procedure for PSC2065JJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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