Taiwan Semiconductor Corporation PU1DM

Overview

PU1DM from Taiwan Semiconductor is a 1A, 200V ultra-fast surface-mount rectifier diode in Micro SMA package, featuring 25 ns reverse recovery time, 0.90 V forward voltage at 1.0 A/25°C, and 28 A surge current capability - used in DC-DC converters and switching-mode inverters.

For engineers reviewing the PU1DM datasheet, PU1DM pinout, PU1DM application, or PU1DM equivalent, key selection criteria include repetitive peak reverse voltage (200 V), thermal resistance (R_θJL = 28 °C/W), junction temperature range (–55 to +175 °C), and low reverse leakage (≤15 µA at 125 °C).

Technical Context

The PU1DM employs planar silicon technology optimized for high-speed switching, with a single-die configuration and cathode-band polarity marking. Its ultra-fast recovery (trr ≤ 25 ns) and low Qrr (40 nC) minimize switching losses in high-frequency power conversion stages.

Thermal performance is characterized on a 5 mm × 5 mm Cu pad PCB: R_θJA = 60 °C/W, R_θJC = 34 °C/W, enabling reliable operation up to 175 °C junction temperature under sustained 1 A DC load.

Key Specifications

Pinout & Package

Package: Micro SMA - surface-mount plastic case (UL 94V-0), matte tin-plated leads, polarity indicated by cathode band, weight ≈ 0.006 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH1R02 and ES1D, the PU1DM delivers superior high-frequency performance (24–25 ns trr) and thermal efficiency (R_θJL = 28 °C/W), making it optimal for compact, high-efficiency DC-DC and inverter freewheeling where thermal headroom and EMI control are critical.

Availability

PU1DM is available at Aetrix Electronics and suitable for DC-DC converter output rectification, switching mode inverter freewheeling, and high-frequency flyback snubberless design requiring stable component supply and consistent parametric performance across production lots.

Supply support for PU1DM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and computing markets.

The PU1DM belongs to TSC's PU1xM ultra-fast rectifier family, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained surface-mount applications where thermal reliability and low Q_rr are essential.

FAQ

What is the maximum junction temperature rating for PU1DM?

The PU1DM has a maximum junction temperature (T_JMAX) of +175 °C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet (Version B2103). This rating allows continuous operation in demanding thermal environments such as enclosed industrial power supplies and under-hood automotive modules. Derating curves confirm 1 A DC current is sustainable up to 125 °C ambient when mounted on a 5 mm × 5 mm Cu pad. The PU1DM maintains stable electrical parameters across its full –55 °C to +175 °C junction range.

Does PU1DM have a halogen-free and RoHS-compliant construction?

Yes, the PU1DM is both halogen-free per IEC 61249-2-21 and RoHS compliant, as explicitly stated in the Taiwan Semiconductor product documentation (Version B2103). Its molding compound meets UL 94V-0 flammability standards, and terminals are matte tin plated per J-STD-002 solderability requirements. These material specifications ensure compliance with global environmental directives and compatibility with lead-free reflow processes. The PU1DM carries no exemptions and satisfies full substance restrictions for commercial and industrial electronics.

What is the reverse recovery time (t_rr) specification for PU1DM?

The PU1DM reverse recovery time is specified as ≤25 ns under test conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, with a typical value of 24 ns. An alternate condition (I_F = 1.0 A, di/dt = 50 A/µs, V_R = 30 V) yields ≤36 ns. This ultra-fast t_rr is critical for minimizing switching loss and voltage overshoot in high-frequency DC-DC and inverter applications. The PU1DM's t_rr performance is consistently validated across production lots per Version B2103 test data.

Is PU1DM suitable for use in automotive under-hood applications?

Yes, the PU1DM is suitable for automotive under-hood applications due to its –55 °C to +175 °C junction temperature range, robust thermal resistance (R_θJL = 28 °C/W), and qualification to JESD201 Class 2 whisker resistance. Its low reverse leakage (≤15 µA at 125 °C) and stable V_F behavior across temperature support reliable operation in engine control units and HVAC blower modules. However, Taiwan Semiconductor explicitly states these devices are not designed for medical or life-sustaining systems - the PU1DM is intended for industrial and automotive non-safety-critical power conversion.

What does the marking code 'P6' indicate on PU1DM devices?

'P6' is the device-specific marking code laser-etched on the PU1DM package surface, uniquely identifying it as the 200 V variant within the PU1xM family (PU1BM = P5, PU1DM = P6). This marking is defined in the Absolute Maximum Ratings table of the Taiwan Semiconductor datasheet (Version B2103) and serves as the primary visual identifier for voltage grade verification during incoming inspection and assembly. The 'P6' mark appears adjacent to the cathode band and remains legible after standard reflow and cleaning processes. Each PU1DM unit bears this exact marking code.