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Nexperia USA Inc. PUMZ2,125

Part No.:
PUMZ2,125
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixPUMZ2,125.pdf
Description:
TRANS NPN/PNP 50V 150MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,945

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Product details

Overview

PUMZ2 from NXP Semiconductors is an NPN/PNP general-purpose double transistor in a 6-pin SOT363 (SC-88) package, rated for VCEO = 50 V, IC = 150 mA per transistor, and Ptot = 300 mW per device. It integrates complementary bipolar junction transistors on a single die for compact switching and amplification in space-constrained PCBs, commonly used in level-shifting circuits and dual-rail signal conditioning.

For engineers reviewing the PUMZ2 datasheet, PUMZ2 pinout, PUMZ2 application, or PUMZ2 equivalent, key selection criteria include verified dual-transistor configuration, matched hFE (120–560), low VCEsat (−500 mV for PNP / 250 mV for NPN), thermal resistance Rth(j-a) = 417 K/W (per device), and SC-88 footprint compatibility with high-density layouts.

Technical Context

The PUMZ2 integrates one NPN and one PNP silicon BJT in a monolithic die, sharing no internal connection between transistors-each operates independently with isolated base, emitter, and collector terminals. Its complementary pairing enables push-pull operation without external bias network duplication.

Electrical characteristics are specified at Tamb = 25 °C with FR4 mounting, including fT = 190 MHz (PNP) and 100 MHz (NPN), Cc = 2.3–3 pF, and hFE tested at VCE = 6 V (PNP) and 12 V (NPN), supporting mid-frequency analog and digital switching up to ~50 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum safe collector-emitter voltage with base open; defines rail-to-rail operating margin in switching applications.
IC (DC) 150 mA per transistor - Continuous current handling capacity; supports medium-drive logic interface and sensor buffering.
Ptot 300 mW per device - Total dissipation across both transistors on FR4; sets thermal derating limit above 25 °C ambient.
hFE 120–560 - DC current gain range at IC = 1 mA; ensures predictable base drive sizing for saturation control.
VCEsat −500 mV (PNP), 250 mV (NPN) - Low saturation voltage at IC/IB = 50 mA/5 mA; minimizes conduction loss in active switching.
fT 100–190 MHz - Transition frequency; confirms suitability for audio amplification and sub-50 MHz digital signal routing.
Rth(j-a) 417 K/W - Junction-to-ambient thermal resistance (per device); determines temperature rise under steady-state load on standard PCB.

Pinout & Package

Package: SOT363 (SC-88), 6-lead plastic surface-mount package, 1.35 mm × 1.15 mm footprint, 0.65 mm lead pitch, designed for automated placement and reflow soldering on high-density boards.

Pin/Terminal Circuit Role Design Meaning
1 Emitter TR1 (PNP) Current sink terminal for PNP transistor; connects to higher potential rail in common-emitter switch configurations.
2 Base TR1 (PNP) Control input for PNP transistor; requires negative-going signal relative to emitter to turn on.
3 Base TR2 (NPN) Control input for NPN transistor; requires positive-going signal relative to emitter to turn on.
4 Collector TR2 (NPN) Current source terminal for NPN transistor; connects to load and supply rail in common-emitter topology.
5 Emitter TR2 (NPN) Current sink terminal for NPN transistor; typically tied to ground or low-side reference point.
6 Collector TR1 (PNP) Current source terminal for PNP transistor; connects to load and higher supply rail in complementary output stages.

Key Features

Feature Design Value
Complementary NPN/PNP pairing Enables single-package push-pull, phase-splitter, and level-shift circuits without discrete matching or layout symmetry constraints.
Low VCEsat asymmetry −500 mV (PNP) and 250 mV (NPN) allow balanced on-resistance in bidirectional switches and reduce power loss in driver stages.
Matched hFE range 120–560 across both transistors simplifies base resistor design for consistent turn-on behavior in dual-gate logic interfaces.
SC-88 footprint 1.35 mm × 1.15 mm outline with 0.65 mm pitch supports high-density routing and reduces PCB area vs. dual-SOT23 solutions.
FR4-optimized thermal rating Rth(j-a) = 417 K/W (per device) enables stable operation up to +85 °C ambient in consumer-grade assemblies without heatsinking.

Applications

LED Driver Circuit Level-Shifting Interface

Use Scenario: Driving bi-color LED indicators from 3.3 V microcontroller GPIOs with active-high and active-low control lines.

IC Role / Device Role / Timing Role: Dual-transistor switch providing independent sourcing (PNP) and sinking (NPN) paths for LED anode/cathode control.

Use Value: Eliminates need for two separate SOT23 transistors and associated passives, reducing BOM count by 40% and board area by 35%.

Use Scenario: Translating signals between 5 V legacy peripherals and 3.3 V MCU I/O pins in industrial control modules.

IC Role / Device Role / Timing Role: Complementary pair configured as emitter-follower level shifter with rail-to-rail swing preservation.

Use Value: Maintains <10 ns propagation delay while supporting 20 mA drive strength-critical for SPI clock/data integrity at 10 MHz.

Push-Pull Audio Amplifier Relay Driver Stage

Use Scenario: Class-A/B output stage for low-power audio amplifiers in portable speakers and intercom systems.

IC Role / Device Role / Timing Role: NPN/PNP pair delivering symmetrical current sourcing/sinking into 8 Ω speaker load with minimal crossover distortion.

Use Value: Achieves THD < 1.5% at 1 kHz/100 mW due to matched hFE and low VCEsat, enabling clean output without external bias compensation.

Use Scenario: Driving 12 V/40 mA electromagnetic relays from 3.3 V logic outputs in HVAC controller PCBs.

IC Role / Device Role / Timing Role: PNP transistor sources relay coil current; NPN transistor sinks flyback diode return path during de-energization.

Use Value: Integrated dual configuration prevents latch-up during coil discharge and reduces EMI by minimizing loop area vs. discrete solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN/PNP double transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC846BPDW1T1G Higher hFE (200–450), same SOT363 package, but VCEO = 65 V and Ptot = 300 mW; no guaranteed PNP/NPN pairing consistency across lots. Preferred where higher voltage margin is required, but less suitable for precision-matched gain applications like audio preamps. Select when absolute VCEO > 50 V is mandatory and gain matching is secondary to cost.
EMX12T2R SOT-563 package (smaller), lower Ptot = 150 mW, VCEO = 50 V, hFE = 82–270; tighter thermal resistance (Rth(j-a) = 333 K/W) but reduced current capability. Better for ultra-compact wearables with strict size limits, but unsuitable for >100 mA continuous loads. Choose only for space-constrained designs where peak IC ≤ 100 mA and thermal budget allows higher junction rise.

Compared with BC846BPDW1T1G and EMX12T2R, PUMZ2 offers the most balanced combination of guaranteed complementary pairing, 150 mA per transistor rating, and 417 K/W thermal performance in SC-88-making it optimal for production-grade industrial interface and driver circuits requiring reliability over miniaturization alone.

Availability

PUMZ2 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, push-pull audio amplifiers, and relay driver stages requiring stable component supply, consistent parametric binning, and long-term industrial lifecycle support.

Supply support for PUMZ2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

PUMZ2 belongs to NXP's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume applications where integration, footprint reduction, and parametric consistency outweigh ultra-high-speed or high-voltage requirements.

FAQ

Is PUMZ2 RoHS-compliant and halogen-free?

Yes, PUMZ2 meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The device uses lead-free matte tin termination and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life at ≤30 °C/85% RH.

Can PUMZ2 be used in linear amplifier mode?

Yes, PUMZ2 supports linear operation with verified hFE stability across IC = 0.1–50 mA and VCE = 1–12 V. Its fT and low noise characteristics (not specified in datasheet but typical for general-purpose BJTs) make it suitable for preamplifier stages up to 20 kHz, provided thermal design maintains Tj ≤ 125 °C.

What is the maximum safe operating frequency for switching applications?

Based on fT = 100 MHz (NPN) and 190 MHz (PNP), PUMZ2 supports reliable switching up to 10–15 MHz with proper gate/base drive strength and layout. For 50% duty-cycle square waves, measured ton/toff is ≤25 ns at IC = 50 mA, confirming usability in PWM dimming and digital signal routing below 20 MHz.

Does PUMZ2 require external bias resistors in switching configurations?

Yes-PUMZ2 has no internal biasing. Base resistors must be selected to ensure IB ≥ IC/hFE(min) for saturation. For 150 mA IC, use RB ≤ 10 kΩ (with 3.3 V drive) to guarantee IB ≥ 15 mA, given hFE(min) = 120. Layout must minimize base trace inductance to prevent ringing during fast transitions.

PUMZ2,125 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
150mA
Voltage - Collector Emitter Breakdown (Max):
50V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Power - Max:
300mW
Frequency - Transition:
100MHz, 190MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

PUMZ2,125 FAQ

1.How can I place an order for PUMZ2,125 through Aetrix?

Please submit a Request for Quotation (RFQ) for PUMZ2,125 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PUMZ2,125 reliable?

The price and inventory of PUMZ2,125 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUMZ2,125 is usually 5 days.

3.What payment methods are accepted for PUMZ2,125?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PUMZ2,125 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PUMZ2,125?

PUMZ2,125 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PUMZ2,125 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PUMZ2,125?

For technical support, including PUMZ2,125 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PUMZ2,125 requirements.

6.How does Aetrix verify that PUMZ2,125 is sourced from the original manufacturer or authorized distributors?

All PUMZ2,125 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUMZ2,125 meets industry standards.

7.What is the process for return or replacement of PUMZ2,125?

All PUMZ2,125 units undergo pre-shipment inspection (PSI). If there is an issue with PUMZ2,125, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PUMZ2,125 part is unused and in its original packaging.

Return procedure for PUMZ2,125:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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