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Renesas R2A25110KSP#U50

Part No.:
R2A25110KSP#U50
Manufacturer:
Renesas
Category:
Gate Drivers
Package:
48-SSOP (0.240", 6.10mm Width)
Datasheet:
AetrixR2A25110KSP#U50.pdf
Description:
IC GATE DRVR HI/LOW SIDE 48SSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:236

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Product details

Overview

R2A25110KSP from Renesas Electronics is an intelligent power device for IGBT gate drive with integrated micro isolator, designed for high-voltage inverter systems. It provides isolated gate drive (2500 VRMS), active Miller clamp, soft turn-off, dual-channel emitter current sensing (0.25 V typ. OC threshold), and dual IGBT temperature monitoring - enabling robust protection in automotive EV/HEV main inverters.

For engineers reviewing the R2A25110KSP datasheet, R2A25110KSP pinout, R2A25110KSP application, or R2A25110KSP equivalent, this page delivers verified technical context, confirmed isolation specs, validated fault-handling behavior, and real-world design implications for IGBT parallel driving and thermal safety-critical systems.

Technical Context

The R2A25110KSP implements a coreless transformer-based micro isolator delivering 2500 VRMS isolation and >35 kV/μs common-mode rejection between MCU-side (primary) and IGBT-side (secondary) circuits. Its dual-domain architecture separates VCC1 (5 V MCU supply) and VCC2/PVCC2 (15 V IGBT-side supplies), with independent GND2/PGND2 references.

It integrates two independent gate drive outputs (OUTH and OUTL), each with ≤1.0 Ω output resistance, supporting parallel IGBT configurations. Protection logic includes dual-channel CS inputs for overcurrent detection, dual TEMP inputs with PWM-encoded thermal feedback via TEMPOUT, and configurable fault hold timing via FHT1 capacitor.

Key Specifications

ParameterValue and Actual Design Meaning
Isolation Voltage2500 VRMS (60 sec) - enables safe operation across 600–1200 V DC bus systems
Common-Mode Rejection>35 kV/μs - suppresses fast transients in high-dv/dt inverter switching environments
Gate Drive Output Resistance≤1.0 Ω - supports parallel IGBT driving with matched turn-on/turn-off characteristics
Overcurrent Detection Threshold0.25 V typ. (CS1/CS2) - sets precise emitter-shunt-based short-circuit trip point
IGBT Temperature SensingDual TEMP1/TEMP2 inputs with PWM output (TEMPOUT) - enables real-time chip-level thermal monitoring of two IGBTs
Fault Hold Time ControlAdjustable via external capacitor on FHT1 pin - allows system-level tuning of fault latching duration
Operating Junction Temp−40 °C to +150 °C - qualified for under-hood automotive inverter environments

Pinout & Package

Package: SSOP48 (0.5 mm pitch, 10.8 × 12.8 mm body size), thermally enhanced for high-power IGBT drive applications.

Pin/TerminalCircuit RoleDesign Meaning
INA / INBPrimary-side gate inputNon-inverted (INA) and inverted (INB) logic inputs - support flexible MCU interface with internal PU/PD biasing
FO / FO_BPrimary-side fault outputComplementary fault signals (H-active / L-active) - enable direct MCU interrupt or latch logic without level translation
CS1 / CS2Secondary-side current senseDual emitter-shunt voltage inputs - allow independent overcurrent detection for two parallel IGBTs
TEMP1 / TEMP2Secondary-side thermal senseDual IGBT junction temperature monitor inputs - feed constant-current-driven diode voltage to internal PWM encoder
OUTH / OUTLSecondary-side gate driveHigh-side and low-side gate drivers with ≤1.0 Ω output impedance - support discrete external gate resistors for slew rate control
CLAMPActive Miller clamp outputLow-impedance gate-to-PGND2 path during turn-off - prevents spurious IGBT turn-on via dv/dt coupling
SOFTSoft turn-off driverControlled discharge path for IGBT gate - mitigates voltage overshoot during fault-induced shutdown
VREGOn-chip 5 V regulator outputStable 5 V @ ≤5 mA - powers external temperature reference circuitry and stabilizes internal bias

Key Features

FeatureDesign Value
Micro Isolator with Coreless Transformer2500 VRMS isolation + >35 kV/μs CMR - eliminates optocoupler latency and aging while maintaining galvanic separation
Active Miller Clamp CircuitCLAMP pin drives gate directly to PGND2 at <1.0 Ω - superior noise immunity vs. passive resistor-based clamping
Configurable Overcurrent DetectionSEL pin enables/disables CS1/CS2 monitoring - allows runtime fault masking during transient startup or regen
Dual-Channel IGBT Thermal MonitoringTEMP1/TEMP2 inputs with PWM-encoded TEMPOUT - enables closed-loop thermal derating without ADC resources on MCU side
Adjustable Fault Hold TimingFHT1 pin accepts external capacitor - sets MCU-side fault latch duration independently from IGBT-side soft-turn-off timing

Applications

EV/HEV Main InverterIndustrial Motor Drive Inverter

Use Scenario: High-power traction inverter controlling dual-motor or dual-IGBT parallel configurations in battery electric vehicles.

IC Role / Device Role / Timing Role: Isolated gate driver with integrated protection - handles primary-side logic, secondary-side high-current switching, and real-time fault response across 600–800 V DC bus.

Use Value: Enables single-chip IGBT drive + protection for dual parallel IGBTs, reducing BOM count and PCB area versus discrete isolator + driver + protection solutions.

Use Scenario: Variable-frequency drive for HVAC compressors or industrial pumps requiring robust short-circuit immunity and thermal management.

IC Role / Device Role / Timing Role: Intelligent gate driver with active Miller clamp and soft turn-off - ensures reliable IGBT switching under load faults and ambient temperature extremes.

Use Value: Prevents destructive shoot-through and collector-emitter voltage spikes during overcurrent events via coordinated CLAMP + SOFT action.

EV/HEV Onboard Charger ConverterRenewable Energy Inverter

Use Scenario: Bidirectional AC/DC converter in vehicle onboard chargers, operating in both grid-tie and battery-charge modes.

IC Role / Device Role / Timing Role: Isolated gate driver with dual-channel current and temperature sensing - monitors IGBT health during high-frequency switching and thermal cycling.

Use Value: Dual CS1/CS2 and TEMP1/TEMP2 inputs allow per-IGBT diagnostics in interleaved or phase-shifted topologies, improving system reliability.

Use Scenario: Solar string or central inverter interfacing with PV arrays and grid, requiring high-voltage isolation and fault containment.

IC Role / Device Role / Timing Role: Fault-aware gate driver with UVLO on both VCC1 and VCC2 domains - maintains safe shutdown during grid sag or PV voltage collapse.

Use Value: Independent UVLO thresholds (4.1 V on VCC1, 10 V on VCC2) ensure fail-safe behavior across primary control and secondary power domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar intelligent IGBT gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si827x series (Silicon Labs)Capacitive isolation only; no integrated soft turn-off or temperature sensing; requires external protection ICsLacks on-chip IGBT protection logic - suitable for simpler systems where MCU handles fault decisionsChoose when isolation + basic gate drive suffices and protection is implemented externally
UCC21520 (Texas Instruments)Reinforced isolation (5 kVRMS); dual-channel; no integrated current/temp sensing or soft turn-offRequires external comparators, shunts, and thermal sensors - increases component count and layout complexityPrefer for high-isolation-demand applications where full integration is not required

Compared with Si827x and UCC21520, the R2A25110KSP uniquely combines micro-isolation, dual-channel protection sensing, and hardware-enforced soft turn-off in one SSOP48 package - reducing system-level design effort for automotive-grade IGBT inverters.

Availability

R2A25110KSP is available at Aetrix Electronics and suitable for automotive EV/HEV inverters, industrial motor drives, and renewable energy converters requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-aligned reliability.

Supply support for R2A25110KSP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The R2A25110KSP belongs to Renesas' Intelligent Power Device family, engineered specifically for high-reliability, high-isolation IGBT gate driving in electric vehicle traction systems and industrial inverters.

FAQ

What is the isolation rating and structure used in the R2A25110KSP?

The R2A25110KSP uses a coreless transformer-based micro isolator with 2500 VRMS isolation (60 sec) and >35 kV/μs common-mode rejection. This structure eliminates LED degradation and timing drift found in optocouplers, providing stable, high-speed signal transfer between MCU and IGBT domains. The R2A25110KSP achieves galvanic separation without optical components, enhancing long-term reliability in automotive applications.

How does the R2A25110KSP implement soft turn-off, and what external components are required?

The R2A25110KSP implements soft turn-off by driving the SOFT pin to discharge the IGBT gate gradually during fault conditions. An external resistor (RSOFT) must be connected between the SOFT pin and the IGBT gate to set the discharge rate and limit peak current. This prevents destructive voltage overshoot during abrupt shutdown. The R2A25110KSP's internal logic triggers SOFT automatically upon overcurrent, overtemperature, or UVLO detection - no MCU intervention needed.

Can the R2A25110KSP drive multiple IGBTs in parallel, and how is gate drive matching ensured?

Yes, the R2A25110KSP supports parallel IGBT driving via its ≤1.0 Ω gate drive output resistance on both OUTH and OUTL pins. Matching is ensured by identical internal drive strength and separate high-/low-side outputs, allowing symmetric external gate resistors (RGH/RGL). The R2A25110KSP also provides dual CS1/CS2 and TEMP1/TEMP2 inputs to monitor each IGBT individually - critical for balanced current sharing and thermal derating in parallel configurations.

What are the fault signaling mechanisms of the R2A25110KSP, and how is fault hold time configured?

The R2A25110KSP provides complementary fault outputs FO (active-high) and FO_B (active-low) on the MCU side, plus adjustable hold time via an external capacitor on the FHT1 pin. Faults include overcurrent, IGBT overtemperature, UVLO, timeout, and TSD. The R2A25110KSP holds the fault signal for a duration determined by CFHT1 (minimum 100 μs), ensuring MCU firmware has sufficient time to respond before automatic reset.

Does the R2A25110KSP include an on-chip voltage regulator, and what is its purpose?

Yes, the R2A25110KSP integrates a 5 V regulator outputting up to 5 mA from the VREG pin. It powers external circuitry such as temperature reference resistors (RTREF) and stabilizes internal bias networks. A 0.022 μF capacitor is mandatory on VREG for stability. The R2A25110KSP's VREG also feeds the SEL pin logic and TEMPVL threshold setting - making it essential for full protection functionality.

R2A25110KSP#U50 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-SSOP (0.240", 6.10mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
-
Driven Configuration:
High-Side or Low-Side
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
IGBT
Voltage - Supply:
4.5V, 12.5V
Logic Voltage - VIL, VIH:
1.65V, 3.85V
Current - Peak Output (Source, Sink):
10A, 10A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-SSOP

R2A25110KSP#U50 FAQ

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All R2A25110KSP#U50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2A25110KSP#U50 meets industry standards.

7.What is the process for return or replacement of R2A25110KSP#U50?

All R2A25110KSP#U50 units undergo pre-shipment inspection (PSI). If there is an issue with R2A25110KSP#U50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R2A25110KSP#U50 part is unused and in its original packaging.

Return procedure for R2A25110KSP#U50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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