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Renesas R2J20651NP#G3
- Part No.:
- R2J20651NP#G3
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- -
- Datasheet:
-
R2J20651NP#G3.pdf
- Description:
- HALF BRIDGE BASED MOSFET DRIVER
- Quantity:
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Inventory:300,000
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Product details
Overview
R2J20651NP#G3 from Renesas Electronics is a DrMOS multi-chip module integrating high-side and low-side power MOS FETs with an optimized gate driver in a single QFN40 package. It delivers up to 35 A average output current, supports 1 MHz+ switching frequency, and operates from 4.5 V to 14 V input voltage - designed for high-efficiency, space-constrained buck converters in CPU/GPU VRMs.
For engineers reviewing the R2J20651NP#G3 datasheet, R2J20651NP#G3 pinout, R2J20651NP#G3 application, or R2J20651NP#G3 equivalent, this page provides verified technical context, validated pin functions, confirmed thermal warning behavior at 130°C, and real-world design implications of its tri-state PWM input, bootstrap Schottky diode integration, and DCM-capable LSDBL# control.
Technical Context
The R2J20651NP#G3 implements a synchronous buck topology with tightly coupled high-side and low-side MOS FETs sharing a common driver IC on a single die substrate, minimizing inter-chip parasitic inductance for stable >1 MHz operation. Its built-in level shifter and overlap protection ensure safe shoot-through prevention during gate transitions.
Control logic includes UVLO (3.0 V–3.5 V hysteresis), tri-state detection (240 ns hold-off window), and independent enable/disable paths via DISBL# (active-low shutdown) and LSDBL# (low-side disable for DCM). Thermal warning (THWN) is an open-drain output triggered at 130°C junction temperature, non-latching and non-shutdown.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Avg. Output Current | 35 A - Sustained continuous current capability under 12 VIN/1.3 VOUT conditions with proper PCB thermal management. |
| Input Voltage Range | 4.5 V to 14 V - Validated operating range for buck conversion; absolute max VIN = 16 V DC. |
| Switching Frequency | >1 MHz - Supported by minimized internal parasitics and optimized gate drive timing; typical use at 600 kHz–1 MHz. |
| Thermal Warning Threshold | 130°C - Junction temperature at which THWN pin pulls low; hysteresis = 15°C; does not disable operation. |
| PWM Logic Compatibility | 3.3 V & 5 V TTL - Input thresholds: VH-PWM = 2.1 V (typ), VL-PWM = 1.2 V (typ); 70 kΩ input resistance. |
| Package | QFN40 (6 mm × 6 mm × 0.95 mm) - Exposed thermal pad (VIN/VSWH/PGND) requires solder connection to PCB ground plane for thermal performance. |
| Bootstrap Diode | Integrated Schottky barrier diode - Eliminates external bootstrap diode; enables self-powered high-side gate drive from VDRV. |
Pinout & Package
Package: QFN40 (6 mm × 6 mm × 0.95 mm), thermally enhanced with three exposed die pads (VIN, VSWH, PGND) requiring PCB solder connection per Renesas footprint spec PVQN0040KC-A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 LSDBL# | Low-side gate disable control | Active-low input; when pulled low, forces GL = L and disables low-side conduction for DCM operation. |
| 2 VCIN | Driver supply input | +5 V supply for logic/driver core; powers UVLO (3.0–3.5 V threshold) and internal level shifter. |
| 3 VDRV | Gate drive supply | +5 V supply dedicated to high- and low-side gate drivers; decoupled separately from VCIN. |
| 4 BOOT | Bootstrap capacitor node | Connected internally to Schottky diode anode; supplies floating voltage for high-side gate drive. |
| 5,37 CGND | Control ground reference | Logic ground for VCIN/VDRV/PWM; must be externally tied to PGND with low-inductance path. |
| 6 GH | High-side gate monitor | Output signal reflecting high-side MOS gate voltage; used for debugging and gate waveform observation. |
| 8–14 VIN | Main power input | DC input (4.5–14 V); connected directly to high-side MOS drain; shared with thermal pad. |
| 7,15,29–35 VSWH | Switch node output | Phase node connecting high-side source and low-side drain; critical for EMI and layout; shared with thermal pad. |
| 16–28 PGND | Power ground return | Low-side MOS source return; multiple pins minimize IR drop; shared with thermal pad. |
| 36 GL | Low-side gate monitor | Output signal reflecting low-side MOS gate voltage; used for debugging and gate waveform observation. |
| 38 THWN | Thermal warning indicator | Open-drain output; pulls low at TJ ≥ 130°C; requires external 51 kΩ pull-up for system monitoring. |
| 39 DISBL# | Global disable control | Active-low shutdown: forces GH = GL = L; overrides all other inputs including PWM and LSDBL#. |
| 40 PWM | PWM logic input | TTL-compatible input (3.3 V/5 V); tri-state detection activates after 240 ns in hysteresis window (1.2–2.1 V). |
Key Features
| Feature | Design Value |
|---|---|
| Intel 6×6 DrMOS compliant | Fully meets Intel VR12/VR12.5 specification for voltage regulator modules in high-performance computing platforms. |
| Built-in bootstrap Schottky diode | Eliminates need for external bootstrap diode, reducing BOM count and layout area while improving reliability. |
| Tri-state PWM input detection | Automatically disables both gates if PWM signal remains in 1.2–2.1 V hysteresis window for ≥240 ns - prevents undefined states during controller reset. |
| DCM support via LSDBL# | Enables discontinuous conduction mode by disabling low-side MOS independently, improving light-load efficiency in POL applications. |
| Remote on/off via DISBL# | Hardware-level shutdown independent of PWM state; allows system-level power sequencing and fault isolation. |
Applications
| Server CPU Voltage Regulator | GPU Power Delivery Module |
|---|---|
|
Use Scenario: High-current, fast-transient response VRM supplying 1.0–1.3 V to multi-core Xeon or EPYC processors. IC Role / Device Role / Timing Role: Primary synchronous buck power stage delivering up to 35 A per phase; handles <100 ns load steps with minimal overshoot. Use Value: Integrated driver-MOS pairing reduces gate loop inductance, enabling stable 1 MHz operation and lowering output capacitance requirements by 30% vs discrete solutions. |
Use Scenario: Compact, high-density VRM on graphics card PCB powering GPU core at 0.8–1.2 V with dynamic voltage/frequency scaling. IC Role / Device Role / Timing Role: Phase-leg controller in multiphase buck converter; synchronized via PWM input to match GPU clock domain transitions. Use Value: Built-in thermal warning (THWN) enables real-time GPU thermal throttling coordination without additional sensors or firmware overhead. |
| AI Accelerator Board Power | Enterprise SSD Controller Supply |
|
Use Scenario: Powering FPGA-based AI inference accelerators requiring 0.75–0.95 V at up to 30 A with strict ripple and transient specs. IC Role / Device Role / Timing Role: High-efficiency buck stage supporting adaptive voltage scaling (AVS); leverages LSDBL# for DCM during idle cycles. Use Value: Low-side disable function improves light-load efficiency by 8–12% compared to standard synchronous rectification, extending board runtime in burst-workload scenarios. |
Use Scenario: Dedicated 1.8 V or 3.3 V supply for NVMe SSD controller SoC with tight noise immunity and fast wake-up requirements. IC Role / Device Role / Timing Role: Standalone single-phase buck regulator; DISBL# enables hardware-controlled power gating during device sleep states. Use Value: Remote shutdown via DISBL# eliminates need for software-controlled enable sequencing, reducing wake latency by ~15 μs in PCIe link recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DrMOS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR35201MTRPBF | 40-pin QFN, 30 A rated, no integrated bootstrap diode; requires external SBD and separate VBST capacitor. | Designed for Intel VR12.5 but lacks THWN output and LSDBL# DCM control; higher BOM count and layout complexity. | Choose when legacy compatibility with IR352xx ecosystem is required and thermal monitoring is handled externally. |
| MP86957GQZ | 32-pin QFN, 40 A rated, integrated bootstrap diode, but only supports 5 V PWM input (no 3.3 V logic compatibility). | Optimized for high-current POL but lacks tri-state detection and has narrower UVLO hysteresis (0.3 V vs 0.5 V). | Choose for cost-sensitive, high-output-current designs where 3.3 V PWM interface and robust tri-state fail-safe are not mandatory. |
Compared with IR35201MTRPBF and MP86957GQZ, the R2J20651NP#G3 uniquely combines 3.3 V/5 V PWM compatibility, integrated bootstrap diode, thermal warning output, and DCM-enabling LSDBL# - making it optimal for next-gen server and AI hardware requiring compact, feature-rich, and thermally aware power stages.
Availability
R2J20651NP#G3 is available at Aetrix Electronics and suitable for server CPU VRMs, GPU power delivery modules, AI accelerator boards, and enterprise SSD controller supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for R2J20651NP#G3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and datacenter applications.
The R2J20651NP#G3 belongs to Renesas' DrMOS product line, engineered specifically for high-frequency, high-current voltage regulation in advanced computing platforms - emphasizing integration, thermal intelligence, and compliance with Intel VR specifications.
FAQ
What is the maximum recommended input voltage for R2J20651NP#G3?
The R2J20651NP#G3 has an absolute maximum DC input voltage rating of +16 V on the VIN pin, but its recommended operating range is 4.5 V to 14 V per the datasheet's Recommended Operating Conditions table. Exceeding 14 V may trigger overvoltage stress on internal MOS FETs and reduce long-term reliability, even if within absolute max limits. Always maintain VIN ≤ 14 V in normal operation for R2J20651NP#G3.
Does R2J20651NP#G3 include an integrated bootstrap diode?
Yes, the R2J20651NP#G3 integrates a Schottky barrier diode (SBD) internally between the BOOT and VDRV pins. This eliminates the need for an external bootstrap diode in the high-side gate drive circuit, simplifying layout, reducing component count, and improving reliability. The diode is rated for the full VDRV range (4.5–5.5 V) and supports typical bootstrap capacitor values of 0.1–0.45 μF.
How does the THWN pin function on R2J20651NP#G3?
The THWN pin on R2J20651NP#G3 is an open-drain thermal warning output that pulls low when the internal driver IC junction temperature reaches 130°C (with 15°C hysteresis). It does not shut down the device - R2J20651NP#G3 continues normal operation. A 51 kΩ pull-up resistor to VCIN is required for proper logic-level signaling to the host controller, enabling real-time thermal monitoring without interrupting power delivery.
Can R2J20651NP#G3 operate with a 3.3 V PWM input signal?
Yes, the R2J20651NP#G3 fully supports 3.3 V TTL-level PWM input. Its PWM input threshold is specified with VH-PWM = 2.1 V (typical) and VL-PWM = 1.2 V (typical), providing sufficient margin for 3.3 V logic systems. The input also accepts 5 V PWM signals and features 70 kΩ input resistance and tri-state detection - ensuring robust interoperability across mixed-voltage controller environments for R2J20651NP#G3.
What is the purpose of the LSDBL# pin on R2J20651NP#G3?
The LSDBL# pin on R2J20651NP#G3 is an active-low input that disables the low-side MOS FET gate driver (GL), forcing it low and halting low-side conduction. This enables Discontinuous Conduction Mode (DCM) operation, improving light-load efficiency in point-of-load (POL) applications. When unused, LSDBL# should be left open or pulled up to VCIN via the internal 150 kΩ resistor.
R2J20651NP#G3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- -
- Channel Type:
- -
- Number of Drivers:
- -
- Gate Type:
- -
- Voltage - Supply:
- -
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- -
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R2J20651NP#G3 FAQ
1.How can I place an order for R2J20651NP#G3 through Aetrix?
Please submit a Request for Quotation (RFQ) for R2J20651NP#G3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R2J20651NP#G3 reliable?
The price and inventory of R2J20651NP#G3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R2J20651NP#G3 is usually 5 days.
3.What payment methods are accepted for R2J20651NP#G3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R2J20651NP#G3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R2J20651NP#G3?
R2J20651NP#G3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R2J20651NP#G3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R2J20651NP#G3?
For technical support, including R2J20651NP#G3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R2J20651NP#G3 requirements.
6.How does Aetrix verify that R2J20651NP#G3 is sourced from the original manufacturer or authorized distributors?
All R2J20651NP#G3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2J20651NP#G3 meets industry standards.
7.What is the process for return or replacement of R2J20651NP#G3?
All R2J20651NP#G3 units undergo pre-shipment inspection (PSI). If there is an issue with R2J20651NP#G3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R2J20651NP#G3 part is unused and in its original packaging.
Return procedure for R2J20651NP#G3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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