Renesas R2J20652ANP#G3
- Part No.:
- R2J20652ANP#G3
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- -
- Datasheet:
-
R2J20652ANP#G3.pdf
- Description:
- HALF BRIDGE BASED MOSFET DRIVER
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Product details
Overview
R2J20652ANP#G3 from Renesas Electronics is a DrMOS multi-chip module integrating high-side and low-side MOS FETs with an optimized gate driver in a single QFN40 package. It delivers up to 35 A average output current, supports VIN up to 22 V, operates at switching frequencies above 1 MHz, and incorporates a built-in 5 V regulator and bootstrap switch - designed for high-efficiency synchronous buck converters in CPU/GPU VRMs.
For engineers reviewing the R2J20652ANP#G3 datasheet, R2J20652ANP#G3 pinout, R2J20652ANP#G3 application, or R2J20652ANP#G3 equivalent, this page provides verified technical context, Intel 6×6 DrMOS-compliant pin mapping, CCM/DCM operation support via LSDBL#, tri-state PWM input behavior, and validated alternatives for notebook/desktop/server VRM designs.
Technical Context
The R2J20652ANP#G3 implements a tightly integrated DrMOS architecture where high-side and low-side MOS FETs share minimal parasitic inductance with the driver die, enabling stable >1 MHz operation and reduced ringing. Its UVLO thresholds (VH = 7.4 V, VL = 7.0 V) and tri-state detection window (1.2–3.4 V, 100 ns hold-off) ensure robust PWM signal integrity under transient conditions.
It features dual control paths: VCIN powers the internal 5 V regulator (Vreg = 5.2 V ±25 mV) and enables driver activation, while DISBL# independently disables gate outputs without shutting down regulation. LSDBL# asserts low-side disable for DCM operation, and BOOT is internally switched - eliminating external Schottky diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Average Output Current | 35 A max - supports high-current CPU core rails in desktop/server platforms |
| Input Voltage Range (VIN) | 4.5 V to 22 V - compatible with 12 V and 19 V input systems for desktop and notebook VRMs |
| Switching Frequency | >1 MHz - enables compact magnetics and improved transient response in modern VRMs |
| VCIN Operating Range | 4.5–5.5 V or 8–22 V - flexible biasing; 4.5–5.5 V mode requires connection to Reg5V |
| Reg5V Output | 4.95–5.45 V @ 0–10 mA - powers external logic and internal circuitry with ±10 mV line/load regulation |
| UVLO Thresholds | VH = 7.4 V, VL = 7.0 V (0.4 V hysteresis) - prevents erratic startup/shutdown during input droop |
| PWM Input Logic | TTL-level with 1.2 V/3.4 V thresholds and 100 ns tri-state detection - tolerates high-impedance controller interfaces |
| Package | QFN40 (6 mm × 6 mm × 0.95 mm) - Intel 6×6 DrMOS-compliant footprint with exposed thermal pads |
Pinout & Package
Package: QFN40 (6 mm × 6 mm × 0.95 mm), Pb-free/Halogen-free, with three exposed thermal pads (High-side MOS Pad, Low-side MOS Pad, Driver Pad) requiring PCB soldering per datasheet note.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| LSDBL# (1) | Low-side gate disable control | Assert low to force GL = L for DCM operation; internally pulled up to Reg5V (150 kΩ) |
| VCIN (3) | Driver supply input | Enables internal 5 V regulator and UVLO; must be ≥7.4 V to activate driver state |
| BOOT (4) | Bootstrap voltage node | Internally switched +5 V source for high-side gate drive - no external SBD required |
| CGND (5, 37) | Control ground reference | Must be externally connected to PGND; serves as reference for VCIN, PWM, DISBL#, LSDBL# |
| GH (6) | High-side gate output | Drives high-side MOS FET gate; monitored output for gate waveform analysis |
| VIN (8–14, Pad) | Main power input | Connects to drain of high-side MOS FET; rated for DC ≤22 V, AC ≤30 V (100 ns) |
| VSWH (7, 15, 29–35, Pad) | Switch node / phase output | Connects to source of high-side and drain of low-side MOS FETs; critical for EMI and layout |
| PGND (16–28) | Power ground return | Low-inductance return path for both MOS FETs; multiple pins minimize ground bounce |
| GL (36) | Low-side gate output | Drives low-side MOS FET gate; monitored output for timing validation |
| Reg5V (38) | +5 V regulated output | Supplies external logic and internal circuits; requires ≥0.1 μF ceramic capacitor to CGND |
| DISBL# (39) | Global driver disable | Assert low to force GH = GL = L while keeping Reg5V active - supports remote on/off |
| PWM (40) | PWM logic input | TTL-compatible input controlling GH/GL states; enters tri-state if held in 1.2–3.4 V window for ≥100 ns |
Key Features
| Feature | Design Value |
|---|---|
| Intel 6×6 DrMOS pinout compliance | Ensures drop-in compatibility with industry-standard VRM controller layouts and PCB footprints |
| Built-in bootstrap switch | Eliminates external Schottky diode, reducing BOM count and improving reliability in high-frequency operation |
| Tri-state PWM input logic | Automatically disables both gates when PWM signal floats or resides in hysteresis window - prevents shoot-through |
| DCM support via LSDBL# | Enables discontinuous conduction mode for light-load efficiency improvement without controller modification |
| Integrated 5 V regulator with UVLO | Provides stable gate drive bias and system supervision; eliminates need for external LDO in most VRM designs |
| Low-side MOS FET with integrated SBD | Reduces conduction loss and ringing during body-diode commutation, improving efficiency and EMI performance |
Applications
| Desktop CPU VRM | Server GPU Power Stage |
|---|---|
|
Use Scenario: Primary 12 V input to 1.3 V core rail conversion for multi-phase x86 CPU power delivery. IC Role / Device Role / Timing Role: Integrated DrMOS power stage delivering synchronized high/low-side switching with <100 ns dead-time control. Use Value: Achieves >90% efficiency at 25 A/1.3 V with 1 MHz switching, reducing thermal load and enabling smaller heatsinks. |
Use Scenario: High-current, multi-phase 12 V-to-0.8 V conversion for AI accelerator GPUs in rack-mounted servers. IC Role / Device Role / Timing Role: Phase-leg module providing fast transient response and precise current sharing across parallel phases. Use Value: Supports >35 A per phase with minimal layout-induced timing skew, improving dynamic voltage accuracy under load steps. |
| Notebook SoC Core Rail | Embedded Computing PMIC Interface |
|
Use Scenario: 19 V adapter input converted to 1.1 V SoC core supply in thin-and-light notebooks. IC Role / Device Role / Timing Role: Compact DrMOS stage enabling high-density VRM design with integrated bootstrapping and regulation. Use Value: Reduces component count by 4+ parts (SBD, LDO, bootstrap cap, gate resistors) while maintaining 1.2 MHz operation. |
Use Scenario: Secondary power stage controlled by discrete PMIC (e.g., ISL95838) in industrial embedded controllers. IC Role / Device Role / Timing Role: Digitally controllable power block accepting TTL PWM and DISBL# signals for coordinated sequencing. Use Value: Enables precise power-up/down sequencing and fault isolation via DISBL# and LSDBL# pins without additional logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DrMOS power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR35203MTRPBF | Higher peak current (40 A), integrated current sense, but requires external bootstrap diode and 3.3 V logic interface | Targeted at enterprise server VRMs with telemetry requirements; lacks LSDBL#-enabled DCM mode | Choose for current-monitoring capability and higher peak current; avoid if DCM optimization or simplified BOM is critical |
| MP86957DQKT-Z | Lower RDS(on) high-side (2.8 mΩ), 5 V logic only, no integrated 5 V regulator - requires external bias supply | Optimized for ultra-thin notebook designs with strict height constraints; no UVLO or tri-state PWM support | Choose for lowest conduction loss in space-constrained 5 V-input systems; avoid if VCIN flexibility or robust PWM interface needed |
Compared with IR35203MTRPBF and MP86957DQKT-Z, the R2J20652ANP#G3 uniquely combines Intel 6×6 pinout, integrated 5 V regulator, bootstrap switch, and LSDBL#-enabled DCM - making it optimal for cost-sensitive, high-reliability desktop and mainstream notebook VRMs where BOM simplification and light-load efficiency matter.
Availability
R2J20652ANP#G3 is available at Aetrix Electronics and suitable for desktop motherboard VRMs, server GPU power stages, notebook SoC core rails, and embedded computing power delivery requiring stable component supply and long-term lifecycle support.
Supply support for R2J20652ANP#G3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and timing solutions for automotive, industrial, and computing markets.
The R2J20652ANP#G3 belongs to Renesas' DrMOS product line, engineered specifically for high-efficiency, high-density voltage regulator modules in CPU/GPU power delivery applications demanding tight integration and Intel specification compliance.
FAQ
What is the maximum safe input voltage for R2J20652ANP#G3?
The R2J20652ANP#G3 supports a maximum DC input voltage (VIN) of 22 V under recommended operating conditions. Absolute maximum rating is 27 V DC, but sustained operation above 22 V risks exceeding safe operating area limits and thermal derating. Always observe the 4.5–22 V recommended range and verify PCB layout thermal relief for continuous 35 A operation.
Does R2J20652ANP#G3 require an external bootstrap diode?
No, the R2J20652ANP#G3 does not require an external bootstrap diode. It integrates a dedicated internal bootstrap switch connected to the BOOT pin, which supplies +5 V to the high-side gate driver. This eliminates the need for external Schottky diodes, reducing component count and improving reliability in high-frequency buck converter designs.
How does the LSDBL# pin function in R2J20652ANP#G3?
The LSDBL# pin on the R2J20652ANP#G3 controls low-side gate disable for Discontinuous Conduction Mode (DCM). When LSDBL# is driven low, GL is forced low regardless of PWM state, allowing the inductor current to decay to zero. This improves light-load efficiency. The pin is internally pulled up to Reg5V (150 kΩ), so leaving it open or pulling it high enables normal CCM operation.
What is the purpose of the tri-state detection feature on the PWM pin of R2J20652ANP#G3?
The tri-state detection on the R2J20652ANP#G3's PWM pin monitors for input voltages between 1.2 V and 3.4 V for ≥100 ns. If detected, it forces both GH and GL low to prevent shoot-through during undefined controller states (e.g., reset, floating bus). Recovery requires a clean high-level pulse (>3.4 V) - enhancing system robustness in noisy or unpowered-controller scenarios.
Can R2J20652ANP#G3 operate with a 3.3 V PWM controller?
No, the R2J20652ANP#G3 PWM input is TTL-level with a minimum high threshold of 3.0 V (typical 3.4 V), making it incompatible with standard 3.3 V logic that may not guarantee sufficient noise margin. It is designed for 5 V logic controllers. Using a 3.3 V source risks unreliable high-state recognition and unintended tri-state entry - a level-shifter or 5 V controller is required.
R2J20652ANP#G3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- -
- Channel Type:
- -
- Number of Drivers:
- -
- Gate Type:
- -
- Voltage - Supply:
- -
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- -
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R2J20652ANP#G3 FAQ
1.How can I place an order for R2J20652ANP#G3 through Aetrix?
Please submit a Request for Quotation (RFQ) for R2J20652ANP#G3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R2J20652ANP#G3 reliable?
The price and inventory of R2J20652ANP#G3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R2J20652ANP#G3 is usually 5 days.
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Once your R2J20652ANP#G3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R2J20652ANP#G3?
For technical support, including R2J20652ANP#G3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R2J20652ANP#G3 requirements.
6.How does Aetrix verify that R2J20652ANP#G3 is sourced from the original manufacturer or authorized distributors?
All R2J20652ANP#G3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2J20652ANP#G3 meets industry standards.
7.What is the process for return or replacement of R2J20652ANP#G3?
All R2J20652ANP#G3 units undergo pre-shipment inspection (PSI). If there is an issue with R2J20652ANP#G3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R2J20652ANP#G3 part is unused and in its original packaging.
Return procedure for R2J20652ANP#G3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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