Renesas R2J20654NP#G3
- Part No.:
- R2J20654NP#G3
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- -
- Datasheet:
-
R2J20654NP#G3.pdf
- Description:
- HALF BRIDGE BASED MOSFET DRIVER
- Quantity:
- Payment:

- Shipping:

Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R2J20654NP#G3 from Renesas Electronics is an integrated DrMOS power stage combining high-side and low-side MOSFETs with a matched gate driver in a single QFN40 package. It delivers up to 40 A average output current, supports >1 MHz switching, operates from 4.5–16 V input, and integrates zero-current detection for diode emulation-optimized for high-efficiency, high-density buck converters in desktop/server VRMs.
For engineers reviewing the R2J20654NP#G3 datasheet, R2J20654NP#G3 pinout, R2J20654NP#G3 application, or R2J20654NP#G3 equivalent, key selection considerations include thermal warning/shutdown thresholds (115°C/150°C), tri-state PWM input behavior (150 ns hold-off), bootstrapped high-side drive, and Intel 6×6 DrMOS compliance for CPU core power delivery.
Technical Context
The R2J20654NP#G3 implements a synchronous buck power stage with tightly coupled driver-MOSFET co-design: the internal driver precisely controls GH/GL timing to minimize shoot-through, incorporates overlap protection logic, and features a built-in bootstrap switch eliminating external Schottky diodes. Its UVLO (4.3 V turn-on / 3.8 V shutdown) and dual thermal sensing (THWN open-drain warning at 115°C, THDN latch-off at 150°C) enable robust system-level fault management.
It supports both continuous conduction mode (CCM) and diode emulation mode (DEM) via ZCD_EN# control, where DEM improves light-load efficiency by turning off the low-side MOSFET at inductor current zero-crossing. The PWM input accepts 3.3 V/5 V TTL logic with 1.4–2.0 V tri-state window and 150 ns detection delay, enabling compatibility with modern multi-phase controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Average Output Current | 40 A maximum - enables single-phase support for high-current CPU/GPU core rails |
| Input Voltage Range | 4.5 V to 16 V DC - compatible with standard 12 V input VRM architectures |
| Switching Frequency | Up to >1 MHz - supports high-frequency designs for reduced output filter size |
| Thermal Warning Threshold | 115°C ±15°C - provides early overtemperature alert without disabling operation |
| Thermal Shutdown Threshold | 150°C (latch-off) - protects device under sustained overload or cooling failure |
| PWM Input Logic | TTL-compatible with 3.3 V/5 V support and 150 ns tri-state detection - ensures interoperability with industry-standard controllers |
| Zero-Current Detection | Enabled via ZCD_EN# low signal - activates diode emulation mode to eliminate reverse inductor current and boost light-load efficiency |
Pinout & Package
Package: QFN40 (6 mm × 6 mm × 0.95 mm), lead-free/halogen-free, with three exposed thermal pads (VSWH, VIN, CGND) requiring PCB soldering for thermal and electrical integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| ZCD_EN# (1) | Zero-current detection enable input | Active-low signal that triggers diode emulation mode; internally pulled up to VCIN via 160 kΩ resistor |
| VCIN (2) | Driver supply voltage input | +5 V logic supply with UVLO (4.3 V on / 3.8 V off); powers internal logic and level shifters |
| VDRV (3) | Gate drive supply voltage | +5 V dedicated supply for high- and low-side gate drivers; decoupling critical for stable switching |
| BOOT (4) | Bootstrap capacitor connection | Supplies floating voltage for high-side gate drive; internal boot switch eliminates external SBD |
| CGND (5, 37) | Control ground reference | Logic ground for VCIN/VDRV/PWM; must be externally connected to PGND for noise immunity |
| GH (6) | High-side gate drive output | Monitored high-side gate signal; connects to source of high-side MOSFET (VSWH node) |
| PWM (40) | PWM logic input | 3.3 V/5 V TTL input with hysteresis and 150 ns tri-state detection window |
| DISBL# (39) | Disable control input | Active-low shutdown; internally pulled low during thermal shutdown (THDN) to notify system controller |
| THWN (38) | Thermal warning output | Open-drain logic output asserted low when die temperature exceeds 115°C; requires external pull-up |
| GL (36) | Low-side gate drive output | Monitored low-side gate signal; connects to drain of low-side MOSFET (VSWH node) |
Key Features
| Feature | Design Value |
|---|---|
| Intel 6×6 DrMOS Compliance | Fully meets specification for multi-phase CPU VRMs including timing, footprint, and thermal interface requirements |
| Built-in Bootstrap Switch | Eliminates need for external Schottky diode in high-side gate drive path, reducing BOM count and layout complexity |
| Diode Emulation Mode (DEM) | Enables discontinuous conduction at light load via ZCD_EN#, improving efficiency by preventing reverse inductor current |
| Dual Thermal Protection | Separate thermal warning (115°C) and latch-off shutdown (150°C) with dedicated pins (THWN, DISBL#) for system-level monitoring |
| Tri-State PWM Input | Automatically disables both MOSFETs when PWM signal remains in 1.4–2.0 V hysteresis window for ≥150 ns - prevents undefined states during controller reset |
Applications
| Desktop CPU Core VRM | Server Memory Regulator |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.3 V to modern x86 CPU cores with dynamic load steps exceeding 100 A/μs. IC Role / Device Role / Timing Role: Integrated DrMOS power stage delivering synchronized high-side/low-side switching with optimized dead-time control and fast transient response. Use Value: Enables compact, high-efficiency phase design with 40 A per phase capability and thermal warning signaling for predictive fan control. | Use Scenario: Point-of-load regulator for DDR4/DDR5 memory subsystems requiring tight voltage regulation (<±10 mV) and low-noise operation. IC Role / Device Role / Timing Role: Synchronous buck power stage providing low-VDS(on) switching and zero-current detection to maintain efficiency across wide load range (1–30 A). Use Value: Reduces light-load power loss via diode emulation mode while maintaining Intel 6×6 mechanical and thermal compatibility for server motherboard reuse. |
| GPU Core Power Delivery | AI Accelerator VRM |
Use Scenario: High-density, high-frequency VRM for discrete graphics processing units with peak currents >60 A per rail and strict thermal envelope constraints. IC Role / Device Role / Timing Role: Single-package DrMOS solution integrating driver and MOSFETs to minimize parasitic inductance and support >1 MHz switching for smaller magnetics. Use Value: Achieves lower power dissipation and improved thermal performance versus discrete MOSFET + driver solutions, validated for GPU reference designs. | Use Scenario: Multi-phase power delivery for AI inference/training accelerators requiring rapid load transient response and real-time thermal telemetry. IC Role / Device Role / Timing Role: DrMOS stage with THWN and DISBL# outputs feeding into system microcontroller for closed-loop thermal management and dynamic phase shedding. Use Value: Provides hardware-level thermal warning (115°C) and shutdown (150°C) signals enabling firmware-controlled derating before catastrophic failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DrMOS power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR35203MTRPBF | Same QFN40 package, 40 A rating, but uses external bootstrap diode; no integrated ZCD function | Lacks diode emulation mode - less efficient at light loads; requires additional BOM component | Select when legacy controller compatibility or cost sensitivity outweighs light-load efficiency needs |
| ISL99227BIRZ-T | 40 A rating, Intel 6×6 compliant, includes ZCD and thermal warning, but rated for 20 V max VIN vs. R2J20654NP#G3's 16 V max operating VIN | Higher VIN tolerance allows use in 19 V intermediate bus applications where R2J20654NP#G3 is limited to ≤16 V | Select when system input voltage exceeds 16 V or when ISL99227B's higher thermal shutdown threshold (155°C) is preferred |
Compared with IR35203MTRPBF and ISL99227BIRZ-T, the R2J20654NP#G3 uniquely combines integrated bootstrap switching, precise 115°C thermal warning, and tri-state PWM detection in a single QFN40 package-making it optimal for space-constrained, thermally managed desktop/server VRMs where BOM reduction and light-load efficiency are critical.
Availability
R2J20654NP#G3 is available at Aetrix Electronics and suitable for desktop CPU VRMs, server memory regulators, and GPU core power delivery requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume production.
Supply support for R2J20654NP#G3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and SoC solutions for automotive, industrial, and datacenter applications.
The R2J20654NP#G3 belongs to Renesas' DrMOS product line, engineered specifically for high-efficiency, high-current CPU/GPU core voltage regulation in computing platforms compliant with Intel VRD specifications.
FAQ
What is the maximum recommended input voltage for the R2J20654NP#G3?
The R2J20654NP#G3 has a recommended operating input voltage range of 4.5 V to 16 V DC. Its absolute maximum VIN rating is 20 V, but sustained operation above 16 V violates the Recommended Operating Conditions and may compromise reliability or thermal performance. Designers should maintain VIN ≤16 V for full specification compliance and long-term stability in R2J20654NP#G3-based VRMs.
How does the R2J20654NP#G3 implement diode emulation mode?
The R2J20654NP#G3 implements diode emulation mode (DEM) via the ZCD_EN# pin: when this pin is driven low, the internal zero-current detector monitors inductor current and automatically turns off the low-side MOSFET at zero-crossing. This prevents reverse current flow and improves light-load efficiency. The R2J20654NP#G3's DEM is hardware-automated and requires no external control beyond asserting ZCD_EN#.
Does the R2J20654NP#G3 require an external bootstrap diode?
No, the R2J20654NP#G3 does not require an external bootstrap diode. It integrates a dedicated bootstrap switch between VDRV and BOOT pins, eliminating the need for an external Schottky diode in the high-side gate drive circuit. This reduces BOM count, simplifies layout, and improves reliability compared to discrete-driver solutions requiring external bootstrap components.
What is the function of the THWN pin on the R2J20654NP#G3?
The THWN pin on the R2J20654NP#G3 is an open-drain thermal warning output that asserts low when the internal driver IC junction temperature exceeds 115°C. It serves as an early overtemperature indicator-distinct from thermal shutdown-and requires an external pull-up resistor (e.g., 51 kΩ to 5 V) for proper logic-level signaling. THWN remains active during normal operation above threshold and does not disable the R2J20654NP#G3.
Can the R2J20654NP#G3 operate with both 3.3 V and 5 V PWM controllers?
Yes, the R2J20654NP#G3 PWM input is fully compatible with both 3.3 V and 5 V TTL-level controllers. Its input threshold is defined by hysteresis (2.6 V high, 0.8 V low), and it includes a 150 ns tri-state detection window for undefined logic states. This dual-voltage support allows seamless integration with modern digital PWM controllers used in Intel-compliant VRMs without level-shifting circuitry.
R2J20654NP#G3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- -
- Channel Type:
- -
- Number of Drivers:
- -
- Gate Type:
- -
- Voltage - Supply:
- -
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- -
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R2J20654NP#G3 FAQ
1.How can I place an order for R2J20654NP#G3 through Aetrix?
Please submit a Request for Quotation (RFQ) for R2J20654NP#G3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R2J20654NP#G3 reliable?
The price and inventory of R2J20654NP#G3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R2J20654NP#G3 is usually 5 days.
3.What payment methods are accepted for R2J20654NP#G3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R2J20654NP#G3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R2J20654NP#G3?
R2J20654NP#G3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R2J20654NP#G3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R2J20654NP#G3?
For technical support, including R2J20654NP#G3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R2J20654NP#G3 requirements.
6.How does Aetrix verify that R2J20654NP#G3 is sourced from the original manufacturer or authorized distributors?
All R2J20654NP#G3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2J20654NP#G3 meets industry standards.
7.What is the process for return or replacement of R2J20654NP#G3?
All R2J20654NP#G3 units undergo pre-shipment inspection (PSI). If there is an issue with R2J20654NP#G3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R2J20654NP#G3 part is unused and in its original packaging.
Return procedure for R2J20654NP#G3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R2J20654NP#G3 Tags

-
ZXGD3009E6TA
Diodes Incorporated

-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments

-
MCP1416T-E/OT
Microchip Technology

-
MCP1402T-E/OT
Microchip Technology

-
MCP1415T-E/OT
Microchip Technology

-
MCP1401T-E/OT
Microchip Technology

-
IX4428NTR
Littelfuse Inc.

-
IRS2005STRPBF
Infineon Technologies

-
IRS2008STRPBF
Infineon Technologies

-
IX4310TTR
Littelfuse Inc.

-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

