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Renesas R2J20656ANP#G0
- Part No.:
- R2J20656ANP#G0
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- -
- Datasheet:
-
R2J20656ANP#G0.pdf
- Description:
- HALF BRIDGE BASED MOSFET DRIVER
- Quantity:
- Payment:
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Inventory:2,500
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Product details
Overview
R2J20656ANP#G0 from Renesas Electronics is an integrated DrMOS power stage combining high-side and low-side MOS FETs with a matched gate driver in a single QFN40 package. It delivers up to 35 A average output current, supports 1 MHz+ switching, operates with VIN up to 22 V, and features zero-current detection for diode emulation mode - optimized for high-efficiency, low-voltage buck converters in CPU/GPU VRMs.
For engineers reviewing the R2J20656ANP#G0 datasheet, R2J20656ANP#G0 pinout, R2J20656ANP#G0 application, or R2J20656ANP#G0 equivalent, key selection considerations include thermal warning/shutdown thresholds (115°C/150°C), tri-state PWM input behavior, bootstrap-integrated high-side drive, and Intel 6×6 DrMOS compliance for notebook/server voltage regulation.
Technical Context
The R2J20656ANP#G0 implements a synchronous buck topology with tightly coupled high-side and low-side MOS FETs sharing minimal parasitic inductance due to monolithic multi-chip module integration. Its driver includes overlap protection, level-shifting logic, and UVLO on VCIN (4.3 V turn-on / 3.8 V turn-off).
It supports dual operating modes via ZCD_EN#: continuous conduction mode (ZCD_EN# = H/Open) and diode emulation mode (ZCD_EN# = L), enabling light-load efficiency optimization. Thermal management uses open-drain THWN (115°C warning) and latch-off THDN (150°C shutdown), with internal DISBL# pull-down during thermal fault.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Average Output Current | 35 A max - enables single-phase CPU core supply in compact VRM designs |
| Input Voltage Range (VIN) | 4.5 V to 22 V - compatible with 12 V and 19 V input rails in notebooks/servers |
| Switching Frequency Support | Up to 1 MHz+ - allows use of small-output inductors (e.g., 0.45 μH) without sacrificing efficiency |
| Thermal Warning Threshold | 115°C ±15°C - provides early system-level thermal margin alert before shutdown |
| Zero-Current Detection Enable | Active-low ZCD_EN# pin - enables automatic low-side FET turn-off at inductor current zero-crossing |
| Package | QFN40 (6 mm × 6 mm × 0.95 mm) - surface-mount, thermally enhanced footprint with exposed PGND/VIN/VSWH pads |
| Control Supply (VCIN/VDRV) | 4.5 V to 5.5 V - TTL-compatible 5 V logic interface with 49 mA typical operating current at 1 MHz |
Pinout & Package
Package: QFN40 (6 mm × 6 mm × 0.95 mm), thermally enhanced with three large exposed die-pads (VIN, PGND, VSWH) requiring PCB solder connection per Renesas mechanical drawing PVQN0040KE-A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| ZCD_EN# (1) | Zero-current detection enable input | Active-low control for diode emulation mode; internally pulled up to VCIN (160 kΩ) |
| VCIN (2) | Driver control supply input | 5 V logic rail with UVLO (4.3 V on / 3.8 V off); powers internal logic and level shifters |
| VDRV (3) | Gate drive supply input | 5 V source for high- and low-side gate drivers; decoupled externally with 0.1 μF ceramic |
| BOOT (4) | High-side bootstrap node | Internally switched +5 V supply for high-side gate; eliminates external Schottky diode |
| CGND (5, 37, Pad) | Control ground reference | Signal ground for VCIN/VDRV/PWM logic; must be externally connected to PGND |
| GH (6) | High-side gate monitor output | Test point for high-side gate voltage; not a drive output - driven internally only |
| VIN (8–14, Pad) | Main power input | 4.5–22 V DC input; connects to high-side FET drain and internal driver bias circuitry |
| VSWH (7, 15, 29–35, Pad) | Switch node output | Phase node connecting high-side source and low-side drain; requires low-inductance layout |
| PGND (16–28) | Power ground return | Low-impedance return path for both MOS FETs; multiple pins reduce IR drop and EMI |
| GL (36) | Low-side gate monitor output | Test point for low-side gate voltage; not a drive output - driven internally only |
| THWN (38) | Thermal warning open-drain output | Active-low signal asserted at ~115°C; requires external pull-up resistor (e.g., 51 kΩ) |
| DISBL# (39) | Global disable input | Active-low shutdown control; internally pulled low during thermal shutdown (>150°C) |
| PWM (40) | TTL-level PWM input | 5 V logic interface with tri-state detection (150 ns hold-off) and hysteresis (1.5–3.2 V window) |
Key Features
| Feature | Design Value |
|---|---|
| Intel 6×6 DrMOS compliance | Fully meets specification for pin assignment, timing, thermal response, and electrical interface in client/server VRMs |
| Built-in bootstrap switch | Eliminates external SBD, reducing BOM count and layout complexity while maintaining reliable high-side drive |
| Diode emulation with ZCD | Enables discontinuous conduction mode at light loads, improving efficiency by preventing reverse inductor current |
| Dual thermal protection | Separate THWN (115°C warning) and THDN (150°C latch-off) outputs allow staged thermal management in host systems |
| Tri-state PWM input | Automatically disables both FETs when PWM signal floats or resides in hysteresis window >150 ns - prevents shoot-through during controller reset |
Applications
| Server CPU Core VRM | Notebook GPU Power Stage |
|---|---|
Use Scenario: Single-phase 1.3 V/35 A core supply for dual-socket Xeon platforms with dynamic load steps up to 200 A/μs. IC Role / Device Role / Timing Role: Integrated DrMOS power stage providing synchronized high/low-side switching, bootstrap generation, and thermal monitoring. Use Value: Enables compact, high-density VRM design with <1.5 W conduction loss at 25 A and real-time thermal warning for predictive fan control. |
Use Scenario: High-efficiency 0.95 V/25 A GPU rail in ultra-thin gaming notebooks with strict thermal envelope (<65°C PCB temp). IC Role / Device Role / Timing Role: Synchronous buck power stage with diode emulation mode activated below 3 A load to maintain >85% efficiency at light load. Use Value: Reduces light-load power loss by 35% vs. forced CCM operation and eliminates need for external current-sense resistors. |
| Desktop Platform Memory VRM | AI Accelerator Board Power Delivery |
Use Scenario: DDR5 memory subsystem supply delivering 1.1 V/20 A with fast transient response (<100 ns) to memory controller burst requests. IC Role / Device Role / Timing Role: Low-inductance DrMOS stage minimizing VOUT droop during 10 A/μs load transients via optimized internal chip interconnect. Use Value: Achieves <±15 mV regulation window under 10 A step load with 0.45 μH inductor and no external compensation. |
Use Scenario: Auxiliary 0.8 V/30 A power rail for FPGA-based AI inference accelerators with variable workload and thermal throttling requirements. IC Role / Device Role / Timing Role: Thermally intelligent power stage feeding FPGA VCCINT, with THWN signal triggering dynamic clock scaling before thermal shutdown. Use Value: Prevents system crash by enabling host firmware to reduce compute load 15 seconds before 150°C shutdown threshold is reached. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DrMOS power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR35201MTRPBF | 8 mm × 8 mm QFN, 40 A rating, supports 3-phase interleaving via SYNC pin; lacks ZCD_EN# and THWN | Targeted at multi-phase server VRMs where phase synchronization is required; no diode emulation support | Select when designing >30 A multi-phase solutions needing inter-phase timing coordination |
| MP86957DQKT-LF-Z | 5 mm × 6 mm QFN, 30 A rating, integrated current sensing; no thermal warning output or tri-state PWM | Optimized for space-constrained embedded systems with analog current monitoring; no system-level thermal signaling | Select when board area is critical and thermal telemetry is handled externally via temperature sensors |
Compared with IR35201MTRPBF and MP86957DQKT-LF-Z, the R2J20656ANP#G0 uniquely combines Intel 6×6 compliance, diode emulation, and dual thermal signaling in a 6 mm × 6 mm footprint - making it optimal for single-phase, thermally aware client/server VRMs requiring light-load efficiency and predictive thermal management.
Availability
R2J20656ANP#G0 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory regulators, and AI accelerator board power delivery requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for R2J20656ANP#G0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and computing markets.
The R2J20656ANP#G0 belongs to Renesas' DrMOS product line, engineered specifically for high-frequency, high-current voltage regulation in CPU/GPU power delivery networks where integration, thermal intelligence, and Intel specification compliance are critical.
FAQ
What is the maximum safe input voltage for R2J20656ANP#G0?
The R2J20656ANP#G0 supports a DC input voltage (VIN) up to +22 V under recommended operating conditions, with an absolute maximum rating of +27 V. Exceeding 22 V may trigger overvoltage protection or degrade reliability; operation above 27 V risks permanent damage per Absolute Maximum Ratings on page 4 of the datasheet.
Does R2J20656ANP#G0 require an external bootstrap diode?
No, the R2J20656ANP#G0 integrates a bootstrap switch that supplies the high-side gate drive voltage directly from VDRV through an internal MOS FET. This eliminates the need for an external Schottky diode, simplifying layout and reducing component count while maintaining robust high-side drive performance.
How does the ZCD_EN# pin affect R2J20656ANP#G0 operation?
When ZCD_EN# is pulled low, the R2J20656ANP#G0 enters diode emulation mode, automatically turning off the low-side MOS FET at inductor current zero-crossing to prevent reverse current and improve light-load efficiency. When ZCD_EN# is high or open, the device operates in continuous conduction mode with fixed PWM timing.
What thermal protection features does R2J20656ANP#G0 provide?
The R2J20656ANP#G0 provides two independent thermal protections: THWN (thermal warning) asserts an open-drain low signal at ~115°C to alert the system controller, and THDN (thermal shutdown) latches off both MOS FETs at ~150°C while pulling DISBL# low to notify upstream logic - ensuring fail-safe operation under overload conditions.
Is R2J20656ANP#G0 pin-compatible with other DrMOS devices?
The R2J20656ANP#G0 follows the Intel 6×6 DrMOS mechanical and electrical specification, including pin assignment, thermal pad layout, and logic interface levels. However, functional differences - such as ZCD_EN# presence, THWN output, and tri-state PWM behavior - mean direct substitution requires verification of control signal compatibility and thermal management integration in the target design.
R2J20656ANP#G0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- -
- Channel Type:
- -
- Number of Drivers:
- -
- Gate Type:
- -
- Voltage - Supply:
- -
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- -
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R2J20656ANP#G0 FAQ
1.How can I place an order for R2J20656ANP#G0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R2J20656ANP#G0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R2J20656ANP#G0 reliable?
The price and inventory of R2J20656ANP#G0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R2J20656ANP#G0 is usually 5 days.
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R2J20656ANP#G0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R2J20656ANP#G0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R2J20656ANP#G0?
For technical support, including R2J20656ANP#G0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R2J20656ANP#G0 requirements.
6.How does Aetrix verify that R2J20656ANP#G0 is sourced from the original manufacturer or authorized distributors?
All R2J20656ANP#G0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2J20656ANP#G0 meets industry standards.
7.What is the process for return or replacement of R2J20656ANP#G0?
All R2J20656ANP#G0 units undergo pre-shipment inspection (PSI). If there is an issue with R2J20656ANP#G0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R2J20656ANP#G0 part is unused and in its original packaging.
Return procedure for R2J20656ANP#G0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R2J20656ANP#G0 Tags
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