Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas R2J20657BNP#G2

Part No.:
R2J20657BNP#G2
Manufacturer:
Renesas
Category:
Gate Drivers
Package:
-
Datasheet:
AetrixR2J20657BNP#G2.pdf
Description:
HALF BRIDGE BASED MOSFET DRIVER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,492

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

R2J20657BNP#G2 from Renesas Electronics is an integrated DrMOS power stage combining high-side and low-side MOS FETs with a matched gate driver in a single QFN40 package. It delivers up to 40 A average output current, supports >1 MHz switching, operates with VIN up to 20 V, and integrates thermal warning (115°C) and shutdown (150°C) for desktop/server VRMs.

For engineers reviewing the R2J20657BNP#G2 datasheet, R2J20657BNP#G2 pinout, R2J20657BNP#G2 application, or R2J20657BNP#G2 equivalent, key selection criteria include its Intel 6×6 DrMOS compliance, built-in bootstrap switch eliminating external SBD, tri-state PWM input enabling zero-current detection, and dual thermal protection architecture.

Technical Context

The R2J20657BNP#G2 implements a synchronous buck topology with tightly coupled high-side and low-side MOS FETs and driver on a single die substrate, minimizing parasitic inductance for high-frequency operation. Its UVLO thresholds (VH = 7.4 V, VL = 7.0 V) and supervisor circuitry (active above 4.3 V, shutdown below 3.8 V) govern 5 V regulator enablement and driver activation.

It features dual-mode control logic: continuous conduction mode when LSDBL# is low, and zero-current detection mode when PWM is mid-voltage or high-impedance. Thermal monitoring uses open-drain THWN (115°C warning) and internal latch-off THDN (150°C shutdown), with DISBL# pulled low during thermal fault to notify system controller.

Key Specifications

ParameterValue and Actual Design Meaning
VIN Range4.5 V to 16 V DC - defines compatible input bus voltages for desktop/server 12 V rail applications.
Average Output Current40 A max - enables high-current CPU/GPU core voltage regulation without external parallel stages.
Switching FrequencyUp to 1 MHz+ - supports compact magnetics and fast transient response in modern VRMs.
Thermal Warning Threshold115°C ±15°C - provides early overtemperature alert while maintaining full operation until shutdown.
Thermal Shutdown Threshold150°C (latch-off) - protects device from destructive overheating with automatic DISBL# assertion.
VCIN Supply Range4.5–5.5 V or 8–22 V - allows flexible biasing via internal 5 V regulator or external supply.
PWM Input LogicTTL-compatible (VH-PWM ≥ 4.1 V, VL-PWM ≤ 0.8 V) with tri-state detection - enables seamless interface with standard VRM controllers.

Pinout & Package

Package: QFN40 (6 mm × 6 mm × 0.95 mm), thermally enhanced with three exposed die pads (High-side MOS Pad, Low-side MOS Pad, Driver Pad) requiring PCB soldering per datasheet note.

Pin/TerminalCircuit RoleDesign Meaning
LSDBL# (1)Low-side gate disable controlAssert low to force discontinuous conduction mode; internally pulled up to Reg5V (160 kΩ).
Reg5V (2)5 V logic regulator outputSupplies 5 V ±0.25 V at up to 10 mA; requires ≥0.1 μF ceramic capacitor to CGND.
VCIN (3)Driver supply inputFeeds UVLO and supervisor; 4.5–5.5 V or 8–22 V range determines regulator enable state.
BOOT (4)Bootstrap voltage nodeInternally switched +5 V source for high-side gate drive; no external SBD required.
CGND (5, 37, Pad)Control ground referenceMust be externally connected to PGND; separates control and power return paths.
GH (6)High-side gate monitorProvides access to high-side gate signal for probing or feedback; not a drive output.
VIN (8–14, Pad)Main power inputConnects to 12 V input rail; multiple pins and pad ensure low-impedance path for high di/dt.
VSWH (7, 15, 29–35, Pad)Switch node outputPhase node connecting high-side drain and low-side drain; requires low-inductance layout.
PGND (16–28)Power ground returnMultiple pins and large pad minimize power loop inductance and thermal resistance.
GL (36)Low-side gate monitorProvides access to low-side gate signal; used for timing verification or diagnostics.
THWN (38)Thermal warning indicatorOpen-drain output active low at >115°C; requires external pull-up resistor (e.g., 51 kΩ).
DISBL# (39)Global disable inputDrives GL/GH low when asserted; pulled low internally during thermal shutdown.
PWM (40)PWM logic inputAccepts 5 V TTL signals; mid-voltage or high-Z triggers zero-current detection mode.

Key Features

FeatureDesign Value
Intel 6×6 DrMOS compliantMeets specification for interoperability with industry-standard VRM controllers and layout guidelines.
Built-in bootstrap switchEliminates need for external Schottky diode, reducing BOM count and layout complexity.
Tri-state PWM input supportEnables zero-current detection for improved light-load efficiency in DCM operation.
Dual thermal protectionSeparate warning (115°C) and latch-off shutdown (150°C) provide graded thermal management.
Low-side MOS with integrated SBDReduces reverse recovery losses and ringing during body-diode conduction.

Applications

Desktop CPU Voltage RegulationServer GPU Core Power

Use Scenario: Primary 1.3 V core supply for multi-core x86 processors in ATX desktop motherboards.

IC Role / Device Role / Timing Role: Integrated DrMOS power stage delivering high-current, high-efficiency buck conversion synchronized to VRM controller PWM.

Use Value: Enables >1 MHz operation with minimal output ripple and fast transient response under dynamic CPU load changes.

Use Scenario: High-density 0.8–1.2 V core rail for PCIe-based AI accelerators in 1U/2U rack servers.

IC Role / Device Role / Timing Role: Single-chip power stage handling up to 40 A per phase in multiphase VRM designs.

Use Value: Reduces board area and thermal hotspots compared to discrete MOSFET + driver solutions.

Workstation Memory SubsystemHigh-Performance Computing Node

Use Scenario: DDR5 memory VDDQ/VPP regulation in professional workstations with ECC RAM modules.

IC Role / Device Role / Timing Role: Synchronous buck converter providing tightly regulated, low-noise supply with fast load-step response.

Use Value: Maintains signal integrity and timing margins under bursty memory access patterns.

Use Scenario: Core voltage delivery for FPGA-based compute nodes in edge inference clusters.

IC Role / Device Role / Timing Role: Phase-leg module in interleaved multiphase topology supporting dynamic voltage/frequency scaling.

Use Value: Supports adaptive power management via LSDBL#-controlled DCM and PWM tri-state ZCD modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DrMOS power stage applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR35201MTRPBF6×6 mm QFN, 40 A rating, but lacks integrated bootstrap switch and requires external SBD.Same Intel 6×6 footprint; higher external component count increases layout sensitivity.Choose if legacy design already includes external bootstrap diode and controller supports IR's specific timing.
ISL99227BIRZ-T40 A rating, 6×6 mm QFN, includes bootstrap switch, but thermal warning threshold is 125°C (vs. 115°C).Compatible pinout and control interface; slightly higher thermal warning point reduces early alert margin.Prefer for designs where tighter thermal headroom is acceptable and Renesas ecosystem integration is not required.

Compared with IR35201MTRPBF and ISL99227BIRZ-T, the R2J20657BNP#G2 offers earlier thermal warning (115°C), eliminates external SBD via integrated bootstrap switch, and provides native tri-state PWM support for zero-current detection-reducing system-level complexity and improving light-load efficiency.

Availability

R2J20657BNP#G2 is available at Aetrix Electronics and suitable for desktop motherboard design, server VRM development, and high-performance computing power delivery requiring stable component supply and long-term industrial lifecycle support.

Supply support for R2J20657BNP#G2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise markets.

The R2J20657BNP#G2 belongs to Renesas' DrMOS product line, engineered specifically for high-efficiency, high-density voltage regulation in Intel-compliant desktop and server platforms.

FAQ

What is the maximum safe operating temperature for R2J20657BNP#G2 before thermal shutdown activates?

The R2J20657BNP#G2 initiates thermal shutdown at a junction temperature of 150°C, with latch-off behavior that holds GL and GH low until VCIN drops below UVLO threshold. This ensures robust protection against sustained overtemperature conditions. The R2J20657BNP#G2 also provides thermal warning at 115°C via the open-drain THWN pin, allowing system-level mitigation before shutdown occurs.

Does R2J20657BNP#G2 require an external bootstrap diode?

No, the R2J20657BNP#G2 integrates a bootstrap switch that supplies +5 V to the BOOT pin internally, eliminating the need for an external Schottky diode. This simplifies layout, reduces BOM cost, and improves reliability by removing a common failure point. The R2J20657BNP#G2 datasheet explicitly states this feature in both the description and features sections.

How does the LSDBL# pin affect R2J20657BNP#G2 operation in discontinuous conduction mode?

When LSDBL# is driven low, the R2J20657BNP#G2 disables the low-side gate driver, forcing discontinuous conduction mode (DCM). This reduces light-load losses and improves efficiency at partial loads. The R2J20657BNP#G2 datasheet confirms LSDBL# is internally pulled up to Reg5V (160 kΩ), so leaving it open defaults to continuous conduction mode.

What are the valid voltage ranges for VCIN on R2J20657BNP#G2?

The R2J20657BNP#G2 supports two VCIN operating ranges: 4.5–5.5 V (when connected to Reg5V for internal regulator use) or 8–22 V (for direct high-voltage biasing). The UVLO threshold is 7.4 V (turn-on) and 7.0 V (turn-off), ensuring stable regulator enablement. These values are specified in the Recommended Operating Conditions table of the R2J20657BNP#G2 datasheet.

Can R2J20657BNP#G2 operate with a 3.3 V PWM input signal?

No, the R2J20657BNP#G2 requires a 5 V TTL-level PWM input: minimum high-level voltage is 4.1 V and maximum low-level voltage is 0.8 V. A 3.3 V signal falls outside the valid input range and may cause unreliable switching or undefined behavior. The R2J20657BNP#G2 datasheet specifies these thresholds in the Electrical Characteristics table under "PWM input high level" and "PWM input low level."

R2J20657BNP#G2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
-
Channel Type:
-
Number of Drivers:
-
Gate Type:
-
Voltage - Supply:
-
Logic Voltage - VIL, VIH:
-
Current - Peak Output (Source, Sink):
-
Input Type:
-
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R2J20657BNP#G2 FAQ

1.How can I place an order for R2J20657BNP#G2 through Aetrix?

Please submit a Request for Quotation (RFQ) for R2J20657BNP#G2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R2J20657BNP#G2 reliable?

The price and inventory of R2J20657BNP#G2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R2J20657BNP#G2 is usually 5 days.

3.What payment methods are accepted for R2J20657BNP#G2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R2J20657BNP#G2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R2J20657BNP#G2?

R2J20657BNP#G2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R2J20657BNP#G2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R2J20657BNP#G2?

For technical support, including R2J20657BNP#G2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R2J20657BNP#G2 requirements.

6.How does Aetrix verify that R2J20657BNP#G2 is sourced from the original manufacturer or authorized distributors?

All R2J20657BNP#G2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2J20657BNP#G2 meets industry standards.

7.What is the process for return or replacement of R2J20657BNP#G2?

All R2J20657BNP#G2 units undergo pre-shipment inspection (PSI). If there is an issue with R2J20657BNP#G2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R2J20657BNP#G2 part is unused and in its original packaging.

Return procedure for R2J20657BNP#G2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R2J20657BNP#G2 Tags

  • R2J20657BNP#G2
  • R2J20657BNP#G2 PDF
  • R2J20657BNP#G2 Datasheet
  • R2J20657BNP#G2 Specifications
  • R2J20657BNP#G2 Images
  • Renesas
  • Renesas R2J20657BNP#G2
  • Buy R2J20657BNP#G2
  • R2J20657BNP#G2 Price
  • R2J20657BNP#G2 Distributor
  • R2J20657BNP#G2 Supplier
  • R2J20657BNP#G2 Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER