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Renesas R2J20658NP#G0
- Part No.:
- R2J20658NP#G0
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- -
- Datasheet:
-
R2J20658NP#G0.pdf
- Description:
- HALF BRIDGE BASED MOSFET DRIVER
- Quantity:
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Product details
Overview
R2J20658NP from Renesas Electronics is an integrated DrMOS power stage combining high-side and low-side MOSFETs with a matched gate driver in a single QFN40 (6 mm × 6 mm) package. It delivers up to 40 A average output current, supports >1 MHz switching, operates with VIN up to 20 V, and incorporates thermal warning (115°C) and shutdown (150°C) for desktop/server CPU/GPU VRMs.
For engineers reviewing the R2J20658NP datasheet, R2J20658NP pinout, R2J20658NP application, or R2J20658NP equivalent, this device serves as a drop-in Intel 6×6 DrMOS-compliant solution for high-efficiency, high-density synchronous buck converters requiring precise timing control, built-in bootstrap switching, and DCM support via LSDBL#.
Technical Context
The R2J20658NP implements a tightly coupled multi-chip module architecture where parasitic inductance between driver and MOSFET dies is minimized, enabling stable operation above 1 MHz. Its internal UVLO (7.4 V turn-on / 7.0 V turn-off) and supervisor circuitry (4.3 V activation / 3.8 V shutdown) govern 5 V regulator enablement and driver state transitions independently of DISBL#.
Timing is optimized for low-voltage, high-current buck conversion: the tri-state PWM input detects 150 ns dwell within 1.4–2.0 V hysteresis window to disable both GH and GL; LSDBL# asserts low to force DCM by disabling GL while GH remains controllable; THWN provides open-drain thermal warning at 115°C without halting operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Average Output Current | 40 A maximum - enables single-phase CPU/GPU core power delivery without parallel stages |
| Switching Frequency Support | Up to 1 MHz+ - allows compact magnetics and reduced output capacitance in VRM designs |
| VIN Operating Range | 4.5 V to 16 V DC - compatible with standard 12 V input rails and intermediate bus architectures |
| Thermal Warning Threshold | 115°C (typ.) - provides early overtemperature alert to system controller before performance derating |
| Thermal Shutdown Threshold | 150°C (latch-off) - protects against catastrophic failure by forcing GH/GL low and pulling DISBL# low |
| VCIN Supply Range | 4.5–5.5 V or 8–22 V - supports dual-mode operation: internal 5 V regulator or external VCIN sourcing |
| PWM Input Compatibility | 3.3 V and 5 V TTL logic - interoperable with common PWM controllers without level-shifting |
Pinout & Package
Package: QFN40 (6 mm × 6 mm × 0.95 mm), thermally enhanced with three exposed die-pads (VSWH, VIN, CGND) requiring PCB soldering per datasheet note.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 LSDBL# | Low-side gate disable control | Active-low input enabling Discontinuous Conduction Mode (DCM); internally pulled up to Reg5V |
| 2 Reg5V | +5 V logic supply output | Stable 4.95–5.45 V regulated output for external logic; requires ≥0.1 μF ceramic capacitor to CGND |
| 3 VCIN | Driver supply input | UVLO-controlled input (7.4 V turn-on); powers internal driver and 5 V regulator when ≥7.4 V |
| 4 BOOT | Bootstrap voltage node | Internally switched +5 V supply for high-side gate drive; eliminates need for external Schottky diode |
| 5, 37 CGND | Control ground reference | Signal ground for PWM, DISBL#, THWN; must be externally connected to PGND |
| 6 GH | High-side gate drive output | Monitored gate signal for high-side MOSFET; driven by internal level shifter and overlap protection |
| 8–14, Pad VIN | Main power input | Input voltage connection (4.5–16 V); multiple pins and pad reduce resistance/inductance for high-current paths |
| 7, 15, 29–35, Pad VSWH | Switch node output | Phase node connecting high-side drain and low-side drain; critical for EMI and layout; requires low-inductance routing |
| 16–28 PGND | Power ground return | High-current ground path for MOSFET sources and body diodes; multiple pins and pad minimize IR drop |
| 36 GL | Low-side gate drive output | Monitored gate signal for low-side MOSFET; disabled when LSDBL# = L to enter DCM |
| 38 THWN | Thermal warning indicator | Open-drain output active low at >115°C; requires external pull-up resistor (e.g., 51 kΩ) for system monitoring |
| 39 DISBL# | Global disable control | Active-low shutdown: forces GH/GL low but leaves Reg5V active; pulled low internally during thermal shutdown |
| 40 PWM | PWM logic input | TTL-compatible input with 150 ns tri-state detection window (1.4–2.0 V); supports 3.3 V/5 V controllers |
Key Features
| Feature | Design Value |
|---|---|
| Intel 6×6 DrMOS compliance | Fully satisfies mechanical, electrical, and thermal requirements of Intel's DrMOS specification for server/desktop VRMs |
| Built-in bootstrap switch | Eliminates external Schottky diode on BOOT rail, reducing BOM count and improving reliability in high-frequency operation |
| Low-side MOSFET with integrated SBD | Reduces reverse recovery loss and ringing during dead-time, improving efficiency and EMI in synchronous rectification |
| Dual thermal protection | Independent thermal warning (115°C) and latch-off shutdown (150°C) provide layered safety for sustained high-load operation |
| Tri-state PWM input | Automatically disables both GH and GL when PWM signal floats or dwells in hysteresis window, preventing shoot-through |
| DCM support via LSDBL# | Enables discontinuous conduction mode by disabling GL only-preserving high-side control for light-load efficiency optimization |
Applications
| Server CPU Voltage Regulator | Desktop GPU Power Stage |
|---|---|
Use Scenario: High-current, multi-phase VRM supplying core voltage to dual-socket Xeon processors under dynamic load transients. IC Role / Device Role / Timing Role: Single-phase DrMOS power stage delivering up to 40 A with <150 ns propagation delay and overlap protection. Use Value: Enables compact, high-efficiency phase design meeting Intel VR12.5/VR13 specs with built-in thermal monitoring and DCM capability. |
Use Scenario: Single-phase auxiliary rail for GPU memory or I/O voltage in high-end gaming desktops with tight board space constraints. IC Role / Device Role / Timing Role: Integrated high/low-side MOSFET + driver replacing discrete solutions; supports >1 MHz switching for smaller inductors. Use Value: Reduces component count by 6+ devices per phase and improves thermal response via on-die temperature sensing (THWN/THDN). |
| AI Accelerator Core Rail | High-Density Rack-Mount PSU |
Use Scenario: Point-of-load regulation for FPGA or ASIC cores in AI training accelerators requiring rapid load-step response and thermal margin. IC Role / Device Role / Timing Role: Fast-switching DrMOS stage with 150 ns tri-state hold-off and 115°C thermal warning for predictive thermal management. Use Value: Delivers 40 A peak current with minimal layout parasitics due to monolithic QFN40 integration, supporting <500 ns load-step recovery. |
Use Scenario: Secondary-side synchronous buck stage in modular 3 kW rack PSUs powering edge compute nodes with strict efficiency targets. IC Role / Device Role / Timing Role: High-reliability power stage with latch-off thermal shutdown (150°C), Pb-free/Halogen-free construction, and 20 V max VIN rating. Use Value: Extends service life in thermally constrained environments via double thermal protection and robust absolute max ratings (e.g., VSWH(AC) = 30 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DrMOS power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR35201MTRPBF | 8 mm × 8 mm QFN; higher Rds(on) (high-side 3.5 mΩ, low-side 1.8 mΩ vs. R2J20658NP's 2.8/1.5 mΩ); no integrated SBD on low-side | Targeted at enterprise server VRMs with larger board area; lacks DCM support via dedicated LSDBL# pin | Select when footprint size is less constrained and legacy Intel VR12 compatibility is required over VR13/VR14 features |
| ISL99227BIRZ | 6 mm × 6 mm QFN; lower max current (35 A vs. 40 A); THWN threshold at 125°C (vs. 115°C); no tri-state PWM hysteresis window | Optimized for client notebook VRMs; thermal warning triggers later, reducing early throttling in burst-load scenarios | Select for cost-sensitive mobile platforms where 5 A lower current headroom and relaxed thermal warning are acceptable |
Compared with IR35201MTRPBF and ISL99227BIRZ, the R2J20658NP offers superior current density (40 A in 6×6 mm), earlier thermal warning (115°C), integrated low-side SBD for reduced ringing, and explicit DCM control-making it optimal for next-gen high-power-density VRMs demanding tight thermal margins and light-load efficiency.
Availability
R2J20658NP is available at Aetrix Electronics and suitable for server CPU voltage regulation, desktop GPU power delivery, AI accelerator core rails, and high-density rack-mount PSU applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for R2J20658NP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and datacenter markets.
The R2J20658NP belongs to Renesas' DrMOS product line, engineered specifically for high-efficiency, high-current synchronous buck converters in Intel-compliant server and desktop VRMs-emphasizing thermal intelligence, integration density, and fast transient response.
FAQ
What is the maximum safe operating frequency for the R2J20658NP?
The R2J20658NP is characterized for stable operation above 1 MHz, with typical application data validated at 600 kHz and 1 MHz. Its monolithic QFN40 construction minimizes inter-die parasitics, enabling reliable high-frequency switching up to 1.2 MHz in well-designed layouts with proper gate drive strength and thermal management. The R2J20658NP datasheet confirms functionality beyond 1 MHz in recommended operating conditions.
Does the R2J20658NP require an external bootstrap diode?
No, the R2J20658NP does not require an external bootstrap diode. It integrates a dedicated internal bootstrap switch on the BOOT pin, which supplies +5 V to the high-side gate driver when enabled. This eliminates the need for an external Schottky diode, reducing BOM count, layout complexity, and potential failure points in high-frequency VRM designs using the R2J20658NP.
How does the LSDBL# pin function in the R2J20658NP?
The LSDBL# pin on the R2J20658NP is an active-low input that disables the low-side MOSFET gate driver (GL) while leaving the high-side driver (GH) operational. When asserted low, it forces Discontinuous Conduction Mode (DCM) to improve light-load efficiency. The pin is internally pulled up to Reg5V (160 kΩ), so it may be left open or pulled up to VCIN if DCM is not needed. This feature is unique to the R2J20658NP among comparable DrMOS devices.
What thermal protection mechanisms are implemented in the R2J20658NP?
The R2J20658NP implements two independent thermal protections: (1) THWN open-drain output activates at 115°C (typ.) to warn the system controller, and (2) THDN internal latch-off shutdown triggers at 150°C, forcing GH/GL low and pulling DISBL# low. Both functions monitor the driver IC junction temperature directly-not ambient or case temperature-ensuring accurate, localized thermal response in the R2J20658NP.
Can the R2J20658NP operate with a 5 V VCIN supply?
Yes, the R2J20658NP supports VCIN operation at 4.5–5.5 V, provided VCIN is connected to the Reg5V pin (per Pin Connection diagram Fig. 1.2). In this configuration, the internal 5 V regulator is bypassed, and the driver is powered directly from the external 5 V source. This mode avoids UVLO dependency and simplifies power sequencing, making it suitable for systems where a clean, regulated 5 V rail is already available for the R2J20658NP.
R2J20658NP#G0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- -
- Channel Type:
- -
- Number of Drivers:
- -
- Gate Type:
- -
- Voltage - Supply:
- -
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- -
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R2J20658NP#G0 FAQ
1.How can I place an order for R2J20658NP#G0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R2J20658NP#G0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R2J20658NP#G0 reliable?
The price and inventory of R2J20658NP#G0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R2J20658NP#G0 is usually 5 days.
3.What payment methods are accepted for R2J20658NP#G0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R2J20658NP#G0 transactions.
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4.How is shipping managed for R2J20658NP#G0?
R2J20658NP#G0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R2J20658NP#G0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R2J20658NP#G0?
For technical support, including R2J20658NP#G0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R2J20658NP#G0 requirements.
6.How does Aetrix verify that R2J20658NP#G0 is sourced from the original manufacturer or authorized distributors?
All R2J20658NP#G0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R2J20658NP#G0 meets industry standards.
7.What is the process for return or replacement of R2J20658NP#G0?
All R2J20658NP#G0 units undergo pre-shipment inspection (PSI). If there is an issue with R2J20658NP#G0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R2J20658NP#G0 part is unused and in its original packaging.
Return procedure for R2J20658NP#G0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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