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Nexperia USA Inc. RB530S40X

Part No.:
RB530S40X
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SC-79, SOD-523
Datasheet:
AetrixRB530S40X.pdf
Description:
RB530S40/SOD523/SC-79
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,129

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Product details

Overview

RB530S40X from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, rated at 40 V reverse voltage and 300 mA average forward current, featuring 320–360 mV forward voltage at 10 mA and 25 °C, housed in an ultra-small SOD523 (SC-79) surface-mount package. It serves as a low-loss, high-speed switching element in power rail clamping and reverse polarity protection circuits.

For engineers reviewing the RB530S40X datasheet, RB530S40X pinout, RB530S40X application, or RB530S40X equivalent, key selection criteria include its low VF at low IF, sub-1 µA reverse leakage at 25 V, 20 pF junction capacitance at 1 V, thermal resistance of 450 K/W on FR4, and SC-79 footprint compatibility in space-constrained portable electronics.

Technical Context

This Schottky diode employs a planar silicon structure with a guard ring to suppress edge breakdown and improve reliability under transient stress. Its low barrier height enables fast recovery (<1 ns) and minimal stored charge, making it suitable for high-frequency switching up to several hundred MHz.

The device operates with a maximum junction temperature of 150 °C and is characterized for use on single-sided tin-plated FR4 PCBs. Thermal performance is defined by Rth(j-a) = 450 K/W in free air, and reverse leakage remains below 0.5 µA at 25 V and 25 °C with pulsed measurement conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 40 V - Maximum DC or repetitive peak reverse bias before breakdown; sets clamping headroom in 3.3 V/5 V rail protection.
Forward Voltage (VF) 320–360 mV @ 10 mA, 25 °C - Enables <100 mW conduction loss at 300 mA, critical for battery-powered efficiency.
Average Forward Current (IF(AV)) 300 mA @ δ = 0.5, 20 kHz square wave, Tsp ≤ 125 °C - Defines continuous duty-cycle handling on standard FR4 layout.
Reverse Leakage (IR) ≤0.5 µA @ VR = 25 V, pulsed, 25 °C - Ensures minimal standby power loss in always-on signal path blocking.
Junction Capacitance (Cd) 20 pF @ VR = 1 V, 1 MHz, 25 °C - Supports RF bypass and high-speed logic-level clamping without signal distortion.
Thermal Resistance (Rth(j-a)) 450 K/W - Limits junction rise to ~135 °C at 300 mA on minimal copper; requires careful thermal pad design.

Pinout & Package

RB530S40X is supplied in the SOD523 (SC-79) plastic surface-mount package: 1.2 mm × 0.8 mm × 0.6 mm body, flat lead, single-sided copper FR4 mounting. The cathode is marked by a bar on the top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Negative terminal; connects to lower-potential node (e.g., ground or output rail); marking bar aligns with this pin.
2 Anode (A) Positive terminal; connects to higher-potential source (e.g., input rail or signal line); current flows A→K during conduction.

Key Features

Feature Design Value
Guard ring integration Suppresses edge electric field concentration, enabling stable 40 V operation without premature avalanche in miniaturized geometry.
Ultra-low forward voltage VF ≤ 360 mV at 10 mA ensures <0.1 V drop in 3.3 V logic-level clamping, preserving signal integrity and margin.
Low reverse leakage IR ≤ 0.5 µA at 25 V minimizes quiescent current in always-on reverse-biased paths such as USB VBUS isolation.
SOD523 footprint 1.2 mm × 0.8 mm outline allows placement in <1.5 mm² board area-ideal for wearables, hearing aids, and compact IoT sensors.

Applications

USB Power Path Protection RF Signal Clamping

Use Scenario: Preventing backfeed from downstream USB peripherals into host power rails during hot-plug events.

IC Role / Device Role / Timing Role: Reverse-blocking diode placed between VBUS and load switch input to enforce unidirectional current flow.

Use Value: 320–360 mV VF limits voltage drop to <0.4 V at 300 mA, maintaining USB 2.0 compliance while eliminating need for active MOSFET control.

Use Scenario: Protecting RF front-end amplifier inputs from ESD transients and overvoltage during antenna switching.

IC Role / Device Role / Timing Role: Low-capacitance clamp diode shunting excess voltage to ground before reaching sensitive transistor gates.

Use Value: 20 pF Cd at 1 V avoids detuning of 2.4 GHz matching networks; sub-1 ns recovery preserves RF envelope fidelity.

Portable Battery Charging Logic-Level Translation Isolation

Use Scenario: Isolating dual-cell Li-ion battery packs from system load during charging to prevent discharge through charger IC.

IC Role / Device Role / Timing Role: Blocking diode in series with battery output to enforce charge-only current direction.

Use Value: 0.5 µA IR at 25 V reduces self-discharge to <0.1 µA per cell, extending shelf life beyond 12 months in storage.

Use Scenario: Level-shifting I²C or SPI signals between 1.8 V microcontroller and 3.3 V sensor without bidirectional contention.

IC Role / Device Role / Timing Role: Unidirectional pull-up assist diode preventing 3.3 V rail from back-driving 1.8 V domain during low-state transitions.

Use Value: 360 mV VF allows 1.8 V logic low to remain <0.4 V at sink currents up to 1 mA, satisfying VIH/VIL thresholds across voltage domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
ROHM RB520S40T2R Same 40 V VR, 300 mA IF(AV), but VF = 370–410 mV @ 10 mA; 25 pF Cd. Higher VF increases conduction loss by ~50 mW at 300 mA; higher Cd degrades >1 GHz RF clamping. Acceptable where board space permits larger thermal margin and RF bandwidth <1 GHz.
ON Semiconductor NSR0340HT1G 40 V VR, 350 mA IF(AV), VF = 350–400 mV @ 10 mA; 15 pF Cd; SOD-323 package (1.7 mm × 1.3 mm). Larger footprint (+40% area), lower Cd, but no guard ring - reduced ruggedness under repetitive surge. Preferred when lower capacitance is critical and board area allows SOD-323; avoid in high-surge industrial environments.

Compared with RB530S40X, RB520S40T2R trades lower cost for higher VF and capacitance, while NSR0340HT1G offers tighter Cd in a larger package without guard ring protection-making RB530S40X optimal for ultra-compact, high-reliability 2.4 GHz+ or battery-critical designs.

Availability

RB530S40X is available at Aetrix Electronics and suitable for USB power path protection, RF front-end clamping, portable battery charging, and logic-level translation isolation requiring stable component supply and consistent SOD523 packaging.

Supply support for RB530S40X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, mobile, and computing markets, with leadership in discrete, logic, and MOSFET technologies.

RB530S40X belongs to Nexperia's Schottky diode portfolio designed specifically for space-constrained, low-power, high-frequency applications where ultra-low VF, low IR, and robust surge immunity are mandatory.

FAQ

Is RB530S40X suitable for automotive applications?

No. RB530S40X is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed operation beyond 125 °C ambient. Nexperia explicitly states non-automotive qualification in its legal disclaimers, and the device is intended for consumer, industrial, and computing applications only.

What is the maximum allowable solder reflow peak temperature for RB530S40X?

The maximum peak reflow temperature is 260 °C for ≤10 seconds, per JEDEC J-STD-020D.3. The SOD523 package uses standard SnPb- or Pb-free compatible terminations, and the recommended reflow profile specifies ramp rate ≤3 °C/s, preheat 150–200 °C for 60–120 s, and time above liquidus (TAL) of 60–90 s at 235–245 °C for Pb-free processes.

Does RB530S40X have a specified reverse recovery time (trr)?

No trr value is published in the datasheet because Schottky diodes are majority-carrier devices with inherently negligible minority-carrier storage. Instead, Nexperia characterizes switching via forward recovery and capacitive turn-off behavior; typical transition time is <1 ns, confirmed by low QRR and absence of tail current in SPICE models.

Can RB530S40X replace RB530S30 in existing designs?

Only with verification. RB530S30 has 30 V VR and identical package/pinout, but RB530S40X's 40 V rating provides 10 V additional margin. Electrical parameters (VF, IR, Cd) are closely matched, and both share guard ring protection. However, layout thermal relief and voltage derating rules must be rechecked for the higher VR rating.

RB530S40X Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-79, SOD-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
300mA
Voltage - Forward (Vf) (Max) @ If:
600 mV @ 200 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 nA @ 25 V
Capacitance @ Vr, F:
20pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-523
Operating Temperature - Junction:
150°C

RB530S40X FAQ

1.How can I place an order for RB530S40X through Aetrix?

Please submit a Request for Quotation (RFQ) for RB530S40X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RB530S40X reliable?

The price and inventory of RB530S40X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RB530S40X is usually 5 days.

3.What payment methods are accepted for RB530S40X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RB530S40X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RB530S40X?

RB530S40X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RB530S40X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RB530S40X?

For technical support, including RB530S40X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RB530S40X requirements.

6.How does Aetrix verify that RB530S40X is sourced from the original manufacturer or authorized distributors?

All RB530S40X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RB530S40X meets industry standards.

7.What is the process for return or replacement of RB530S40X?

All RB530S40X units undergo pre-shipment inspection (PSI). If there is an issue with RB530S40X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RB530S40X part is unused and in its original packaging.

Return procedure for RB530S40X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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