Nexperia USA Inc. RB751V40-QX

Overview

RB751V40-QX from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, housed in an SOD323 (SC-76) package. It delivers 40 V repetitive peak reverse voltage, 370 mV forward voltage at 1 mA, 2 pF capacitance at 1 V/1 MHz, 0.5 µA reverse leakage at 30 V, and 120 mA forward current - enabling ultra-high-speed switching and reverse polarity protection in automotive power rails.

For engineers reviewing the RB751V40-QX datasheet, RB751V40-QX pinout, RB751V40-QX application, or RB751V40-QX equivalent, key selection criteria include low VF for efficiency-critical 12 V/24 V automotive systems, AEC-Q101 qualification, SOD323 footprint constraints, and sub-1 ns recovery for clamping transient spikes on CAN/LIN bus lines.

Technical Context

This Schottky diode uses a planar silicon structure with an integrated guard ring to enhance ESD and surge robustness without compromising low-voltage operation. Its metal-semiconductor junction enables fast switching (no minority carrier storage) and low forward conduction loss.

The device operates across –65 °C to +150 °C ambient, with thermal resistance of 450 K/W (junction-to-ambient, FR4 PCB), and is rated for 200 mA non-repetitive peak forward current under 10 ms square-wave pulses - supporting transient overvoltage suppression in engine control units and body electronics.

Key Specifications

Pinout & Package

RB751V40-QX is supplied in the SOD323 (SC-76) surface-mount plastic package: 1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, with cathode indicated by a marking bar on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0240HT1G and SD103AW-7-F, RB751V40-QX provides the lowest VF and certified automotive reliability in the smallest SMT footprint - making it optimal for new automotive electronics where space, efficiency, and qualification are jointly constrained.

Availability

RB751V40-QX is available at Aetrix Electronics and suitable for automotive reverse polarity protection, high-speed line termination, and voltage clamping requiring stable component supply across production lifecycles.

Supply support for RB751V40-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

RB751V40-QX belongs to Nexperia's AEC-Q101-qualified Schottky diode product line, engineered specifically for robust, low-loss protection and signal conditioning in automotive power and communication subsystems.

FAQ

Is RB751V40-QX suitable for 48 V automotive systems?

No. Its 40 V V_RRM rating limits use to 12 V and 24 V nominal systems. For 48 V architectures, consider Nexperia's PMEG050V50EP or similar 60 V+ Schottky diodes. Exceeding 40 V reverse voltage risks permanent breakdown per IEC 60134 limiting values.

What is the meaning of the 'W8' marking on RB751V40-QX?

The 'W8' laser marking identifies the RB751V40-QX variant per Nexperia's internal coding system and confirms compliance with AEC-Q101. It appears adjacent to the cathode bar on the top surface of the SOD323 package and is used for traceability and lot-level quality tracking.

Can RB751V40-QX replace a 1N5817 in an existing design?

Only with layout and thermal validation. While both are Schottky diodes, RB751V40-QX has lower VF (370 mV vs. ~450 mV) but lower I_F (120 mA vs. 1 A) and different package (SOD323 vs. DO-41). Direct replacement requires verifying current demand, thermal dissipation, and PCB footprint compatibility.

Does RB751V40-QX require derating at elevated ambient temperatures?

Yes. At 105 °C ambient, its usable I_F must be reduced to ~75 mA based on R_th(j-a) = 450 K/W and T_j(max) = 150 °C. Derating curves are provided in Figure 1 of the datasheet; full 120 mA rating applies only ≤25 °C ambient on standard FR4.