NXP Semiconductors RHRG5060

Overview

RHRG5060 from ON Semiconductor is a hyperfast recovery diode with soft recovery characteristics, rated for 50 A average forward current and 600 V peak repetitive reverse voltage, featuring 50 ns reverse recovery time at 50 A and silicon nitride passivated ion-implanted epitaxial planar construction-designed for freewheeling/clamping in high-frequency switching power supplies.

For engineers reviewing the RHRG5060 datasheet, RHRG5060 pinout, RHRG5060 application, or RHRG5060 equivalent, key selection criteria include soft-recovery trr performance, avalanche energy rating (40 mJ), low Qrr (65 nC), thermal resistance (1.0 °C/W), and TO-247-2L package compatibility with high-power PCB layouts.

Technical Context

The RHRG5060 employs an ion-implanted epitaxial planar structure with silicon nitride passivation to achieve hyperfast soft recovery-its ta = 25 ns and tb = 20 ns at 25°C yield trr = 45–50 ns under IF = 50 A and dIF/dt = 100 A/µs conditions. This architecture minimizes stored charge (Qrr = 65 nC) and suppresses voltage ringing during turn-off.

It is avalanche-rated for 40 mJ per pulse (per Figures 10–11), operates across –65°C to +175°C junction temperature range, and maintains stable VF ≤ 2.1 V at TC = 25°C while supporting nonrepetitive surge currents up to 500 A (half-wave, 60 Hz).

Key Specifications

Pinout & Package

Supplied in JEDEC-standard TO-247-2L molded package with isolated metal tab (cathode-connected case). The package features low thermal resistance and mechanical robustness for industrial power modules and open-frame PSUs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hyperfast diode applications.

Compared with STTH5006D and MBR5060CT, the RHRG5060 uniquely balances 600 V blocking, 50 ns soft recovery, and 40 mJ avalanche ruggedness-making it irreplaceable in high-bus-voltage IGBT snubbing and high-frequency PFC where both speed and ruggedness are mandatory.

Availability

RHRG5060 is available at Aetrix Electronics and suitable for switching power supplies, motor drive inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for RHRG5060 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor solutions for automotive, industrial, cloud computing, and consumer electronics.

The RHRG5060 belongs to ON Semiconductor's high-voltage hyperfast diode product line, engineered specifically for ruggedized freewheeling and clamping in high-frequency, high-power switching circuits where soft recovery and avalanche tolerance are critical.

FAQ

What is the maximum junction temperature rating for the RHRG5060?

The RHRG5060 has a maximum junction temperature (TJ) rating of +175°C, verified per Absolute Maximum Ratings table. This allows operation in high-ambient environments such as enclosed industrial power supplies and motor drive cabinets. Derating begins at TC = 93°C for IF(AV) = 50 A, and thermal design must maintain RθJC = 1.0 °C/W path to heatsink to avoid exceeding TJ limit during transient surges.

Does the RHRG5060 have avalanche energy rating, and how is it tested?

Yes, the RHRG5060 is rated for 40 mJ of single-pulse avalanche energy (EAVL), measured per Figure 10 test circuit using L = 40 mH, IMAX = 1.4 A, and defined by EAVL = ½·L·I²·[VR(AVL)/(VR(AVL) − VDD)]. This rating confirms its ability to absorb inductive turn-off energy without failure-critical when used as a clamping diode across IGBTs in motor drives and UPS systems.

What is the reverse recovery time (trr) specification for the RHRG5060 under typical operating conditions?

The RHRG5060 specifies trr = 45–50 ns at IF = 50 A, TC = 25°C, and dIF/dt = 100 A/µs, with ta = 25 ns and tb = 20 ns. This soft-recovery profile is confirmed in Figure 3 and enables clean commutation in >100 kHz converters. At elevated temperatures (e.g., TC = 175°C), trr increases to ~125 ns, requiring layout and gate-drive tuning for timing margin.

Is the RHRG5060 RoHS compliant and lead-free?

Yes, the RHRG5060 is RoHS compliant and lead-free, as explicitly stated in the Features section of its datasheet. It meets EU Directive 2011/65/EU and subsequent amendments, with no exemptions applied. The TO-247-2L package uses matte tin-plated leads and lead-free molding compound, certified per ON Semiconductor's material declarations.

How does the RHRG5060 differ from standard ultrafast diodes in terms of recovery behavior?

The RHRG5060 delivers half the recovery time of conventional ultrafast diodes while maintaining soft recovery-its ta/tb ratio and gradual IRM decay prevent voltage snap-back and ringing. Standard ultrafast diodes often exhibit abrupt turn-off with high di/dt-induced overshoot; the RHRG5060's ion-implanted epitaxial planar structure and silicon nitride passivation ensure controlled minority-carrier recombination, directly reducing EMI filter burden and improving system EMC performance.