Diodes Incorporated RS1B-13-F

Overview

RS1B-13-F from Diodes Incorporated is a surface-mount fast recovery rectifier diode rated for 100 V peak repetitive reverse voltage, 1.0 A average forward current, and 30 A non-repetitive surge current, with 150 ns reverse recovery time and 1.3 V forward voltage drop at 1.0 A - used in AC/DC input stage rectification for compact power adapters and LED drivers.

For engineers reviewing the RS1B-13-F datasheet, RS1B-13-F pinout, RS1B-13-F application, or RS1B-13-F equivalent, key selection criteria include fast recovery performance (t_RR = 150 ns), low thermal resistance (R_θJT = 20 °C/W), RoHS-compliant lead-free finish, and SMB package compatibility with automated SMT assembly.

Technical Context

This device operates as a unidirectional silicon PN junction rectifier optimized for high-frequency switching power supplies. Its glass-passivated die construction ensures stable reverse leakage (<5 µA @ 25°C) and robust surge tolerance (30 A, 8.3 ms half-sine).

The SMB package enables efficient heat transfer to PCB copper, supporting continuous operation up to +120°C terminal temperature. Reverse recovery is characterized under standardized conditions (I_F = 0.5 A, I_R = 1.0 A, I_RR = 0.25 A), confirming suitability for 50–100 kHz SMPS front-end designs.

Key Specifications

Pinout & Package

SMB (DO-214AA) surface-mount package: molded plastic case (UL 94V-0), cathode band polarity marking, matte tin–annealed copper alloy terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH1R04S and MUR110E, RS1B-13-F uniquely balances 100 V rating, 150 ns recovery, and full 1.0 A current capability in the larger SMB package - optimizing thermal margin and manufacturability for mid-power industrial and consumer adapters.

Availability

RS1B-13-F is available at Aetrix Electronics and suitable for AC/DC power adapters, LED driver input rectification, and industrial control power supplies requiring stable component supply and long-term production continuity.

Supply support for RS1B-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

RS1B-13-F belongs to the RS1x/B fast recovery rectifier product line, engineered specifically for high-efficiency, high-reliability AC/DC front-end conversion in compact, automated SMT power supplies.

FAQ

What is the maximum operating temperature for RS1B-13-F?

The RS1B-13-F has an operating junction temperature range of –65°C to +150°C and is rated for 1.0 A average forward current at a terminal temperature of +120°C. Derating begins above this point per Figure 1 in DS15002, with zero current allowed at +150°C terminal temperature.

Is RS1B-13-F suitable for use in synchronous rectification circuits?

No - RS1B-13-F is a passive silicon PN junction diode, not a MOSFET-based synchronous rectifier. It can serve as the freewheeling or output rectifier in non-synchronous topologies, but cannot replace active gate-driven devices in synchronous designs due to lack of control terminals and inherent forward voltage limitation.

Does RS1B-13-F require special PCB layout considerations for thermal performance?

Yes - optimal thermal performance requires minimum 25 mm² of 1-oz copper connected directly to both anode and cathode pads, per Diodes' suggested SMB pad layout (C = 4.30 mm, G = 1.80 mm, X = 2.50 mm). Insufficient copper area raises R_θJA and risks exceeding +120°C terminal temperature at full load.

How does the 150 ns reverse recovery time impact EMI in switch-mode power supplies?

A 150 ns t_RR limits reverse recovery charge (Q_rr) to approximately 12–15 nC, reducing high-frequency ringing amplitude on the switching node. This lowers conducted EMI in the 30–100 MHz band and decreases required common-mode choke inductance by ~25% compared to 500 ns general-purpose rectifiers.