Taiwan Semiconductor Corporation RS2DALH

Overview

RS2DALH from Taiwan Semiconductor is a 2 A, 200 V fast recovery surface-mount rectifier diode in a Thin SMA package, featuring 150 ns reverse recovery time, 1.01 V forward voltage at 2 A/25°C, and AEC-Q101 qualification for automotive use. It serves as a freewheeling or snubber diode in DC/DC converters where low conduction loss and fast switching are required.

For engineers reviewing the RS2DALH datasheet, RS2DALH pinout, RS2DALH application, or RS2DALH equivalent, key selection criteria include its 200 V repetitive peak reverse voltage, 50 A surge current rating, 175 °C maximum junction temperature, glass-passivated junction, and J-STD-020 Level 1 moisture sensitivity - all critical for high-reliability automotive and industrial power designs.

Technical Context

This single-die, unidirectional fast recovery rectifier uses a glass-passivated PN junction to achieve stable reverse leakage (<1 µA at 25°C) and controlled reverse recovery behavior (trr ≤ 150 ns). Its thermal design targets low R_θJL (16 °C/W) and R_θJA (73 °C/W) when mounted on a 5 mm × 5 mm copper pad.

The device operates across –55 °C to +175 °C junction temperature range and supports automated SMT placement with matte tin-plated leads compliant to J-STD-002. Polarity is marked by a cathode band on the Thin SMA case per JEDEC DO-221AC outline.

Key Specifications

Pinout & Package

Package: Thin SMA (JEDEC DO-221AC variation), low-profile surface-mount package with cathode indicated by band marking; dimensions: 4.40 × 2.70 × 1.20 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH2R02 and ES2D, RS2DALH uniquely combines AEC-Q101 qualification, Thin SMA low-profile packaging, and 150 ns t_rr - making it optimal for space-constrained automotive and industrial SMT power stages where reliability and thermal efficiency must coexist.

Availability

RS2DALH is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial snubber circuits, and consumer power adapters requiring stable component supply, consistent AEC-Q101 compliance, and reliable SMT manufacturability.

Supply support for RS2DALH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The RS2DALH belongs to TSC's RS2xALH fast recovery rectifier family, engineered specifically for high-efficiency, high-reliability SMT power conversion in automotive and industrial environments where thermal robustness and AEC-Q101 validation are mandatory.

FAQ

What is the maximum junction temperature rating for RS2DALH?

The RS2DALH has a maximum junction temperature (T_J) rating of +175 °C, enabling reliable operation in under-hood automotive environments and high-temperature industrial enclosures. This specification is validated per AEC-Q101 stress testing and confirmed in the official Taiwan Semiconductor datasheet revision C2304. The RS2DALH maintains stable electrical parameters across its full –55 °C to +175 °C junction range.

Is RS2DALH AEC-Q101 qualified?

Yes, RS2DALH is explicitly AEC-Q101 qualified per the Taiwan Semiconductor datasheet (Version C2304). This qualification covers temperature cycling, high-temperature storage life, unbiased highly accelerated stress test, and electrostatic discharge testing - confirming suitability for automotive power electronics such as ECUs and ADAS subsystems. The RS2DALH carries this qualification as a core feature, not as an optional variant.

What is the reverse recovery time (t_rr) of RS2DALH and how is it measured?

The RS2DALH has a reverse recovery time (t_rr) of ≤150 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, per the official Taiwan Semiconductor datasheet. This value reflects the diode's speed in transitioning from conduction to blocking state, directly impacting switching loss in high-frequency DC/DC converters. The RS2DALH's t_rr is slower than ultrafast types (e.g., 35 ns) but optimized for balance between speed, ruggedness, and forward voltage.

What package type does RS2DALH use and what are its key mechanical features?

RS2DALH uses the Thin SMA package (JEDEC DO-221AC variation), measuring 4.40 × 2.70 × 1.20 mm. Key mechanical features include a glass-passivated chip junction, matte tin-plated leads compliant with J-STD-002, cathode polarity marked by a band, and J-STD-020 Level 1 moisture sensitivity. The RS2DALH's low-profile design supports dense PCB layouts and automated placement without tombstoning risk.

What is the forward voltage (V_F) of RS2DALH at rated current and temperature?

The RS2DALH exhibits a forward voltage (V_F) of 1.01 V at I_F = 2 A and T_J = 25 °C, and 0.88 V at I_F = 2 A and T_J = 125 °C, per the Taiwan Semiconductor datasheet. This temperature-dependent reduction reflects the negative thermal coefficient of silicon PN junctions. The RS2DALH's V_F is optimized for low conduction loss while maintaining fast recovery characteristics - critical for efficiency in 200–500 kHz power stages.