Microchip Technology S16-4148/TR7

Overview

S16-4148/TR7 from Microsemi (now Microchip Technology) is an 8-diode switching array in a 16-pin SOIC surface-mount package, rated for 75 V working peak reverse voltage, 400 mA continuous forward current per diode, and 1500 mW total package power dissipation, used in high-density signal routing and protection circuits in telecom line cards and industrial I/O modules.

For engineers reviewing the S16-4148/TR7 datasheet, S16-4148/TR7 pinout, S16-4148/TR7 application, or S16-4148/TR7 equivalent, key selection criteria include VRWM (75 V), IF (400 mA/diode), trr (max 5.0 ns), VF at 100 mA (1.20 V max), and RoHS-compliant matte tin terminations with UL 94V-0 molding compound.

Technical Context

This monolithic silicon diode array integrates eight independent switching diodes on a single die, configured as isolated anode-cathode pairs with no internal interconnection-each diode operates independently. The device supports high-speed switching with reverse recovery time ≤5.0 ns and low forward voltage drop (≤1.20 V @ 100 mA), enabling efficient clamping and steering in multi-channel data interface protection.

Rated for operation from –55 °C to +150 °C and qualified per MIL-STD-750 test methods, the S16-4148/TR7 uses molded SOIC-16 packaging with pin 1 identified by a dot, tape-and-reel delivery (2500 pcs/reel), and annealed matte tin terminals compliant with J-STD-020 moisture sensitivity level 1.

Key Specifications

Pinout & Package

Package: 16-pin SOIC (Small Outline Integrated Circuit), molded plastic body, 0.398″ × 0.244″ footprint (10.10 mm × 6.19 mm), pin 1 marked by dot, RoHS-compliant matte tin terminations, UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode array applications.

Compared with S16-4148/TR7, NSR20F40MX offers higher speed but half the channel count and voltage rating, while VS-8EDL06-M3 matches pinout and channel count but sacrifices 15 V VRWM headroom and 200 mW power margin-critical for sustained surge handling in industrial environments.

Availability

S16-4148/TR7 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and automotive electronics requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing traceability.

Supply support for S16-4148/TR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened components, and precision timing devices.

The S16-4148/TR7 belongs to Microsemi's discrete diode array product line, engineered for high-density, high-reliability signal routing and transient protection in mission-critical communications and control systems.

FAQ

What is the maximum reverse recovery time (trr) specification for S16-4148/TR7?

The S16-4148/TR7 has a maximum reverse recovery time of 5.0 nanoseconds at 25 °C, measured under standard test conditions (IF = 100 mA, IR = 100 mA, di/dt = 100 A/µs). This value ensures compatibility with high-speed digital interfaces such as RS-422 and LVDS, where fast switching transitions must be preserved without distortion. The S16-4148/TR7 maintains this trr performance across its full operating temperature range.

Does S16-4148/TR7 support RoHS compliance, and how is it indicated in the part marking?

Yes, the S16-4148/TR7 is RoHS compliant, confirmed by the "e3" suffix in its full orderable designation and verified via annealed matte tin terminations per JESD22-A112. The device carries the Microsemi logo, part number "S16-4148", and date code on the package top surface. RoHS compliance is integral to the S16-4148/TR7 manufacturing process and documented in Microchip's material declarations.

How many independent diodes does the S16-4148/TR7 contain, and how are they electrically isolated?

The S16-4148/TR7 contains eight fully independent silicon switching diodes, each with dedicated anode (pins 1–8) and cathode (pins 9–16) terminals. There are no internal electrical connections between diodes-no shared cathodes, anodes, or substrate ties-ensuring complete channel-to-channel isolation for simultaneous multi-signal routing or protection tasks. This architecture is explicitly defined in the S16-4148/TR7 circuit diagram and mechanical drawings.

What is the power dissipation limit for S16-4148/TR7, and how is it distributed across the diodes?

The S16-4148/TR7 has a total package power dissipation limit of 1500 mW at 25 °C, derated linearly above 25 °C per the thermal resistance curve. Since all eight diodes share the same die and package, this rating applies collectively-not per diode-and must account for cumulative heating from simultaneous conduction. The S16-4148/TR7 datasheet specifies junction-to-ambient thermal resistance (RθJA) of 83 °C/W, confirming thermal design margins for PCB layouts with standard copper pour.

Is S16-4148/TR7 pin-compatible with S16-4150/TR7, and what are the key functional differences?

No, the S16-4148/TR7 and S16-4150/TR7 are not functionally interchangeable despite identical SOIC-16 packaging and pinout. The S16-4148/TR7 is rated for 75 V VRWM and 90 V VBR, whereas the S16-4150/TR7 is rated for 50 V VRWM and 75 V VBR. Forward voltage characteristics also differ significantly: the S16-4148/TR7 specifies VF ≤1.20 V @ 100 mA, while the S16-4150/TR7 specifies VF = 0.82–0.92 V @ 100 mA. These differences make direct substitution unsafe without circuit revalidation.