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Microchip Technology S16-4150E3/TR7
- Part No.:
- S16-4150E3/TR7
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
S16-4150E3/TR7.pdf
- Description:
- DIODE ARRAY GP 50V 400MA 16-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,198
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Product details
Overview
S16-4150E3/TR7 from Microsemi (now Microchip Technology) is an 8-diode switching array in a 16-pin SOIC surface-mount package, rated for 50 V peak reverse voltage, 400 mA continuous forward current per diode, and 1500 mW total power dissipation, used in high-density signal routing and ESD protection circuits in industrial control modules.
For engineers reviewing the S16-4150E3/TR7 datasheet, S16-4150E3/TR7 pinout, S16-4150E3/TR7 application, or S16-4150E3/TR7 equivalent, key selection criteria include working peak reverse voltage (50 V), forward voltage at 100 mA (0.82–0.92 V), reverse leakage at 150 °C (100 µA), junction capacitance at 0 V (50 pF), and fast recovery time (4.0 ns).
Technical Context
This monolithic 8-diode array integrates eight independent silicon switching diodes on a single die, configured as isolated anode-cathode pairs with no internal interconnection-each diode operates independently. It supports high-speed signal routing and transient suppression in multi-channel analog/digital I/O interfaces where discrete diode placement is space-constrained.
The device uses planar epitaxial construction with gold-doped lifetime control to achieve consistent fast recovery (trr ≤ 4.0 ns) and low forward voltage (VF ≤ 0.92 V @ 100 mA) across all eight elements, while maintaining tight parameter matching between channels under thermal stress up to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum continuous reverse voltage each diode withstands without breakdown; defines safe operating range in clamping or blocking applications. |
| IF (continuous) | 400 mA per diode - Maximum steady-state forward current sustainable per channel without thermal derating at TA = 25 °C. |
| trr | 4.0 ns - Measured reverse recovery time at IF = 100 mA, VR = 25 V, di/dt = 100 A/µs; enables use in >100 MHz signal switching. |
| VF @ 100 mA | 0.82–0.92 V - Forward voltage range confirming low conduction loss and minimal self-heating during sustained I/O line switching. |
| CJ @ 0 V | 50 pF - Junction capacitance per diode at zero bias; critical for preserving signal integrity in high-frequency data lines (e.g., RS-485, CAN FD stubs). |
| Operating Temp | −55 °C to +150 °C - Full military-grade temperature range validated for engine control units and downhole instrumentation. |
Pinout & Package
Molded 16-pin SOIC package (JEDEC MS-013AC), 10.10 mm × 4.01 mm × 1.75 mm body, RoHS-compliant matte tin terminations, tape-and-reel packaging (TR7 = 7-inch reel, 2500 pcs), pin #1 marked by dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–8 | Anode of Diode 1–8 | Independent anode inputs; each connects to separate signal line requiring clamping or steering. |
| 9–16 | Cathode of Diode 1–8 | Independent cathodes; typically tied to common reference (e.g., VCC, GND, or clamp rail) per channel. |
Key Features
| Feature | Design Value |
|---|---|
| 8 isolated diodes | Enables parallel protection or routing of eight independent signals without crosstalk or shared thermal path. |
| Fast recovery (4.0 ns) | Supports clean edge transitions in digital I/O, encoder feedback, and pulse-width modulated sensor interfaces. |
| Low VF (0.82–0.92 V @ 100 mA) | Reduces voltage drop and power loss in battery-powered or low-voltage logic-level translation paths. |
| High-temperature operation (+150 °C) | Validated for under-hood automotive ECUs and industrial motor drive I/O modules without derating. |
Applications
| Industrial PLC I/O Modules | Automotive Body Control Units |
|---|---|
Use Scenario: Protecting 8-channel analog input multiplexers from field-induced transients in factory automation cabinets. IC Role / Device Role / Timing Role: Discrete transient voltage suppressor per channel, placed directly at connector entry point before signal conditioning. Use Value: Prevents latch-up in downstream op-amps and ADCs by clamping spikes to <1.2 V while adding only 50 pF loading per channel. | Use Scenario: Steering and level-shifting 8 CAN FD or LIN bus signals between microcontroller GPIO and external harness connectors. IC Role / Device Role / Timing Role: Bidirectional signal diode for voltage translation and fault isolation in distributed vehicle networks. Use Value: Enables 4.0 ns switching with matched VF across all 8 channels, ensuring deterministic timing in 5 Mbps CAN FD arbitration phases. |
| Medical Imaging Sensor Arrays | Test Equipment Signal Multiplexers |
Use Scenario: Isolating 8 photodiode bias lines in portable ultrasound front-end ASICs to prevent cross-talk during pulsed excitation. IC Role / Device Role / Timing Role: Reverse-biased blocking diode to decouple bias rails during high-slew-rate transmit pulses. Use Value: 50 V VRWM and 100 µA IR at 150 °C ensure stable dark-current rejection even inside thermally insulated probe housings. | Use Scenario: Routing calibration reference voltages across 8 DUT channels in automated test equipment without mutual interference. IC Role / Device Role / Timing Role: Low-capacitance forward-biased switch enabling sub-nanosecond channel selection settling. Use Value: 50 pF junction capacitance and 4.0 ns trr allow <100 ps jitter accumulation across 8-path analog mux trees. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F40NXT5G | Single 20 V, 400 mA Schottky diode in SOD-123; not an 8-element array. | Requires 8 discrete placements; lacks integrated channel matching and thermal coupling. | Use only when board area permits discrete layout and channel-to-channel VF matching is non-critical. |
| Vishay VS-8EDL06-M3/45 | 8-diode array in SOIC-16, but rated for 60 V VRWM and 200 mA IF per diode; VF higher (0.95 V @ 100 mA). | Lower current rating limits use in sustained 400 mA I/O drivers; higher VRWM suits 48 V industrial buses. | Select when system reverse voltage exceeds 50 V but average forward current stays below 200 mA per channel. |
Compared with S16-4150E3/TR7, the NSR20F40NXT5G sacrifices integration and matching for lower cost per diode, while the VS-8EDL06-M3/45 trades current capacity for higher voltage headroom-neither offers identical 50 V / 400 mA / 4.0 ns performance in a single SOIC-16 footprint.
Availability
S16-4150E3/TR7 is available at Aetrix Electronics and suitable for industrial PLC I/O modules, automotive body control units, and medical imaging sensor arrays requiring stable component supply across extended product lifecycles.
Supply support for S16-4150E3/TR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The S16-4150E3/TR7 belongs to Microsemi's legacy discrete diode array product line, engineered specifically for space-constrained, high-channel-count ESD protection and signal routing in harsh-environment electronics.
FAQ
What is the maximum continuous forward current rating per diode in the S16-4150E3/TR7?
The S16-4150E3/TR7 is rated for 400 mA continuous forward current per diode at TA = 25 °C. Derating is required above 25 °C per the thermal resistance curve in the original MSC0881.PDF datasheet. This rating ensures reliable operation in sustained I/O line switching without thermal runaway across all eight channels simultaneously.
Does the S16-4150E3/TR7 have pin-to-pin compatibility with the S16-4148E3/TR7?
No, the S16-4150E3/TR7 is not pin-to-pin compatible with the S16-4148E3/TR7 in terms of electrical ratings, though both share the same SOIC-16 mechanical footprint and pinout configuration. The S16-4148E3/TR7 has a higher VRWM (75 V) but lower VF and different trr (5.0 ns), making direct substitution unsafe without circuit revalidation.
What does the "TR7" suffix indicate in S16-4150E3/TR7?
The "TR7" suffix in S16-4150E3/TR7 specifies tape-and-reel packaging on a 7-inch reel containing 2,500 units, compliant with EIA-481-B standards. It replaces the "TR" designation in the original datasheet and confirms RoHS compliance via the "E3" suffix, distinguishing it from legacy tin-lead versions.
Can the S16-4150E3/TR7 be used in automotive applications requiring AEC-Q101 qualification?
The S16-4150E3/TR7 was not submitted for AEC-Q101 stress testing and carries no official automotive qualification. While its −55 °C to +150 °C operating range meets under-hood thermal requirements, design-in for automotive safety-critical systems requires additional component-level validation per ISO/TS 16949 processes.
What is the typical junction capacitance of the S16-4150E3/TR7 at zero bias?
The typical junction capacitance of the S16-4150E3/TR7 is 50 pF per diode measured at 0 V reverse bias and 1 MHz. This value is confirmed in the Electrical Characteristics table of the MSC0881.PDF datasheet and remains stable across temperature, supporting high-fidelity signal routing in multi-channel data acquisition systems.
S16-4150E3/TR7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 8 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 400mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
S16-4150E3/TR7 FAQ
1.How can I place an order for S16-4150E3/TR7 through Aetrix?
Please submit a Request for Quotation (RFQ) for S16-4150E3/TR7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S16-4150E3/TR7 reliable?
The price and inventory of S16-4150E3/TR7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S16-4150E3/TR7 is usually 5 days.
3.What payment methods are accepted for S16-4150E3/TR7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S16-4150E3/TR7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S16-4150E3/TR7?
S16-4150E3/TR7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S16-4150E3/TR7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S16-4150E3/TR7?
For technical support, including S16-4150E3/TR7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S16-4150E3/TR7 requirements.
6.How does Aetrix verify that S16-4150E3/TR7 is sourced from the original manufacturer or authorized distributors?
All S16-4150E3/TR7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S16-4150E3/TR7 meets industry standards.
7.What is the process for return or replacement of S16-4150E3/TR7?
All S16-4150E3/TR7 units undergo pre-shipment inspection (PSI). If there is an issue with S16-4150E3/TR7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S16-4150E3/TR7 part is unused and in its original packaging.
Return procedure for S16-4150E3/TR7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S16-4150E3/TR7 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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