Diodes Incorporated S1A-13-F

Overview

S1A-13-F from Diodes Incorporated is a 1.0A, 50V peak repetitive reverse voltage glass passivated surface-mount rectifier diode in SMA package, with 1.1V max forward voltage at 1.0A, 30A non-repetitive surge rating, and 1.8–3.0μs reverse recovery time-used in AC/DC input stage rectification for compact power adapters and LED drivers.

For engineers reviewing the S1A-13-F datasheet, S1A-13-F pinout, S1A-13-F application, or S1A-13-F equivalent, key selection criteria include its 50V VRRM rating, thermal resistance of 30°C/W, RoHS-compliant matte tin plating, and suitability for automated SMT assembly on consumer-grade PCBs.

Technical Context

This device operates as a unidirectional silicon junction rectifier optimized for high-reliability, low-cost AC-to-DC conversion in space-constrained applications. Its glass passivated die construction ensures stable leakage performance across -65°C to +150°C operating range and withstands 8.3ms half-sine surge currents up to 30A.

The diode exhibits fast recovery (trr = 1.8–3.0μs) and low junction capacitance (CT = 10pF @ 1MHz, 4V), enabling efficient operation in 50/60Hz line-frequency rectification without significant switching loss or EMI generation.

Key Specifications

Pinout & Package

Package: SMA (DO-214AC), molded plastic case with UL 94V-0 flammability rating, cathode band polarity marking, and matte tin-plated terminals solderable per MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar general-purpose rectifier applications.

Compared with M1A and 1N4001-T, S1A-13-F offers superior thermal performance (30°C/W vs. ~50°C/W typical for DO-41), faster recovery, and guaranteed lead-free/Green compliance-making it optimal for modern SMT-based, thermally constrained, and export-targeted designs.

Availability

S1A-13-F is available at Aetrix Electronics and suitable for AC/DC wall adapters, LED driver input stages, and industrial control power supplies requiring stable component supply, consistent parametric binning, and full traceability from Diodes Incorporated's qualified wafer fab.

Supply support for S1A-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, testing, and wafer fabrication facilities across Asia and the US.

S1A-13-F belongs to the S1x series of general-purpose glass-passivated rectifiers, engineered for cost-sensitive, high-volume power conversion applications where reliability, manufacturability, and regulatory compliance are critical.

FAQ

What is the maximum junction temperature for continuous operation of S1A-13-F?

The S1A-13-F has an operating junction temperature range of -65°C to +150°C. For continuous 1.0A operation, terminal temperature must be maintained at ≤100°C per the derating curve-achievable with ≥5.0 mm² copper pad area acting as heatsink, yielding ≤30°C junction-to-terminal rise at rated current.

Is S1A-13-F suitable for use in a full-wave bridge configuration?

Yes-S1A-13-F is commonly used as one leg in discrete full-wave bridge rectifiers. Its 50V VRRM rating supports up to 35V RMS input; four units can form a complete bridge for 24VAC transformer outputs. Polarity is clearly marked by cathode band, ensuring correct orientation during placement.

Does S1A-13-F require pre-baking before reflow soldering?

No-S1A-13-F has Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and placed directly into standard Pb-free reflow profiles without baking. This eliminates process steps and reduces risk of moisture-related popcorning.

How does the 10pF junction capacitance affect EMI in line-frequency applications?

At 50/60Hz, the 10pF capacitance has negligible impact on EMI. However, during fast di/dt events (e.g., transformer leakage inrush), it forms resonant paths with stray inductance-keeping CT low helps suppress high-frequency ringing above 10MHz, easing compliance with CISPR-22 Class B conducted emissions limits.