Taiwan Semiconductor Corporation S1GB

Overview

S1GB from Taiwan Semiconductor is a 1 A, 400 V repetitive peak reverse voltage (V_RRM) surface-mount standard rectifier diode in DO-214AA (SMB) package, featuring 1.1 V max forward voltage at 1 A and 30 A surge capability - used in AC/DC front-end rectification for compact switch-mode power supplies.

For engineers reviewing the S1GB datasheet, S1GB pinout, S1GB application, or S1GB equivalent, key selection criteria include its 400 V V_RRM, 1.1 V V_F at rated current, DO-214AA thermal resistance of 30 °C/W, moisture sensitivity level 1 compliance, and suitability for automated SMT assembly in space-constrained power adapters and LED drivers.

Technical Context

The S1GB operates as a single-die, unidirectional silicon junction rectifier with glass-passivated chip construction, enabling stable performance across -55°C to +150°C junction temperature range. Its 30 A non-repetitive surge rating (8.3 ms half-sine) supports transient line events in offline converters.

Designed for high-efficiency, low-profile AC/DC conversion, the device delivers 5 µA max reverse leakage at 25°C and 50 µA at 125°C under rated 400 V reverse bias, with 12 pF junction capacitance at 4 V - minimizing switching losses and EMI in 50–100 kHz SMPS topologies.

Key Specifications

Pinout & Package

DO-214AA (SMB) surface-mount package with cathode-indicating band; matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance; UL 94V-0 molding compound; 0.090 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH1R04 and SB140, the S1GB offers optimal balance of 400 V blocking, DO-214AA footprint compatibility, and industrial-grade surge robustness - making it preferred for universal-input AC/DC designs where layout continuity and safety margin are prioritized over marginal V_F reduction or footprint shrinkage.

Availability

S1GB is available at Aetrix Electronics and suitable for switch-mode power supplies, LED lighting drivers, and USB-C power adapters requiring stable component supply, consistent parametric performance, and full traceability across production batches.

Supply support for S1GB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated Taiwanese semiconductor manufacturer specializing in discrete power devices, including rectifiers, TVS diodes, and MOSFETs for industrial and consumer markets.

The S1GB belongs to TSC's S1x series of standard rectifiers engineered for cost-effective, high-reliability AC/DC conversion in space-constrained, high-volume power supply applications.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the S1GB?

The S1GB has a V_RRM of 400 V, as confirmed in the Absolute Maximum Ratings table of Taiwan Semiconductor's I2102 datasheet. This value defines the highest continuous reverse voltage the diode can block without breakdown under normal operating conditions and is critical for selecting appropriate safety margins in 115/230 VAC input designs. The S1GB is part of the S1AB–S1MB family where "G" explicitly denotes the 400 V rating.

Does the S1GB meet RoHS and halogen-free requirements?

Yes, the S1GB is RoHS compliant and halogen-free per IEC 61249-2-21, as stated in the FEATURES section of the official documentation. These compliance attributes are verified for the DO-214AA (SMB) packaged S1GB and apply to all units shipped under ordering code S1GB. This makes the S1GB suitable for export-controlled and environmentally regulated end equipment.

What is the forward voltage (V_F) specification for the S1GB at rated current?

The S1GB exhibits a maximum forward voltage of 1.1 V at I_F = 1 A and T_J = 25°C, per the Electrical Specifications table. This parameter is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. The actual V_F increases with junction temperature and current, and the S1GB datasheet provides forward characteristic curves to support thermal modeling in real-world S1GB applications.

Is the S1GB suitable for automated SMT assembly?

Yes, the S1GB is explicitly designed for automated placement, as noted in its FEATURES list. Its DO-214AA (SMB) package, matte tin-plated leads (J-STD-002 compliant), and MSL Level 1 rating eliminate pre-bake requirements and ensure compatibility with standard reflow profiles. The S1GB marking code "S1GB" and cathode band also support optical recognition in high-speed pick-and-place systems.

What is the junction-to-lead thermal resistance (R_θJL) of the S1GB?

The S1GB has a typical junction-to-lead thermal resistance of 30 °C/W, specified in the Thermal Performance section. This value reflects heat transfer efficiency from the silicon die to the lead frame under steady-state conduction and is essential for calculating temperature rise in lead-mounted thermal paths. It applies specifically to the DO-214AA packaged S1GB and is validated per JEDEC test methods.