Diodes Incorporated S1N-13-F

Overview

S1N-13-F from Diodes Incorporated is a 1.0A, 1200V glass passivated surface-mount rectifier diode in SMA package, featuring low forward voltage (0.94V typ @ 1A), 30A non-repetitive surge capability, and 6pF typical junction capacitance - deployed in AC/DC front-end rectification for industrial power supplies.

For engineers reviewing the S1N-13-F datasheet, S1N-13-F pinout, S1N-13-F application, or S1N-13-F equivalent, key selection criteria include peak reverse voltage rating, thermal resistance (50°C/W), surge robustness (30A IFSM), and RoHS-compliant lead-free plating for automated assembly compatibility.

Technical Context

This discrete silicon rectifier operates in single-phase, half-wave configurations with resistive or inductive loads at 60Hz; capacitive loads require 20% current derating. Its glass-passivated die ensures stable reverse breakdown and long-term reliability under thermal cycling.

The device exhibits strong temperature-dependent leakage behavior (IR ≤ 5.0μA @ 25°C, ≤100μA @ 125°C) and predictable forward conduction (VF ≤ 1.1V @ 1A), enabling accurate thermal modeling in high-voltage DC bus designs up to 840V RMS.

Key Specifications

Pinout & Package

Package: SMA (Surface Mount Adapter), molded plastic case per UL 94V-0, cathode identified by band or notch on top surface, matte tin-plated terminals solderable per MIL-STD-202 Method 208.

Key Features

Applications

Availability

S1N-13-F is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, LED driver input rectification, and high-voltage DC link protection requiring stable component supply and long-term manufacturing continuity.

Supply support for S1N-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The S1N series belongs to Diodes' high-voltage rectifier product line, engineered for robustness in mains-connected applications where surge immunity, thermal stability, and regulatory compliance are critical.

FAQ

What is the maximum operating temperature for S1N-13-F?

The S1N-13-F has an operating junction temperature range of –55°C to +150°C. Its rated average forward current (1.0A) is specified at a terminal temperature (TT) of +100°C. Derating is required above that temperature per Figure 1 in the datasheet, with thermal resistance RθJA = 50°C/W measured at 9.5mm lead length.

Is S1N-13-F compatible with lead-free reflow processes?

Yes. S1N-13-F features matte tin-plated terminals qualified per MIL-STD-202, Method 208, and is rated for standard Pb-free reflow profiles (peak temperature up to 260°C). Its Moisture Sensitivity Level is 1, eliminating pre-bake requirements before SMT assembly.

How does S1N-13-F compare to 1N4007 in high-voltage applications?

S1N-13-F offers 1200V VRRM (vs. 1N4007's 1000V), lower VF (0.94V typ vs. ~1.1V), and superior surge rating (30A vs. 30A but with higher I²t of 3.74 A²s). It also uses glass passivation instead of epoxy, improving humidity resistance and long-term parameter stability.

Can S1N-13-F be used in full-wave bridge configurations?

Yes - S1N-13-F is commonly used as one quadrant in discrete full-wave bridge rectifiers. Its SMA package allows dense layout, and its 1200V rating supports bridging across 240VAC inputs with margin. Ensure matching diodes for balanced current sharing and thermal symmetry in the bridge layout.