Diodes Incorporated SBG1025L-T-F

Overview

SBG1025L-T-F from Diodes Incorporated is a 25 V, 10 A surface-mount Schottky barrier rectifier in D2PAK (TO-263) package, featuring 0.34 V forward voltage at 10 A and 25 °C, 3.0 °C/W junction-to-case thermal resistance, and 200 A non-repetitive surge capability - deployed in DC-DC converter output stages and low-voltage polarity protection circuits.

For engineers reviewing the SBG1025L-T-F datasheet, SBG1025L-T-F pinout, SBG1025L-T-F application, or SBG1025L-T-F equivalent, key selection criteria include forward voltage at rated current, thermal resistance under 120 °C case temperature, reverse leakage at 125 °C, peak repetitive reverse voltage margin, and D2PAK mounting compatibility with high-current PCB layouts.

Technical Context

This Schottky rectifier uses guard ring die construction to suppress transient-induced avalanche breakdown and sustain reliable operation under fast-switching, high-di/dt conditions typical of synchronous buck converters. Its low VF and high IF(AV) rating enable efficient power delivery in 3.3 V–12 V input systems where conduction loss dominates thermal budget.

The device exhibits 350 pF typical junction capacitance at 4 V reverse bias and 1 MHz, supporting high-frequency rectification up to several hundred kHz without excessive capacitive switching loss. Reverse leakage remains below 1.0 mA at 125 °C, ensuring stable blocking performance in thermally constrained environments.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263), surface-mount, single-diode configuration with exposed drain pad for thermal conduction. Dimensions per JEDEC MS-013AA: length 9.65 mm max, width 10.66 mm max, height 15.87 mm max. Tin-plated terminals, RoHS-compliant, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-10BQ030-M3/45 and MBR1020CT, SBG1025L-T-F offers optimal balance of low VF, D2PAK thermal performance, and 25 V rating for cost-sensitive 12–24 V DC-DC and protection applications - avoiding over-spec'd voltage margin or incompatible packaging.

Availability

SBG1025L-T-F is available at Aetrix Electronics and suitable for DC-DC converter output rectification, polarity protection circuits, freewheeling diode applications, and low-voltage inverter output stages requiring stable component supply and long-term production continuity.

Supply support for SBG1025L-T-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets with high-reliability power and signal solutions.

SBG1025L-T-F belongs to Diodes' high-current Schottky rectifier product line, engineered specifically for high-efficiency, low-voltage power conversion and protection in space-constrained surface-mount applications.

FAQ

Is SBG1025L-T-F pin-compatible with SBG1030L-T-F?

Yes - both share identical D2PAK package, anode/cathode terminal layout, and thermal pad configuration. The only functional difference is peak reverse voltage: 25 V for SBG1025L-T-F versus 30 V for SBG1030L-T-F. Electrical substitution is permissible if 25 V blocking suffices for the application.

What is the maximum recommended PCB copper area for the exposed thermal pad?

Diodes recommends a minimum 200 mm² copper pour connected to the exposed cathode pad via ≥4 thermal vias (0.3 mm diameter, filled or plated) to an internal ground plane. This achieves near-datasheet RθJC performance and maintains TJ < 125 °C at 10 A continuous with 40 °C ambient.

Does SBG1025L-T-F require derating at elevated ambient temperatures?

Yes - its forward current rating drops linearly above TC = 25 °C. At TC = 120 °C, IO is rated 10 A; at TC = 80 °C, it is ~14.5 A. Derating must follow Fig. 1 in DS30127 Rev. 8, using measured case temperature - not ambient - as the reference.

Can SBG1025L-T-F be used in parallel for higher current handling?

No - Schottky diodes exhibit negative temperature coefficient of VF, causing current imbalance. Parallel operation without individual ballast resistors or matched thermal coupling risks thermal runaway. For >10 A, select a higher-rated single device such as SBG2025L-T-F (20 A).