Diodes Incorporated SBG3030CT-T-F

Overview

SBG3030CT-T-F from Diodes Incorporated is a 30A, 30V surface-mount Schottky barrier rectifier in TO-263 (D2PAK) package, featuring 0.55V forward voltage at 15A/25°C, 250A non-repetitive surge capability, and guard ring die construction for transient protection-used in low-voltage, high-frequency inverters and polarity protection circuits.

For engineers reviewing the SBG3030CT-T-F datasheet, SBG3030CT-T-F pinout, SBG3030CT-T-F application, or SBG3030CT-T-F equivalent, key selection criteria include its 30A average rectified current at TC = 100°C, 1.5°C/W junction-to-case thermal resistance, 420pF typical capacitance at 1MHz, RoHS-compliant tin finish, and TO-263 mechanical compatibility with high-power PCB layouts.

Technical Context

This dual-common-cathode Schottky rectifier integrates two independent 30A/30V diode elements in a single TO-263 thermally optimized package. Its guard ring die structure enhances transient voltage immunity, while low V_F and high I_FSM support efficient energy recovery in switching power supplies.

The device operates across –55°C to +125°C junction temperature range and delivers stable performance under 8.3ms half-sine surge conditions up to 250A. Its 420pF total capacitance per element at 1MHz and 4V reverse bias enables fast switching in DC-DC converters and OR-ing applications.

Key Specifications

Pinout & Package

TO-263 (D2PAK) package with exposed anode-side thermal pad; 4-terminal configuration: Pins 1 and 3 are anodes, Pin 2 and Pin 4 share common cathode connection (dual-diode, common-cathode topology).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with V30100CI-M3/4W and MBR3030CT, SBG3030CT-T-F uniquely combines TO-263 SMT compatibility, dual-diode integration, lowest V_F, and highest I_FSM-making it optimal for compact, high-reliability 24V power rails requiring minimal thermal overhead.

Availability

SBG3030CT-T-F is available at Aetrix Electronics and suitable for DC-DC converter secondary rectification, OR-ing diode implementation, motor drive freewheeling paths, and automotive polarity protection requiring stable component supply and long-term industrial lifecycle support.

Supply support for SBG3030CT-T-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SBG30xxCT series belongs to Diodes' high-current Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and automotive systems where low V_F and robust surge handling are critical.

FAQ

What is the thermal pad soldering requirement for SBG3030CT-T-F?

The exposed thermal pad on the TO-263 package must be soldered to a minimum 12 mm² copper area with ≥4 thermal vias (0.3mm diameter, filled) connecting to inner ground planes. This achieves the specified 1.5°C/W R_θJC; insufficient pad area increases junction temperature by up to 25°C at full 30A load.

Can SBG3030CT-T-F replace a single 30A Schottky in a conventional rectifier bridge?

No-it contains two independent anodes sharing one cathode (dual-common-cathode), not four terminals for full-bridge use. It replaces two discrete 30A Schottkys in OR-ing or dual-input configurations, but requires external cathode routing for bridge implementations.

Is SBG3030CT-T-F suitable for 48V input systems?

No-its 30V V_RRM provides only 1.25× margin over 24V nominal systems. For 48V applications, SBG3045CT-T-F (45V rating) is the qualified variant in the same package and pinout, maintaining identical thermal and surge performance.

Does the guard ring structure affect reverse leakage at high temperature?

Yes-IRM rises to 75 mA at T_J = 100°C (vs. 1.0 mA at 25°C), consistent with Schottky physics. The guard ring prevents edge breakdown but does not suppress intrinsic thermal leakage; designs operating near 100°C must account for this 75× increase in IRM for standby power budgeting.