Diodes Incorporated SBG3060CT-T

Overview

SBG3060CT-T from Diodes Incorporated is a 30A, 60V surface-mount Schottky barrier rectifier in D2PAK package, featuring low forward voltage (0.70V @ 15A, 25°C), high surge capability (250A peak), and thermal resistance of 1.5 K/W. It is designed for low-voltage, high-frequency inverters, freewheeling, and polarity protection circuits in industrial power supplies and DC-DC converters.

For engineers reviewing the SBG3060CT-T datasheet, SBG3060CT-T pinout, SBG3060CT-T application, or SBG3060CT-T equivalent, key selection criteria include forward voltage drop at rated current, junction-to-case thermal resistance, peak repetitive reverse voltage rating, and surge current handling under 8.3ms half-sine conditions.

Technical Context

This dual-element Schottky rectifier uses guard-ringed die construction to enhance transient robustness and reduce leakage. Its low V_F and high I_O support efficient power conversion in 12–48V systems where conduction loss minimization is critical.

The device operates across –65°C to +150°C with RoHS-compliant bright tin terminals and UL 94V-0 molded plastic case. Junction capacitance is 420 pF at 4.0V reverse bias and 1.0 MHz, enabling suitability in high-frequency switching topologies.

Key Specifications

Pinout & Package

D2PAK (TO-263) package: 3-pin configuration with exposed metal tab (pin 2 & 4) serving as cathode connection and thermal path; molded plastic body, UL 94V-0 rated, 1.7 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-30CPH06-M3 and MBR3060CT, SBG3060CT-T delivers lower forward drop and superior thermal performance in D2PAK, making it optimal for space-constrained, thermally demanding 30A rectification where reliability under surge and high temperature is critical.

Availability

SBG3060CT-T is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC-DC converters, and motor drive polarity protection requiring stable component supply and long-term manufacturing continuity.

Supply support for SBG3060CT-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and automotive markets.

The SBG series targets high-current Schottky rectification in compact surface-mount packages, emphasizing low V_F, robust surge handling, and thermal performance for next-generation power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The SBG3060CT-T has an operating junction temperature range of –65°C to +150°C. For reliable continuous operation at 30A average current, case temperature must be maintained ≤100°C per the derating curve in Figure 1; exceeding this requires active cooling or current reduction to prevent thermal runaway.

Is SBG3060CT-T suitable for capacitive-input filter applications?

No - the datasheet explicitly states that current must be derated by 20% for capacitive loads due to increased peak current stress. At 30A rated current, only 24A should be used with capacitor-input rectifiers to avoid exceeding I_FSM limits during startup surges.

Does the D2PAK package require thermal vias under the tab?

Yes - the exposed metal tab (pins 2 & 4) is the primary thermal path. To achieve the specified 1.5 K/W R_JC, at least six 0.3mm-diameter thermal vias with annular rings must connect the tab to an internal or backside copper plane; insufficient copper area increases effective R_JA by >40%.

How does the guard-ring construction improve reliability?

The guard-ring die structure suppresses edge leakage and prevents premature avalanche breakdown at the silicon periphery. This reduces IR at high temperature (75 mA @ 100°C vs. >150 mA for non-guarded equivalents) and improves long-term stability under repetitive reverse-bias transients in industrial environments.