Diodes Incorporated SBR10E45P5-7

Overview

SBR10E45P5 from Diodes Incorporated is a 10A, 45V Super Barrier Rectifier (SBR®) in PowerDI5 package, featuring ultra-low 0.47V max forward voltage at 10A/25°C and only 0.28mA max reverse leakage at 45V/125°C. It serves as a high-efficiency rectifier, freewheeling diode, or polarity protection device in compact AC-DC adapters and DC-DC converters.

For engineers reviewing the SBR10E45P5 datasheet, SBR10E45P5 pinout, SBR10E45P5 application, or SBR10E45P5 equivalent, key selection criteria include thermal resistance (RθJA = 88°C/W), surge rating (IFSM = 275A), ESD robustness (HBM = 8kV), low-profile packaging (<1.1mm height), and high-temperature IR stability up to +150°C.

Technical Context

This SBR uses patented Super Barrier Rectifier technology to achieve Schottky-like VF with significantly lower IR than standard Schottky diodes-especially critical above 100°C. Its structure enables stable 0.05mA typical IR at 125°C under 45V bias, unlike conventional Schottkys that degrade rapidly with temperature.

The PowerDI5 package integrates a copper leadframe with matte tin terminals and green molding compound (UL 94V-0), delivering RθJC = 14°C/W for efficient heat transfer to PCB copper. Its 1.5K tape-and-reel format (suffix -7) supports automated SMT assembly in space-constrained power stages.

Key Specifications

Pinout & Package

Package: PowerDI5 - surface-mount, thermally enhanced, 3-terminal plastic package with exposed cathode pad; 3.966mm × 6.51mm footprint, 1.10mm max height, 0.093g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with V10P45-M3/86A and SBRT10U45SP5, the SBR10E45P5 delivers the lowest combined VF/IR trade-off at high temperature, making it optimal for thermally dense, high-reliability 10W–30W power stages where leakage-driven thermal runaway must be avoided.

Availability

SBR10E45P5 is available at Aetrix Electronics and suitable for AC-DC adapters, DC-DC converters, and industrial power supplies requiring stable component supply, consistent thermal performance across temperature, and RoHS-compliant green manufacturing.

Supply support for SBR10E45P5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets with high-reliability components.

The SBR® product line targets high-efficiency power conversion applications where Schottky limitations-especially high-temperature reverse leakage-compromise system reliability and efficiency.

FAQ

What is the maximum junction temperature and how is it related to thermal design?

The SBR10E45P5 has an operating junction temperature range of –55°C to +150°C. Its RθJA = 88°C/W (on 2″×2″ Al board) means that at 10A/25°C, junction temperature rises ~41°C above ambient-well within limit. For sustained 10A operation above +70°C ambient, PCB copper area must be increased or airflow added to maintain TJ < 150°C.

Can this diode replace a standard Schottky in existing designs without layout changes?

Yes-the PowerDI5 footprint matches common SMD diode land patterns (e.g., SO-8 variant), and its 3.97mm × 6.51mm outline is compatible with standard stencil apertures. However, the exposed cathode pad must be fully soldered to a thermal pad; omitting this will degrade RθJA by >30% and risk thermal failure at rated current.

Is the SBR10E45P5 qualified for automotive applications?

No-this part is not AEC-Q101 qualified. While it operates from –55°C to +150°C and meets JEDEC moisture sensitivity level 1, Diodes explicitly states automotive-grade versions require PPAP capability and IATF 16949 manufacturing; contact Diodes directly for AEC-Q101-compliant variants like SBR10E45Q5.

How does the SBR® technology differ from trench Schottky or planar fast recovery diodes?

SBR® uses a proprietary multi-layer barrier structure that achieves Schottky-equivalent VF while suppressing thermionic emission-resulting in IR that remains stable up to 150°C. In contrast, trench Schottkys show exponential IR rise above 100°C, and fast recovery diodes have VF > 0.9V, increasing conduction loss by >90% at 10A.