Diodes Incorporated SBR10U200CTB-13

Overview

SBR10U200CTB-13 from Diodes Incorporated is a 10A dual common-cathode Super Barrier Rectifier in TO263AB (D2PAK) package, rated for 200V peak repetitive reverse voltage, with ultra-low forward voltage (0.65V typ. at 10A, 25°C) and soft fast switching (trr ≤ 30ns). It serves as a high-efficiency output rectifier in DC/DC converters and AC/DC secondary-side power supplies.

For engineers reviewing the SBR10U200CTB-13 datasheet, SBR10U200CTB-13 pinout, SBR10U200CTB-13 application, or SBR10U200CTB-13 equivalent, key selection criteria include forward voltage drop at high current and temperature, reverse recovery behavior under dI/dt stress, thermal resistance to heatsink (RθJC = 2°C/W), and RoHS-compliant "Green" packaging compliance.

Technical Context

This device implements Diodes' patented SBR® technology-distinct from Schottky or standard PN junction rectifiers-to achieve lower VF than conventional Schottkys while maintaining higher temperature stability and reduced leakage. Its dual common-cathode configuration supports full-wave center-tapped or parallel-leg rectification topologies.

The TO263AB (D2PAK) package enables surface-mount assembly with low thermal resistance (2°C/W junction-to-case) and robust thermal coupling to PCB copper planes or external heatsinks. It operates continuously from –65°C to +175°C junction temperature, supporting automotive under-hood and industrial power supply environments.

Key Specifications

Pinout & Package

Package: TO263AB (D2PAK), surface-mount, thermally enhanced plastic package with exposed metal tab (cathode-connected) for heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-VF rectifier applications.

Compared with VS-10EWH06-M3 and MUR1020CT, SBR10U200CTB-13 uniquely balances 200V blocking, sub-0.65V VF, and ≤30ns soft recovery-enabling compact, efficient, and EMI-optimized 10A rectification where voltage rating and thermal performance are jointly critical.

Availability

SBR10U200CTB-13 is available at Aetrix Electronics and suitable for server power supplies, automotive DC/DC converters, and industrial motor drive auxiliary PSUs requiring stable component supply, long-term lifecycle support, and RoHS 3/Green compliance.

Supply support for SBR10U200CTB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

SBR10U200CTB-13 belongs to Diodes' Super Barrier Rectifier (SBR®) product line, engineered specifically to replace Schottky and ultrafast diodes in high-current, high-efficiency power conversion where low VF, soft recovery, and thermal robustness are essential.

FAQ

What is the thermal resistance from junction to case (RθJC) for SBR10U200CTB-13?

The junction-to-case thermal resistance is 2°C/W, measured from the silicon die to the exposed metal tab (common cathode). This value assumes proper soldering of the tab to a minimum 100 mm² copper pad on a 1-oz FR-4 PCB, enabling effective heat transfer without an external heatsink in many 10A applications.

Is SBR10U200CTB-13 qualified for automotive applications?

SBR10U200CTB-13 is not AEC-Q101 qualified out-of-the-box. However, Diodes offers automotive-grade variants (e.g., SBR10U200CTBQ-13) with PPAP documentation, IATF 16949 manufacturing, and AEC-Q101 stress testing. Standard SBR10U200CTB-13 may be used in non-safety-critical automotive subsystems pending internal qualification.

How does the SBR® technology differ from standard Schottky rectifiers?

SBR® uses a proprietary epitaxial structure that combines Schottky-like low VF with improved high-temperature leakage control and softer reverse recovery than conventional Schottkys. Unlike Schottky diodes, it avoids catastrophic thermal runaway above 125°C and exhibits lower IR drift-making it suitable for 175°C continuous operation where Schottkys typically fail.

Can SBR10U200CTB-13 be used in parallel with another unit for higher current?

Yes-its positive temperature coefficient of VF enables natural current sharing when paralleled. However, layout symmetry (matched trace lengths, thermal coupling, and shared cathode plane) is essential. Derating to ≤8A per device is recommended for reliability in continuous parallel operation above 85°C ambient.