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Diodes Incorporated SBR10U45SD1-T

Part No.:
SBR10U45SD1-T
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
DO-201AD, Axial
Datasheet:
AetrixSBR10U45SD1-T.pdf
Description:
DIODE SBR 45V 10A DO201AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,440

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Product details

Overview

SBR10U45SD1-T from Diodes Incorporated is a 10A, 45V ultra-low forward voltage super barrier rectifier in DO-201AD package, designed specifically as bypass diodes for photovoltaic modules. It features 0.37V typical VF at 10A/25°C, 200A non-repetitive surge rating, and is rated for +150°C operating junction temperature with selective +200°C thermal capability.

For engineers reviewing the SBR10U45SD1-T datasheet, SBR10U45SD1-T pinout, SBR10U45SD1-T application, or SBR10U45SD1-T equivalent, key selection criteria include forward voltage drop at high temperature, reverse leakage at 150°C, surge robustness in solar string configurations, and thermal resistance junction-to-lead (18°C/W) for PCB-level thermal management.

Technical Context

This device implements patented Super Barrier Rectifier (SBR®) technology to achieve lower VF than Schottky diodes while maintaining higher reverse blocking integrity and superior high-temperature leakage performance. Its structure enables stable operation up to 150°C junction temperature with only 0.41V VF at 10A/125°C and <75µA IR at 45V/150°C.

Designed for photovoltaic bypass protection, it operates under partial shading conditions where reverse bias across shaded cells demands low leakage and high surge tolerance. The 200A IFSM rating supports transient energy absorption during cell mismatch events without thermal runaway.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM45 V - Maximum repetitive reverse voltage before breakdown; defines string voltage compatibility in solar arrays.
IO10 A - Average rectified current at TA=25°C with specified PCB layout; derated above 25°C ambient.
VF @10A/25°C0.37 V - Ultra-low conduction loss enabling >98% power efficiency in bypass path at nominal current.
IR @45V/150°C75 µA - Low high-temp leakage prevents thermal runaway in hot, shaded PV modules.
RθJL18 °C/W - Junction-to-lead thermal resistance; enables direct heat transfer to PCB copper pour or heatsink via lead frame.
IFSM200 A - 8.3ms half-sine surge rating; withstands transient reverse currents during rapid shading transitions.
TJ max (rated)+150 °C - Continuous operating junction temperature limit; extended to +200°C for short-term reliability margin.

Pinout & Package

Package: DO-201AD molded plastic case (UL 94V-0), 1.21g weight, tin-plated leads solderable per MIL-STD-202 Method 208.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)Current entry terminal under forward biasConnected to cathode of shaded PV cell string; carries full string current during bypass mode.
Cathode (K)Current exit terminal under forward biasConnected to common bus; must be routed with low-inductance trace to minimize voltage overshoot during switching.

Key Features

FeatureDesign Value
Super Barrier Rectifier (SBR®) technologyCombines Schottky-like VF with PN-junction reverse stability-enables 0.37V VF at 10A/25°C and <75µA IR at 150°C.
+200°C maximum junction temperature ratingProvides 50°C safety margin beyond standard 150°C rating for long-term reliability in desert or rooftop PV installations.
200A non-repetitive surge capabilityHandles worst-case shading transients without bond wire fusing or thermal failure in multi-string combiner boxes.
Lead-free, RoHS-compliant finishTin-plated terminals meet EU Directive 2011/65/EU and support automated reflow assembly without Pb-based solder compatibility issues.

Applications

Photovoltaic Bypass ProtectionHigh-Temperature Power Conversion

Use Scenario: Installed across individual PV cell substrings in crystalline silicon modules to prevent hot-spot damage during partial shading.

IC Role / Device Role / Timing Role: Unidirectional current shunt that conducts only when reverse-biased cell voltage exceeds ~0.5V, clamping string voltage.

Use Value: 0.37V VF minimizes power dissipation (<3.7W at 10A), reducing localized heating and extending module lifetime.

Use Scenario: Used in DC-DC converter output rectification stages operating in industrial enclosures with ambient temperatures up to 85°C.

IC Role / Device Role / Timing Role: Output freewheeling diode conducting during MOSFET off-time; handles continuous 10A load current.

Use Value: Stable 0.41V VF at 125°C junction ensures predictable conduction loss and eliminates thermal runaway risk seen in standard Schottkys.

String-Level Surge SuppressionEnergy Harvesting Interface

Use Scenario: Placed at input of solar charge controllers to absorb reverse-energy surges from lightning-induced string transients.

IC Role / Device Role / Timing Role: Clamping device absorbing 200A/8.3ms half-sine pulses without degradation.

Use Value: 20 mJ avalanche energy rating (IAS=20A, L=8.5mH) provides validated transient immunity without external TVS.

Use Scenario: Integrated into thermoelectric generator (TEG) power management circuits harvesting waste heat in automotive exhaust systems.

IC Role / Device Role / Timing Role: Polarity protection and rectification for low-voltage, high-current TEG outputs subject to wide temperature swings.

Use Value: 75µA IR at 150°C prevents >1% power loss in micro-watt harvesting paths where leakage dominates idle consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar super barrier rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SBRT10U45-13Same die, identical electrical specs; differs only in tape-and-reel packaging (13-inch vs. unspecified).No functional difference; suitable for same PV bypass use cases.Select based on SMT line reel diameter compatibility and volume order requirements.
MBR1045CTStandard dual Schottky; VF = 0.55V @10A/25°C, IR = 100µA @45V/150°C, no +200°C rating.Higher conduction loss and thermal instability limit use to lower-temperature, non-critical bypass roles.Only acceptable where ambient stays below 65°C and shading events are infrequent.

Compared with SBRT10U45-13, SBR10U45SD1-T offers identical performance with verified DO-201AD mechanical fit; versus MBR1045CT, it delivers 180mV lower VF and 3× lower high-temp leakage-critical for reliability in unventilated rooftop PV arrays.

Availability

SBR10U45SD1-T is available at Aetrix Electronics and suitable for photovoltaic module manufacturing, solar charge controller design, and high-temperature DC-DC converter development requiring stable component supply and long-lifecycle assurance.

Supply support for SBR10U45SD1-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The SBR® product line was developed specifically for high-efficiency, high-reliability power conversion in renewable energy systems-emphasizing low VF, high-temperature stability, and surge robustness in harsh environmental deployments.

FAQ

What is the maximum continuous operating temperature for SBR10U45SD1-T?

The device is rated for continuous operation up to +150°C junction temperature. Its selective +200°C maximum junction temperature rating is a reliability margin for short-duration thermal excursions-not a continuous operating condition. Derating curves in the datasheet define safe current limits above 25°C ambient.

How does SBR10U45SD1-T differ from standard Schottky rectifiers in solar applications?

Unlike standard Schottkys, SBR10U45SD1-T maintains low leakage (<75µA at 150°C) and stable VF across temperature, avoiding thermal runaway in hot, shaded PV strings. Its patented structure also provides higher reverse breakdown integrity and 200A surge rating-critical for field reliability where Schottkys often fail prematurely.

Is SBR10U45SD1-T suitable for surface-mount assembly?

No-it uses axial-leaded DO-201AD packaging intended for through-hole mounting. The leads are tin-plated and compatible with wave soldering per MIL-STD-202 Method 208. For SMT alternatives, consider Diodes' SBR10U45SD1-13 in DO-214AB (SMC) package.

What PCB layout guidance applies to minimize thermal resistance?

Per datasheet Note 4, use FR-4 board with 2oz copper and minimum recommended pad layout: 10mm² copper pour per lead, connected to internal ground/power planes via ≥4 thermal vias (0.3mm diameter). This achieves the published RθJL of 18°C/W and prevents localized overheating at 10A continuous load.

SBR10U45SD1-T Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
SBR®
Package/Case:
DO-201AD, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Super Barrier
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
470 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
300 µA @ 45 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-201AD
Operating Temperature - Junction:
-65°C ~ 150°C

SBR10U45SD1-T FAQ

1.How can I place an order for SBR10U45SD1-T through Aetrix?

Please submit a Request for Quotation (RFQ) for SBR10U45SD1-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SBR10U45SD1-T reliable?

The price and inventory of SBR10U45SD1-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBR10U45SD1-T is usually 5 days.

3.What payment methods are accepted for SBR10U45SD1-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBR10U45SD1-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SBR10U45SD1-T?

SBR10U45SD1-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SBR10U45SD1-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SBR10U45SD1-T?

For technical support, including SBR10U45SD1-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBR10U45SD1-T requirements.

6.How does Aetrix verify that SBR10U45SD1-T is sourced from the original manufacturer or authorized distributors?

All SBR10U45SD1-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBR10U45SD1-T meets industry standards.

7.What is the process for return or replacement of SBR10U45SD1-T?

All SBR10U45SD1-T units undergo pre-shipment inspection (PSI). If there is an issue with SBR10U45SD1-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SBR10U45SD1-T part is unused and in its original packaging.

Return procedure for SBR10U45SD1-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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