Diodes Incorporated SBR2M60S1FQ-7

Overview

SBR2M60S1FQ from Diodes Incorporated is a 60 V, 2 A Super Barrier Rectifier (SBR®) in SOD123F package, featuring 0.70 V max forward voltage at 2 A and 800 nA max reverse leakage at 60 V/25°C. It delivers low conduction loss and stable high-temperature operation up to +175°C junction, and is AEC-Q101 qualified for automotive reverse polarity protection and DC-DC converter output rectification.

For engineers reviewing the SBR2M60S1FQ datasheet, SBR2M60S1FQ pinout, SBR2M60S1FQ application, or SBR2M60S1FQ equivalent, key selection criteria include forward voltage at 1–2 A, reverse leakage at 125°C/60 V, thermal resistance (RθJA = 115°C/W), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

The SBR2M60S1FQ employs patented Super Barrier Rectifier (SBR®) technology to achieve lower VF than Schottky diodes while maintaining superior high-temperature IR stability. Its structure enables 12 ns reverse recovery time and 35 pF junction capacitance at 60 V, supporting high-frequency switching in SMPS.

Designed for operation from –55°C to +175°C, it sustains <350 µA IR at 60 V/125°C (per Figure 4), enabling reliable performance in under-hood automotive environments where thermal runaway must be avoided. The SOD123F package provides 40°C/W RθJC for efficient heat transfer to PCB copper pads.

Key Specifications

Pinout & Package

Package: SOD123F - surface-mount, single-diode plastic package with cathode band marking, 0.016 g weight, UL 94V-0 molding compound, and matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super barrier rectifier applications.

Compared with SBRT2M60S1FQ and MBR260S1F, the SBR2M60S1FQ uniquely balances ultra-low VF, sub-µA IR at 125°C, and AEC-Q101 compliance - making it the sole option for automotive-grade 2 A rectification where both efficiency and thermal robustness are mandatory.

Availability

SBR2M60S1FQ is available at Aetrix Electronics and suitable for automotive ECUs, industrial DC-DC converters, and AC-DC auxiliary supplies requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.

Supply support for SBR2M60S1FQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SBR® product line targets high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications - specifically engineered to replace Schottky and PN rectifiers where VF/IR trade-offs limit performance at elevated temperatures.

FAQ

Is SBR2M60S1FQ suitable for synchronous rectification replacement?

No - it is a passive rectifier, not a synchronous MOSFET driver or integrated controller. While its 12 ns tRR and low VF make it an excellent *asynchronous* replacement for slower PN diodes in buck or flyback outputs, it cannot actively switch like a MOSFET-based synchronous rectifier. Use only where gate drive complexity or cost prohibits active rectification.

What is the maximum continuous forward current at +100°C ambient?

Per Figure 5, the average forward current derates to approximately 1.1 A at TA = +100°C on a standard FR-4 board (0.4"×0.5", 2 oz Cu). This assumes no additional heatsinking; actual current capability depends on PCB copper area and airflow.

Does the SOD123F package support reflow soldering per J-STD-020?

Yes - the SBR2M60S1FQ is rated Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and subjected to standard Pb-free reflow profiles (peak 260°C) without baking or special handling.

How does its reverse leakage compare to standard Schottky diodes at 125°C?

At VR = 60 V and TJ = +125°C, SBR2M60S1FQ exhibits ≤350 µA IR - roughly 1/30th the leakage of typical Schottky diodes (often >10 mA at same conditions). This is due to SBR®'s barrier engineering, which suppresses thermionic emission at high temperature.