Diodes Incorporated SBR3045CTBQ-13

Overview

SBR3045CTBQ-13 from Diodes Incorporated is a 30A dual common-cathode Super Barrier Rectifier in TO263AB (D2PAK) package, rated for 45V peak repetitive reverse voltage, 0.70V max forward voltage at 15A/25°C, and qualified to AEC-Q101 for automotive reliability. It delivers soft fast switching with +150°C junction operation in DC-DC output stages and high-efficiency AC-DC secondary rectification.

For engineers reviewing the SBR3045CTBQ-13 datasheet, SBR3045CTBQ-13 pinout, SBR3045CTBQ-13 application, or SBR3045CTBQ-13 equivalent, key selection criteria include forward voltage at elevated temperature, thermal resistance (2°C/W per leg), surge current rating (180A), and AEC-Q101 qualification status for under-hood power conversion designs.

Technical Context

This dual-element rectifier integrates two independent SBR® diodes sharing a common cathode terminal, enabling synchronous half-wave or center-tapped full-wave configurations. Its patented barrier structure achieves lower VF than standard Schottky diodes while maintaining superior high-temperature leakage performance (50µA max at 45V/125°C).

The device operates up to +150°C junction temperature with 2°C/W thermal resistance per leg to case, supporting high-power density designs where thermal management is constrained. Its soft recovery minimizes EMI in switching converters operating above 100kHz.

Key Specifications

Pinout & Package

Package: TO263AB (D2PAK), surface-mount with exposed copper thermal pad on underside and three terminals: Anode 1, Cathode (common), Anode 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature rectifier applications.

Compared with SBRT3045CTB-13, the SBR3045CTBQ-13 offers lower surge rating but identical thermal and forward characteristics at lower cost; versus MBR3045CT-1G, it provides 120mV lower VF at 125°C and guaranteed automotive qualification-critical for safety-critical power rails.

Availability

SBR3045CTBQ-13 is available at Aetrix Electronics and suitable for automotive power conversion, industrial SMPS, server ORing circuits, and EV onboard charger designs requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for SBR3045CTBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

The SBR® Super Barrier Rectifier product line targets high-efficiency, high-temperature power conversion where Schottky limitations (leakage, thermal instability) and PN diode losses (forward drop) must both be overcome.

FAQ

What does the "Q" suffix in SBR3045CTBQ-13 signify?

The "Q" denotes AEC-Q101 qualification per Diodes Incorporated's internal part numbering convention. This version undergoes accelerated stress testing including HTGB, HTRB, and temperature cycling to validate reliability for automotive applications. The base part SBR3045CTB-13 lacks this qualification and is intended for commercial use only.

Can SBR3045CTBQ-13 replace standard Schottky rectifiers in existing designs?

Yes, provided the PCB layout accommodates the TO263AB (D2PAK) footprint and thermal management accounts for its 2°C/W per-leg RθJC. Its lower VF at high temperature improves efficiency, but designers must verify that the soft recovery characteristic does not interact adversely with existing snubber networks optimized for faster Schottky turn-off.

Is the common cathode pin electrically and thermally connected to the exposed tab?

Yes-the cathode terminal is bonded directly to the large copper thermal pad on the underside of the TO263AB package. This dual electrical/thermal connection requires the PCB land pattern to tie the cathode copper pour to the thermal pad, ensuring both low-inductance current return and optimal heat extraction to the heatsink or internal plane.

How does SBR® technology differ from trench Schottky or MOSFET synchronous rectifiers?

SBR® uses a proprietary epitaxial barrier structure that achieves Schottky-equivalent VF without metal-semiconductor interface limitations. Unlike trench Schottky, it maintains low leakage up to +150°C; unlike MOSFET rectifiers, it requires no gate drive circuitry and exhibits inherent soft recovery-eliminating shoot-through risk and simplifying layout in high-noise automotive environments.