Diodes Incorporated SBR3045CTFP

Overview

SBR3045CTFP from Diodes Incorporated is a 45 V, 30 A total (15 A per leg) dual common-cathode Super Barrier Rectifier in ITO-220AB package, featuring 0.55 V max forward voltage at 15 A and 25 °C, 0.5 mA max reverse leakage at 45 V and 25 °C, and 200 A non-repetitive surge rating - optimized for high-efficiency DC-DC converters and AC-DC adapters.

For engineers reviewing the SBR3045CTFP datasheet, SBR3045CTFP pinout, SBR3045CTFP application, or SBR3045CTFP equivalent, key selection criteria include its ultra-low VF at high current, low IR at elevated temperature, rugged avalanche capability versus Schottky diodes, and thermal resistance of 4 °C/W (junction-to-case, per leg) with heatsink mounting.

Technical Context

This dual common-cathode rectifier integrates two independent SBR® die in a single isolated-package configuration, enabling synchronous or interleaved rectification topologies without external cathode tieing. Its patented Super Barrier structure delivers lower forward voltage than standard PN diodes while maintaining superior avalanche ruggedness over Schottky alternatives.

Designed for operation up to +150 °C junction temperature, it exhibits only 0.50 V typical VF at 15 A and +125 °C, and reverse leakage remains below 100 mA at 45 V and +125 °C - critical for thermal stability in compact, high-power-density power supplies.

Key Specifications

Pinout & Package

ITO-220AB package features electrically isolated tab (heatsink-connected terminal), three leads: Pin 1 (Anode 1), Pin 2 (Cathode, common), Pin 3 (Anode 2). The metal tab is internally connected to the cathode and rated for 2000 VAC isolation from heatsink surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual common-cathode super barrier rectifier applications.

Compared with SBRT3045CTFP, SBR3045CTFP trades 0.5 °C/W higher thermal resistance for broader qualification across automotive-grade reflow profiles; versus MBR3045CTFP, it delivers 12% lower conduction loss and certified avalanche survivability - essential for unregulated industrial inputs.

Availability

SBR3045CTFP is available at Aetrix Electronics and suitable for DC-DC converters, AC-DC adapters, and telecom power supplies requiring stable component supply, RoHS/Green compliance, and qualified thermal performance across -40 to +125 °C operating range.

Supply support for SBR3045CTFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SBR® Super Barrier Rectifier product line targets high-efficiency, high-reliability power conversion in space-constrained industrial, computing, and telecom systems - emphasizing low VF, high-temperature stability, and robust surge immunity.

FAQ

What is the maximum continuous junction temperature for SBR3045CTFP?

The absolute maximum junction temperature is +150 °C, validated per JEDEC JESD22-A108. Operation at this limit requires thermal design ensuring RθJA ≤ 11 °C/W with 75 °C ambient and 15 A per leg - typically achieved using a 50 × 50 × 23 mm aluminum heatsink per the datasheet test condition.

Can SBR3045CTFP replace a standard TO-220 Schottky rectifier in existing PCB layouts?

Yes - the ITO-220AB footprint matches TO-220AB mechanical outlines (15.87 mm L1, 10.11 mm E), and pinout is identical: Anode–Cathode–Anode. However, the isolated tab requires verification of heatsink grounding; if the original design grounds the tab, an insulating kit must be added.

Does SBR3045CTFP support bidirectional current flow?

No - it is a unidirectional rectifier. Each anode conducts only toward the common cathode. Reverse conduction is blocked up to 45 V (VRRM); applying reverse voltage exceeding this rating risks permanent breakdown, regardless of current magnitude.

How does the SBR® technology differ from trench Schottky diodes?

SBR® uses a modified PN junction with graded doping and barrier engineering to achieve Schottky-like VF while retaining PN avalanche capability (>200 A IFSM). Trench Schottky diodes rely on metal-semiconductor contact and lack controlled avalanche behavior - making them prone to single-event failure under surge conditions.