Diodes Incorporated SBR30A100CT-G

Overview

SBR30A100CT-G from Diodes Incorporated is a 100 V, 30 A total (15 A per leg) dual common-cathode Super Barrier Rectifier in TO-220AB package, featuring 0.8 V max forward voltage at 15 A and 0.1 mA max reverse leakage at 100 V/25°C. It delivers rugged avalanche capability and stable high-temperature leakage for DC-DC converter output rectification and AC-DC adapter freewheeling.

For engineers reviewing the SBR30A100CT-G datasheet, SBR30A100CT-G pinout, SBR30A100CT-G application, or SBR30A100CT-G equivalent, key selection criteria include its low VF vs. Schottky alternatives, thermal stability up to +175°C junction temperature, TO-220AB mechanical compatibility, and 250 A non-repetitive surge rating for transient robustness.

Technical Context

This dual-diode rectifier integrates two independent 15 A legs sharing a common cathode terminal, enabling synchronous or interleaved operation in center-tapped or dual-output topologies. Its patented SBR technology replaces conventional Schottky construction with a barrier-engineered silicon structure that suppresses thermal runaway while maintaining ultra-low conduction loss.

It operates across –65°C to +175°C junction temperature range with 2°C/W typical junction-to-case thermal resistance (TO-220AB, 50×50×23 mm heatsink). Reverse recovery is inherently soft and fast due to minority-carrier control, eliminating snubber requirements in most 100 kHz–500 kHz switching power supplies.

Key Specifications

Pinout & Package

Package: TO-220AB - Molded plastic case with matte tin-plated copper leadframe, UL 94V-0 rated, 1.85 g weight, designed for vertical mounting with heatsink contact via tab (cathode-connected metal back).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-VF rectifier applications.

Compared with VS-30CPH01-M3 and MUR3010CTG, SBR30A100CT-G uniquely balances low VF, low IR, and rugged avalanche capability-enabling compact, thermally stable, and surge-resilient designs in high-frequency, high-temperature power conversion where reliability is non-negotiable.

Availability

SBR30A100CT-G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, AC-DC adapter freewheeling, and industrial motor drive clamping requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle support.

Supply support for SBR30A100CT-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

SBR30A100CT-G belongs to Diodes' Super Barrier Rectifier (SBR®) product line, engineered specifically to replace Schottky diodes in high-current, high-temperature power conversion where thermal stability and avalanche ruggedness are critical.

FAQ

Is SBR30A100CT-G pin-compatible with standard TO-220AB dual-diode rectifiers?

Yes. SBR30A100CT-G uses industry-standard TO-220AB mechanical dimensions and pinout: Pin 1 (tab) = common cathode, Pin 2 = Anode 1, Pin 3 = Anode 2. It mounts identically to MUR3010CTG or SB30100CT, with identical hole spacing (2.54 mm e, 5.08 mm e1) and tab geometry per AP02002.

What is the maximum recommended heatsink thermal resistance for continuous 30 A operation?

At 30 A total (15 A per leg), junction temperature must stay ≤175°C. With RθJC = 2°C/W and TA = 70°C, maximum allowable RθSA is 3.3°C/W using Pd = VF × IF = 0.8 V × 15 A = 12 W per leg. This assumes 50×50×23 mm Al heatsink per Diodes' test condition; smaller heatsinks require derating per Figure 4.

Does SBR30A100CT-G require a minimum reverse bias voltage to maintain low leakage?

No. Leakage current is specified at VR = 100 V and shows monotonic increase with applied reverse voltage. The device exhibits stable sub-µA leakage below 20 V reverse bias and remains well within 0.1 mA limit up to full VRRM, with no threshold or activation voltage required.

Can SBR30A100CT-G be used in parallel with another unit for 60 A applications?

Yes, but only with matched VF units and symmetrical PCB layout. Diodes Incorporated specifies ±5% VF matching between legs on same die, but inter-device matching requires binning. Parallel operation demands individual current-sharing resistors (0.01 Ω, 5 W) or active balancing to avoid thermal runaway.