Diodes Incorporated SBR30A40CT

Overview

SBR30A40CT from Diodes Incorporated is a 30A, 40V dual common-cathode Super Barrier Rectifier in TO-220AB package, engineered for high-efficiency AC/DC and DC/DC power conversion. It delivers VF = 0.45 V at 15 A and 125°C, supports 250 A non-repetitive surge current, and maintains stable leakage (IR ≤ 100 µA at 40 V, 125°C) in high-temperature industrial power supplies.

For engineers reviewing the SBR30A40CT datasheet, SBR30A40CT pinout, SBR30A40CT application, or SBR30A40CT equivalent, key selection criteria include forward voltage drop at elevated junction temperature, thermal resistance (RθJC = 2°C/W), soft-switching behavior for EMI reduction, and TO-220AB mechanical compatibility with standard heatsinks.

Technical Context

This dual-diode rectifier integrates two independent SBR elements sharing a common cathode terminal, enabling full-wave center-tap or parallel-output configurations. Its patented super barrier structure replaces traditional PN junctions with low-barrier metal-semiconductor interfaces, achieving lower VF than Schottky diodes while retaining higher reverse blocking capability and superior high-temperature IR stability.

The device operates across –65°C to +150°C junction range and is rated for 40 V peak repetitive reverse voltage (VRRM). Its soft, fast switching minimizes reverse recovery ringing and reduces snubber losses-critical in high-frequency SMPS designs operating above 100 kHz.

Key Specifications

Pinout & Package

Package: TO-220AB, 3-terminal plastic molded case with isolated tab (cathode-connected tab), UL 94V-0 rated, matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-VF rectifier applications.

Compared with VS-30CPH04 and MBR3045CT, SBR30A40CT uniquely combines TO-220AB form factor, common-cathode integration, sub-0.45 V VF at 125°C, and soft switching-making it optimal for space-constrained, thermally demanding, EMI-sensitive power supplies.

Availability

SBR30A40CT is available at Aetrix Electronics and suitable for AC/DC adapters, server VRMs, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for SBR30A40CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

SBR30A40CT belongs to the SBR® Super Barrier Rectifier product line, developed specifically to replace conventional Schottky and fast recovery diodes in high-efficiency, high-temperature power conversion systems where low VF and stable IR are essential.

FAQ

Is SBR30A40CT pin-compatible with standard TO-220AB dual-diode rectifiers like MBR3045CT?

Yes-SBR30A40CT uses the industry-standard TO-220AB outline with identical 3-pin mechanical footprint and pin 1–2–3 anode–cathode–anode assignment. The cathode (pin 2) is internally tied to the metal tab, matching MBR3045CT's connection scheme, enabling direct PCB-level replacement without layout changes.

Does the "SBR" trademark indicate a silicon carbide (SiC) device?

No-SBR stands for "Super Barrier Rectifier" and refers to Diodes Incorporated's proprietary silicon-based planar process using optimized metal-semiconductor barriers. It is not a SiC device; it is fabricated in standard silicon with enhanced barrier engineering to achieve Schottky-like conduction without the high leakage or low VRRM limitations of true Schottky diodes.

What is the maximum recommended case temperature for continuous 30 A operation?

The datasheet specifies IO = 30 A at TC = 110°C. Operation at 30 A requires maintaining case temperature ≤ 110°C via adequate heatsinking. Derating begins immediately above this point: at TC = 125°C, average current must be reduced to approximately 25 A per the Figure 1 derating curve.

Can SBR30A40CT be used in place of a single 30 A Schottky diode in a boost PFC stage?

No-it is a dual common-cathode device, not a single-diode replacement. For boost PFC, only one anode (e.g., pin 1) and the shared cathode (pin 2) would be used, leaving pin 3 floating. While functional, this wastes half the die area and offers no advantage over a dedicated single-diode part; its value lies in dual-path topologies like center-tapped rectifiers or OR-ing.