Diodes Incorporated SBR30A60CT-G

Overview

SBR30A60CT-G from Diodes Incorporated is a 30A dual common-cathode Super Barrier Rectifier rated for 60V reverse voltage, with maximum forward voltage of 0.60V at 15A and 25°C, leakage current ≤0.5mA at 60V/25°C, and thermal resistance junction-to-case of 2°C/W - optimized for high-efficiency SMPS and DC-DC converter freewheeling paths.

For engineers reviewing the SBR30A60CT-G datasheet, SBR30A60CT-G pinout, SBR30A60CT-G application, or SBR30A60CT-G equivalent, key selection criteria include low VF stability at 125°C, soft-switching behavior to reduce EMI in synchronous rectification, TO-220AB package thermal performance, and UL 1557 certification for safety-critical power supplies.

Technical Context

This dual-diode rectifier integrates two independent SBR® elements in a single TO-220AB package with common cathode configuration, enabling bidirectional current handling in center-tapped transformer designs or parallel-leg configurations. Its patented super barrier structure replaces traditional PN junctions with metal-semiconductor interfaces to achieve lower VF and superior high-temperature IR stability compared to standard Schottky diodes.

The device supports repetitive avalanche energy up to 400mJ (TJ = 25°C, IAS = 20A, L = 8.5mH, tp = 1ms) and withstands non-repetitive surge currents up to 250A (8.3ms half-sine), making it suitable for transient-prone industrial power rails. Isolation voltage is not specified for TO-220AB; only ITO-220AB variant lists 2000VAC terminal-to-heatsink rating.

Key Specifications

Pinout & Package

Package: TO-220AB - Molded plastic case with UL 94V-0 flammability rating, matte tin-plated copper leadframe, 1.85g weight, and industry-standard mechanical footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-VF rectifier applications.

Compared with VS-30CPH06-M3, SBR30A60CT-G offers UL certification and smaller TO-220AB footprint but slightly higher RθJC; versus MUR3060CTG, it delivers 65% lower VF and eliminates reverse recovery noise - critical for EMI-sensitive LED and telecom power designs.

Availability

SBR30A60CT-G is available at Aetrix Electronics and suitable for server VRMs, industrial 48V DC-DC converters, and automotive body control modules requiring stable component supply with full RoHS/Green compliance and UL safety recognition.

Supply support for SBR30A60CT-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

SBR® Super Barrier Rectifiers belong to Diodes' high-efficiency power rectification product line, developed specifically to replace Schottky diodes in 20–100V SMPS outputs where low VF, temperature stability, and soft switching are critical.

FAQ

Is SBR30A60CT-G pin-compatible with standard TO-220AB dual-diode rectifiers like MUR3060CTG?

Yes - SBR30A60CT-G uses the standard TO-220AB outline with identical pin 1 (Anode 1), pin 2 (Common Cathode), and pin 3 (Anode 2) assignment. Mechanical dimensions match JEDEC TO-220AB specifications, enabling drop-in replacement in existing footprints without layout changes.

What is the maximum operating temperature for continuous 30A conduction?

At 30A average current, junction temperature must remain ≤150°C. With RθJC = 2°C/W and typical heatsink RθCA ≈ 1.5°C/W, maximum allowable ambient temperature is ~75°C - verified using Fig. 5 derating curve, which shows 30A supported only up to 25°C ambient without forced air or enhanced heatsinking.

Does the common cathode pin (Pin 2) electrically connect to the metal tab?

Yes - in TO-220AB packages, the cathode terminal is internally bonded to the metal tab, which serves as both thermal path and electrical node. Mounting the device to a grounded heatsink electrically ties the cathode to system ground, requiring insulation if cathode reference differs from heatsink potential.

How does SBR technology differ from trench Schottky in terms of reliability under high-temperature bias?

SBR devices exhibit <0.1%/°C VF drift from 25°C to 125°C due to barrier height engineering, whereas trench Schottkys typically show >0.2%/°C drift. This results in 15–20% lower power dissipation at 125°C junction temperature, directly extending lifetime in thermally constrained enclosures per Arrhenius failure models.