Diodes Incorporated SBR3U150LP-7

Overview

SBR3U150LP-7 from Diodes Incorporated is a 3A, 150V Super Barrier Rectifier (SBR®) in U-DFN3030-8 package, designed for high-efficiency DC/DC conversion and power management. It delivers 0.91V max forward voltage at 3A, 10µA max reverse leakage at 150V, and 33A non-repetitive surge capability-enabling compact, thermally efficient rectification in boost, blocking, and recirculating diode roles.

For engineers reviewing the SBR3U150LP-7 datasheet, SBR3U150LP-7 pinout, SBR3U150LP-7 application, or SBR3U150LP-7 equivalent, key selection criteria include its ultra-low VF at high current, soft switching behavior, superior avalanche ruggedness, and compatibility with lead-free reflow profiles in space-constrained U-DFN3030-8 layouts.

Technical Context

This SBR device employs patented Super Barrier Rectifier technology to achieve lower forward voltage than standard Schottky diodes while maintaining higher reverse voltage rating and improved thermal stability. Its structure enables soft, fast recovery with minimal reverse recovery charge (Qrr), reducing EMI and switching losses in high-frequency converters.

The U-DFN3030-8 package features NiPdAu-plated copper leadframe terminals and a 0.0172g mass, optimized for low thermal resistance (RθJA = 60°C/W on 2oz Cu, 75mm² pad). It operates continuously from –65°C to +150°C with no derating up to +125°C ambient.

Key Specifications

Pinout & Package

U-DFN3030-8 is an 8-terminal, low-profile (0.60 mm typical height), exposed-pad surface-mount package with dual anode/cathode configuration optimized for thermal dissipation and high-density layout. Pin 1 is marked by a notch or "S" identifier on the bottom side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super barrier rectifier applications.

Compared with SBRT3U150LP-7, this part offers identical performance but distinct traceability; versus SDT30150SP-13, it delivers 0.14V lower VF and 8A higher surge rating-directly enabling smaller heatsinks and more robust overcurrent handling in high-reliability power stages.

Availability

SBR3U150LP-7 is available at Aetrix Electronics and suitable for boost diode, blocking diode, recirculating diode, and freewheeling diode applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SBR3U150LP-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.

The SBR® product line was developed specifically for high-efficiency, high-reliability power conversion-targeting applications where low VF, soft recovery, and avalanche ruggedness are critical, such as server PSUs, telecom rectifiers, and industrial motor drives.

FAQ

What is the maximum junction temperature for continuous operation?

The SBR3U150LP-7 is rated for continuous operation from –65°C to +150°C junction temperature. At ambient temperatures above +125°C, derating is required per the thermal characteristics table; full 3A current is guaranteed only when TJ remains ≤150°C, achievable via proper PCB copper area and airflow.

Is the U-DFN3030-8 package compatible with standard reflow profiles?

Yes-the device is fully RoHS 3 compliant and qualified for lead-free reflow per J-STD-020. Its NiPdAu-plated terminals withstand peak temperatures up to 260°C for 30 seconds. The MSL Level 1 rating means floor life is unlimited when stored at ≤30°C/60% RH, eliminating bake requirements before assembly.

Does this diode require a heatsink in typical 3A applications?

No external heatsink is required when mounted on a 2oz copper, 75mm² pad per the datasheet test condition. With RθJA = 60°C/W, power dissipation at 3A (≤2.7W) results in ~162°C rise above ambient-so keeping TA ≤ 28°C ensures TJ ≤ 150°C. In practice, ≥4-layer boards with internal ground planes typically sustain 3A at TA ≤ 60°C without added heatsinking.

How does the SBR3U150LP-7 differ from conventional Schottky rectifiers?

Unlike standard Schottky diodes, the SBR3U150LP-7 uses a proprietary super barrier structure that achieves 150V VRRM-far exceeding typical Schottky limits (~100V max)-while maintaining VF close to Schottky levels. It also exhibits superior avalanche capability and softer reverse recovery, making it suitable for higher-voltage, higher-reliability power stages where standard Schottkys would fail.