Diodes Incorporated SBR3U60SLDQ-13
- Part No.:
- SBR3U60SLDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
SBR3U60SLDQ-13.pdf
- Description:
- DIODE ARRAY SBR 60V POWERDI50608
- Quantity:
- Payment:

- Shipping:

Inventory:4,552
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Product details
Overview
SBR3U60SLDQ-13 from Diodes Incorporated is a dual isolated 3.0A, 60V Super Barrier Rectifier (SBR®) in a PowerDI5060-8 (Type D) package, featuring 0.60V max forward voltage at 3.0A and 0.10mA max reverse leakage at 60V/25°C. It delivers rugged avalanche capability (90mJ EAS), AEC-Q101 qualification, and low thermal resistance (RθJC = 20°C/W), making it suitable for automotive bridge and reverse polarity protection circuits.
For engineers reviewing the SBR3U60SLDQ-13 datasheet, SBR3U60SLDQ-13 pinout, SBR3U60SLDQ-13 application, or SBR3U60SLDQ-13 equivalent, key selection criteria include high-temperature reverse leakage stability (≤15mA at 125°C), dual-diode isolation integrity, PowerDI5060-8 thermal performance on FR-4 PCB, and AEC-Q101 PPAP readiness for automotive power systems.
Technical Context
This device integrates two electrically isolated SBR rectifiers-each rated for 60V VRRM and 3.0A IO-with patented Super Barrier technology enabling lower VF than Schottky diodes while maintaining superior avalanche ruggedness (90mJ EAS). Its construction avoids the thermal runaway limitation of Schottkys, supporting stable operation up to +175°C junction temperature.
The PowerDI5060-8 (Type D) package provides dual-diode isolation via internal die separation and shared heat slug, with NiPdAu-plated terminals ensuring solderability and corrosion resistance. Thermal design leverages RθJC = 20°C/W for direct heatsink coupling and RθJA = 70°C/W on optimized 2oz copper layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60V - Maximum repetitive reverse blocking voltage per diode; defines safe DC/AC reverse bias limit in bridge or reverse protection topologies. |
| IO (per diode) | 3.0A - Continuous average forward current rating at TA = +25°C; derates to ~2.0A at +100°C ambient per Figure 4. |
| VF max | 0.60V @ 3.0A, 25°C - Low conduction loss enables >95% efficiency in 12V automotive DC-DC output stages. |
| IR max | 0.10mA @ 60V, 25°C - Ultra-low leakage preserves battery standby time; rises to 15mA at 125°C but remains stable vs. Schottky drift. |
| EAS | 90mJ @ IAS = 2A, L = 50mH - Confirmed non-repetitive avalanche energy handling supports inductive load switching without clamping diodes. |
| RθJC | 20°C/W - Enables direct thermal path to heatsink; critical for sustained 3A operation in compact automotive modules. |
Pinout & Package
Package: PowerDI5060-8 (Type D), surface-mount, dual-isolated die configuration with exposed thermal pad. Molded green compound (UL 94V-0), NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode 1) | Anode of Diode 1 | Input terminal for first rectifier; electrically isolated from all other pins except cathode 2 connection point. |
| 2 (Cathode 1) | Cathode of Diode 1 | Output terminal for first rectifier; shares common thermal pad but no electrical connection to Diode 2 cathode. |
| 3 (Anode 2) | Anode of Diode 2 | Input terminal for second independent rectifier; fully isolated from Diode 1 anode/cathode. |
| 4 (Cathode 2) | Cathode of Diode 2 | Output terminal for second rectifier; enables dual-output or split-rail freewheeling configurations. |
| 5–8 (Thermal Pad) | Common Thermal Slug | Electrically isolated copper pad for PCB thermal relief; must be connected to ground or dedicated thermal plane for RθJC optimization. |
Key Features
| Feature | Design Value |
|---|---|
| Patented SBR® technology | Enables 0.60V VF at 3A while sustaining 90mJ avalanche energy-unachievable with standard Schottky or fast recovery diodes. |
| AEC-Q101 qualification | Validated for automotive underhood applications including engine control units and body electronics requiring PPAP documentation. |
| High-temp IR stability | Leakage remains ≤15mA at TJ = +125°C (vs. >100mA typical for Schottkys), preserving system efficiency in hot environments. |
| Green packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb); compliant with EU RoHS 2011/65/EU and JESD22-A110. |
Applications
| Bridge Diodes | Freewheeling Diodes |
|---|---|
Use Scenario: Full-wave rectification in 12V/24V automotive alternator auxiliary outputs or DC-DC converter front ends. IC Role / Device Role / Timing Role: Dual-diode configuration replaces two discrete SBRs in single-phase bridge legs, reducing footprint by 40% vs. SO-8 solutions. Use Value: 0.60V VF minimizes conduction loss; 60V VRRM accommodates load-dump transients up to ISO 7637-2 Pulse 5a. | Use Scenario: Inductive flyback suppression in solenoid drivers, fuel injector controls, and HVAC actuator circuits. IC Role / Device Role / Timing Role: Provides low-loss, fast-recovery path for stored inductor energy; dual isolation prevents cross-talk between parallel channels. Use Value: 90mJ EAS rating eliminates need for external TVS clamping in 24V industrial valve drivers operating at 10kHz PWM. |
| Blocking Diodes | Reverse Protection Diodes |
Use Scenario: OR-ing diodes in redundant 12V power supplies for ADAS domain controllers and infotainment head units. IC Role / Device Role / Timing Role: Prevents backfeed between parallel rails while minimizing voltage drop across each path. Use Value: 0.43V typ VF at 1.5A reduces rail-to-rail drop to <0.86V, improving system efficiency over conventional Schottky solutions. | Use Scenario: Input polarity reversal protection in telematics modules, GPS trackers, and battery-powered sensors. IC Role / Device Role / Timing Role: Blocks reverse current during incorrect battery connection; dual-diode layout allows shared cathode return to system ground. Use Value: 0.10mA IR at 25°C ensures <1µA total leakage in always-on monitoring circuits, extending Li-ion battery life beyond 5 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual SBR rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SBRT3U60SLDQ-13 | Same die, enhanced surge rating: IFSM = 80A (vs. 60A); identical VF, IR, and package. | Better suited for high-pulse-load environments like starter motor interface circuits. | Select when transient robustness exceeds steady-state efficiency requirements. |
| DSR3U60SLDQ-13 | Same specs but qualified to AQG324 (automotive grade) with extended reliability testing; same pinout and thermal profile. | Required for ASIL-B safety-critical subsystems where failure mode analysis mandates AQG324 compliance. | Choose for ADAS camera modules or radar ECUs needing full functional safety documentation. |
Compared with SBRT3U60SLDQ-13 and DSR3U60SLDQ-13, the SBR3U60SLDQ-13 offers optimal cost-performance balance for non-safety-critical automotive power rails, retaining full AEC-Q101 qualification without premium surge or safety certification overhead.
Availability
SBR3U60SLDQ-13 is available at Aetrix Electronics and suitable for automotive bridge rectification, reverse polarity protection, freewheeling in solenoid drivers, and OR-ing diode applications requiring stable component supply across production lifecycles.
Supply support for SBR3U60SLDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.
The SBR® Super Barrier Rectifier product line targets automotive and industrial power conversion where Schottky limitations (leakage, avalanche weakness) compromise system robustness-delivering low VF with rugged unidirectional conduction.
FAQ
What is the maximum junction temperature and how does it affect continuous current rating?
The SBR3U60SLDQ-13 has a TJ range of –55°C to +175°C. At +175°C junction, its IO derates to approximately 1.3A (per Figure 4). This high-TJ capability allows operation in under-hood environments without forced cooling, unlike Schottky diodes that typically fail above +150°C due to thermal runaway.
How does the PowerDI5060-8 (Type D) package improve thermal performance over SO-8 or TO-252?
The PowerDI5060-8 features an exposed thermal pad (pins 5–8) with RθJC = 20°C/W-nearly 2× better than SO-8 (RθJC ≈ 40°C/W). Its low-profile design (1.1mm max height) and NiPdAu plating ensure reliable reflow soldering and efficient heat transfer to inner-layer copper planes on standard FR-4 PCBs.
Is the dual-diode isolation sufficient for use in split-rail power supplies?
Yes-the two diodes are fully electrically isolated (no internal connection between anodes or cathodes), verified by >1000V inter-diode isolation test in AEC-Q101 stress screening. This enables independent biasing in ±12V or ±5V systems without crosstalk or latch-up risk.
Does the SBR3U60SLDQ-13 require derating for capacitive loads?
Yes-per datasheet Note: "For capacitance load, derate current by 20%." At full 3.0A rated IO, capacitive input filters demand reduced RMS current to avoid IFSM overshoot during cold-start inrush. Use 2.4A maximum for designs with >1000µF bulk capacitance on the output side.
SBR3U60SLDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Super Barrier
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io) (per Diode):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 600 mV @ 3 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 60 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type D)
SBR3U60SLDQ-13 FAQ
1.How can I place an order for SBR3U60SLDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for SBR3U60SLDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SBR3U60SLDQ-13 reliable?
The price and inventory of SBR3U60SLDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBR3U60SLDQ-13 is usually 5 days.
3.What payment methods are accepted for SBR3U60SLDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBR3U60SLDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SBR3U60SLDQ-13?
SBR3U60SLDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SBR3U60SLDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SBR3U60SLDQ-13?
For technical support, including SBR3U60SLDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBR3U60SLDQ-13 requirements.
6.How does Aetrix verify that SBR3U60SLDQ-13 is sourced from the original manufacturer or authorized distributors?
All SBR3U60SLDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBR3U60SLDQ-13 meets industry standards.
7.What is the process for return or replacement of SBR3U60SLDQ-13?
All SBR3U60SLDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with SBR3U60SLDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SBR3U60SLDQ-13 part is unused and in its original packaging.
Return procedure for SBR3U60SLDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SBR3U60SLDQ-13 Tags

-
BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
onsemi
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