Diodes Incorporated SBR40U45CT-G

Overview

SBR40U45CT-G from Diodes Incorporated is a 40A dual common-cathode Super Barrier Rectifier (SBR®) with 45V peak reverse voltage, 0.52V max forward voltage at 20A/25°C, and 0.6mA max reverse leakage at 45V/125°C - engineered for high-efficiency, high-temperature DC-DC converters and AC-DC adapters.

For engineers reviewing the SBR40U45CT-G datasheet, SBR40U45CT-G pinout, SBR40U45CT-G application, or SBR40U45CT-G equivalent, key selection criteria include ultra-low VF stability across temperature, rugged avalanche capability versus Schottky diodes, TO-220AB thermal resistance (2°C/W), dual-leg current rating (20A per leg), and RoHS/Green compliance.

Technical Context

This dual common-cathode rectifier integrates two independent 45V/20A SBR® die in a single TO-220AB package, enabling synchronous or interleaved operation in high-current buck-derived topologies. Its patented SBR technology replaces traditional Schottky junctions with a low-barrier metal-semiconductor structure that delivers superior avalanche energy handling (280A IFSM) without thermal runaway risk.

The device operates reliably from –65°C to +150°C with minimal VF drift (0.47V typ @ 25°C → 0.49V typ @ 125°C) and tightly controlled IR (0.2mA typ @ 25°C, 200mA max @ 125°C), making it suitable for thermally constrained power stages where leakage-induced thermal runaway must be avoided.

Key Specifications

Pinout & Package

Package: TO-220AB - Molded plastic case (UL 94V-0), matte tin-plated copper leadframe, 1.85g weight, designed for vertical PCB mounting with heatsink interface on tab side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current super barrier rectifier applications.

Compared with SBRT40U45CT-G, SBR40U45CT-G offers superior heatsink integration via TO-220AB tab and lower thermal resistance; versus MBR4045CTG, it delivers 25% lower VF and 3× lower IR at 125°C - critical for reliability in thermally aggressive deployments.

Availability

SBR40U45CT-G is available at Aetrix Electronics and suitable for DC-DC converters, AC-DC adapters, and industrial power supplies requiring stable component supply, long-lifecycle availability, and RoHS/Green compliance.

Supply support for SBR40U45CT-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SBR® product line targets high-efficiency power conversion systems requiring robust, temperature-stable rectification - specifically developed to replace Schottky diodes in demanding DC-DC, adapter, and telecom applications.

FAQ

Is SBR40U45CT-G pin-compatible with standard TO-220AB dual-diode packages?

Yes - it uses the industry-standard TO-220AB outline with Anode1–Cathode–Anode2 pin assignment (viewed from top). The cathode is internally connected to the metal tab, which must be electrically isolated from chassis ground unless referenced to system common. No PCB footprint modification is required versus MBR40xxCT or SBRT40xxCT variants.

What is the maximum continuous current per leg at 100°C ambient with a 2°C/W heatsink?

At TA = 100°C and TJ(max) = 150°C, allowable ΔT = 50°C. With RθJC = 2°C/W, maximum power dissipation per leg is 25W. At VF = 0.49V (typ @ 125°C), this supports ~51A per leg - however, IO rating is limited to 20A/leg by package current-carrying capacity and bondwire integrity per datasheet specification.

Does SBR40U45CT-G require derating for capacitive loads?

Yes - the datasheet specifies a 20% current derating for capacitive loads due to higher peak currents during charging transients. For example, the 20A per-leg rating becomes 16A when used with bulk capacitance exceeding 1000µF on the output of a flyback or forward converter.

How does the SBR® technology differ from conventional Schottky rectifiers in avalanche behavior?

SBR® uses a modified metal-semiconductor junction with enhanced carrier lifetime control, delivering 280A IFSM (vs. ~200A for comparable Schottky) and no second-breakdown failure mode. Unlike Schottky diodes, it sustains repeated surge events without parameter drift or catastrophic failure - verified per JEDEC JESD22-A114 test conditions.