Diodes Incorporated SBRT05U10LP-7B

Overview

SBRT05U10LP from Diodes Incorporated is a 10 V, 0.5 A trench super barrier rectifier (SBR®) in DFN1006-2 package, featuring ultra-low VF (0.39 V max at 0.5 A), 180 µA IR max at 10 V/25°C, and +150°C junction temperature rating. It serves as a freewheeling, polarity protection, or output rectification diode in compact DC-DC converters and high-efficiency SMPS.

For engineers reviewing the SBRT05U10LP datasheet, SBRT05U10LP pinout, SBRT05U10LP application, or SBRT05U10LP equivalent, key selection criteria include forward voltage drop at 0.5 A, reverse leakage stability up to 125°C, thermal resistance (236°C/W), and DFN1006-2 footprint compatibility with space-constrained PCB layouts.

Technical Context

This SBR device uses patented trench-based super barrier technology to achieve lower VF than Schottky diodes while maintaining superior reverse leakage control at elevated temperatures. Its soft, fast switching behavior minimizes EMI in high-frequency switching topologies.

The device operates across –65°C to +150°C, with thermal performance validated on FR-4 boards using minimum recommended pad layout. Junction capacitance is 1000 pF at 0 V and drops to ~100 pF at 5 V reverse bias (f = 1 MHz), supporting efficient high-speed rectification.

Key Specifications

Pinout & Package

Package: X1-DFN1006-2 - 1.0 mm × 0.6 mm, 0.25 mm nominal height, lead-free NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super barrier rectifier applications.

Compared with SBRT05U10LP, SBRT05U10LPS-7B offers identical performance in alternate packaging, while AP1010W5-7 trades 0.03 V higher VF for 2× current headroom-making it suitable for scalable power rail designs where margin matters more than absolute lowest loss at 0.5 A.

Availability

SBRT05U10LP is available at Aetrix Electronics and suitable for SMPS secondary rectification, reverse polarity protection, and DC-DC converter output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant green manufacturing.

Supply support for SBRT05U10LP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The Trench SBR® product line delivers ultra-low VF rectifiers optimized for high-frequency, high-temperature DC-DC conversion-targeting space-constrained, thermally demanding applications where Schottky limitations become critical.

FAQ

What is the maximum continuous forward current at +125°C ambient?

At +125°C ambient temperature, the SBRT05U10LP supports 250 mA average rectified current per Figure 3 (derating curve). This is determined by thermal limits: with RθJA = 236°C/W and TJ(max) = +150°C, the allowable ΔT is 25°C, permitting ~250 mA before exceeding junction temperature rating on standard FR-4 layout.

Does SBRT05U10LP have avalanche rating?

Yes-the datasheet explicitly states "Superior Reverse Avalanche Capability" as a key benefit. While no specific IAR or EAR value is published, this indicates robust single-pulse avalanche energy handling beyond standard SBR devices, making it suitable for inductive flyback clamping where transient voltage overshoot occurs.

Is the DFN1006-2 package compatible with standard reflow profiles?

Yes-SBRT05U10LP is qualified for lead-free reflow per JEDEC J-STD-020, with moisture sensitivity level 1. Its NiPdAu finish ensures reliable solderability using standard Pb-free peak profiles (260°C max, 20–40 sec above 217°C), and the 0.4 mm pitch allows compatibility with standard 0201-class stencil apertures.

How does its reverse leakage compare to conventional Schottky diodes at high temperature?

At +125°C and VR = 10 V, SBRT05U10LP exhibits ≤15 µA IR (vs. 180 µA at 25°C), significantly lower than typical Schottky diodes (>100 µA at 125°C). This stability stems from the super barrier structure's reduced thermionic emission, enabling reliable operation in hot environments like enclosed power supplies or automotive ECUs.