Diodes Incorporated SBRT20U50SLPQ-13

Overview

SBRT20U50SLPQ-13 from Diodes Incorporated is a 50 V, 20 A Trench Super Barrier Rectifier (SBR) in PowerDI5060-8 package, featuring 0.42 V typical forward voltage at 20 A and 0.5 mA max reverse leakage at 50 V/25°C. It delivers rugged avalanche capability (640 mJ), low thermal resistance (12 °C/W with heatsink), and AEC-Q101 qualification for automotive power rectification.

For engineers reviewing the SBRT20U50SLPQ-13 datasheet, SBRT20U50SLPQ-13 pinout, SBRT20U50SLPQ-13 application, or SBRT20U50SLPQ-13 equivalent, key selection criteria include high-temperature reverse leakage stability (≤100 µA at 125°C), ultra-low VF for efficiency-critical DC/DC outputs, and thermally robust PowerDI5060-8 mounting with bottom-side heatsink interface.

Technical Context

This Trench SBR replaces Schottky diodes in high-reliability automotive power rails where thermal runaway risk exists. Its patented trench structure enables superior unclamped inductive switching (UIS) performance-640 mJ single-pulse avalanche energy at TJ = 25°C with IAS = 14.5 A-while maintaining low VF and stable IR up to 150°C junction temperature.

The device operates across -55°C to +150°C, supports 200 A non-repetitive surge current (8.3 ms half-sine), and exhibits 48 ns reverse recovery time under IF = 0.5 A / IR = 1.0 A conditions. Its 350 pF capacitance at 50 V / 1 MHz suits high-frequency switching topologies requiring low switching loss.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced surface-mount package with bottom-side copper heat sink pad and 8-terminal configuration. All four anode pins must be electrically connected on PCB for optimal current sharing and thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature rectifier applications.

Compared with SBRT20U50D1-13, the SBRT20U50SLPQ-13 offers verified automotive qualification and tighter thermal resistance; versus SBRT15U50SLPQ-13, it provides 33% higher continuous current and 33% greater avalanche energy-critical for next-gen 48 V mild-hybrid rectification.

Availability

SBRT20U50SLPQ-13 is available at Aetrix Electronics and suitable for automotive DC/DC converters, engine control units, ADAS camera modules, and electric power steering auxiliary rails requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SBRT20U50SLPQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The SBRT series targets automotive power conversion with trench-based SBR technology-designed specifically to replace Schottky diodes in high-temperature, high-reliability rectification where thermal stability and avalanche robustness are mandatory.

FAQ

What is the maximum junction temperature and how is it validated?

The SBRT20U50SLPQ-13 has a rated operating junction temperature range of -55°C to +150°C, verified per AEC-Q101 stress test conditions including high-temperature operating life (HTOL) at 150°C for 1000 hours. Thermal characterization was performed on an aluminum substrate PCB (30 mm × 30 mm) with an attached heatsink (48 mm × 35 mm × 80 mm), confirming 12 °C/W RθJA under those conditions.

Is the PowerDI5060-8 package lead-free and RoHS compliant?

Yes. The SBRT20U50SLPQ-13 uses matte tin annealed over copper leadframe, meeting EU RoHS Directive 2015/863/EU (RoHS 3) with all applicable exemptions applied. It is also halogen- and antimony-free ("Green"), containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony compounds per Diodes' definition.

How does the device perform under transient surge conditions?

It supports 200 A non-repetitive peak forward surge current (IFSM) for 8.3 ms half-sine wave, and delivers 640 mJ single-pulse avalanche energy (EAS) at TJ = 25°C with IAS = 14.5 A and L = 8.5 mH. This enables reliable operation during load dump or inductive kick events common in automotive 12 V/24 V systems.

Can the four anode pins be used independently?

No. Per datasheet note, "All four anode pins must be electrically connected at the printed circuit board." They are internally tied to a common anode structure; independent routing would cause current imbalance, localized heating, and premature failure. PCB layout must implement low-impedance copper ties between pins 1–4.