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Diodes Incorporated SD103ATW-7-F

Part No.:
SD103ATW-7-F
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixSD103ATW-7-F.pdf
Description:
DIODE ARR SCHOT 40V 175MA SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:47,178

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Product details

Overview

SD103ATW-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode array containing three fully isolated Schottky diodes in a single SOT363 package, rated for 40 V peak repetitive reverse voltage, 350 mA forward continuous current per diode, and featuring low forward voltage drop (0.32 V typical at 5 mA), fast switching (10 ns reverse recovery time), and guard ring construction for transient protection. It is used in compact DC-DC converter output rectification, USB port ESD protection clamping, and low-voltage logic-level signal steering.

For engineers reviewing the SD103ATW-7-F datasheet, SD103ATW-7-F pinout, SD103ATW-7-F application, or SD103ATW-7-F equivalent, key selection criteria include per-diode forward voltage at 20–100 mA, leakage current at 30 V reverse bias, thermal resistance (500 °C/W), total capacitance (50 pF at 0 V), and SOT363 footprint compatibility with high-density PCB layouts.

Technical Context

This triple Schottky diode array integrates three independent anode-cathode junctions sharing only mechanical packaging-no internal connection-enabling flexible routing of discrete low-loss paths. Each diode exhibits low conduction loss due to metal-semiconductor junction design and fast turn-off enabled by majority-carrier transport, eliminating minority-carrier storage delay.

The SOT363 package supports reflow soldering with matte tin-plated leads compliant to MIL-STD-202 Method 208, and its 0.65 mm lead pitch and 2.0 × 2.225 mm body enable placement in space-constrained power management and interface circuits where thermal dissipation is managed via FR-4 pad layout per Diodes' recommended footprint.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum reverse voltage each diode withstands without breakdown; sets upper limit for clamping or blocking applications.
VF @ 5 mA0.32 V typical - Low forward drop minimizes conduction loss in low-voltage (<5 V) power rails and signal paths.
tRR10 ns - Fast recovery enables use in high-frequency (>1 MHz) switching converters and data-line transient suppression.
IR @ 30 V0.4 µA max - Ultra-low leakage preserves battery life in always-on sensor nodes and maintains signal integrity in high-impedance circuits.
CT @ 0 V50 pF - Junction capacitance impacts high-speed signal integrity; suitable for USB 2.0 and I²C bus clamping without excessive loading.
RθJA500 °C/W - Thermal resistance defines temperature rise per watt dissipated; requires controlled copper area for >100 mW operation.
IFM350 mA - Peak forward current rating per diode; derates to 263 mA when two or three diodes operate simultaneously.

Pinout & Package

SOT363 (Standard) package: 6-pin, 2.0 mm × 2.225 mm × 0.90 mm body height, 0.65 mm lead pitch, matte tin-plated leads, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1Anode of Diode 1Input node for first independent Schottky path; connects to source or signal line requiring low-loss forward conduction.
2Cathode of Diode 1Output node for Diode 1; ties to common rail or load; shared cathode configuration not present-fully isolated.
3Anode of Diode 2Second independent anode; enables dual-rail clamping or separate power domain rectification without crosstalk.
4Cathode of Diode 2Independent cathode return; allows individual biasing and avoids ground loop coupling between channels.
5Anode of Diode 3Third isolated anode; supports triple-redundant protection or multi-path signal routing in fault-tolerant designs.
6Cathode of Diode 3Third dedicated cathode; permits independent voltage referencing per diode, critical for mixed-supply systems.

Key Features

FeatureDesign Value
Guard ring constructionEnhances ruggedness against ESD and voltage transients without external TVS, enabling direct I/O protection in portable electronics.
Three fully isolated diodesEliminates inter-diode coupling; supports independent biasing, differential clamping, and multi-rail power sequencing.
Low VF (0.32 V @ 5 mA)Reduces forward conduction loss by >40% vs. standard silicon diodes, extending battery runtime in 3.3 V/1.8 V systems.
Lead-free & Halogen-freeComplies with RoHS 3 (2015/863/EU) and automotive change control requirements; supports PPAP-capable manufacturing.
Moisture Sensitivity Level 1Allows unlimited floor life before reflow; eliminates baking requirement and simplifies SMT line logistics.

Applications

USB 2.0 Data Line ProtectionMulti-Rail DC-DC Output Rectification

Use Scenario: Clamping ESD transients on D+ and D− lines while preserving signal integrity up to 480 Mbps.

IC Role / Device Role / Timing Role: Discrete Schottky clamp diode array providing bidirectional low-capacitance (<50 pF) voltage limiting.

Use Value: Prevents damage to USB PHY without adding jitter or insertion loss-enabled by 10 ns tRR and 0.32 V VF matching logic thresholds.

Use Scenario: Rectifying outputs of three independent buck converters supplying core, I/O, and analog rails in SoC power domains.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement in low-voltage (1.2–3.3 V), medium-current (≤350 mA) DC-DC stages.

Use Value: Reduces conduction loss versus MOSFET solutions in cost-sensitive designs where gate drive complexity is undesirable.

Logic-Level Signal SteeringAutomotive Body Control Module Inputs

Use Scenario: Isolating and OR-ing multiple microcontroller GPIOs driving a shared indicator LED or reset line.

IC Role / Device Role / Timing Role: Passive level-shifting and signal combining element using forward-biased Schottky junctions.

Use Value: Enables 1.8 V/3.3 V mixed-voltage interfacing without active translators-leakage <0.4 µA prevents false triggering.

Use Scenario: Protecting LIN bus and sensor inputs (e.g., door latch, seat position) against load dump and jump-start surges.

IC Role / Device Role / Timing Role: Transient voltage suppressor with guard ring-enhanced ruggedness for AEC-Q101 qualified systems.

Use Value: Withstands 40 V repetitive reverse stress and 1.0 A surge (8.3 ms) without degradation-validated for under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode array applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAT54CW-7-FSame SOT363 package; 30 V VRRM; higher VF (0.37 V @ 5 mA); 12 ns tRR.Limited to ≤30 V systems; less effective for 36 V automotive transients.Select when lower cost is prioritized over 40 V margin and ultra-low VF.
NSR0330P2T5GSingle-diode SOD-523; 30 V VRRM; 0.27 V VF @ 10 mA; no multi-diode integration.Requires three discrete placements; increases board area and assembly cost.Choose only if layout constraints prevent SOT363 use or per-diode thermal isolation is mandatory.

Compared with BAT54CW-7-F and NSR0330P2T5G, SD103ATW-7-F uniquely delivers 40 V blocking, lowest VF in its class, and triple-isolation in one footprint-making it optimal for space-constrained, multi-rail, and automotive-grade designs demanding robustness and efficiency.

Availability

SD103ATW-7-F is available at Aetrix Electronics and suitable for USB interface protection, multi-rail DC-DC converter rectification, and automotive body control module input conditioning requiring stable component supply across production lifecycles.

Supply support for SD103ATW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' Schottky Diode Array product line, engineered for high-density power management and signal integrity applications where low VF, fast switching, and multi-channel isolation are critical in consumer, computing, and automotive electronics.

FAQ

What is the maximum simultaneous current rating when all three diodes are conducting?

Per datasheet Note 5, the maximum forward continuous current per diode drops to 75% of the single-diode rating (350 mA) when two or three diodes operate concurrently. Thus, each diode is rated for 263 mA under full-array conduction, ensuring thermal limits are maintained within the 200 mW total package power dissipation.

Does SD103ATW-7-F meet AEC-Q101 qualification?

No-SD103ATW-7-F is not AEC-Q101 qualified. The datasheet explicitly states that automotive-qualified versions require specific change control, PPAP capability, and IATF 16949 manufacturing; this part is intended for commercial and industrial use unless explicitly designated otherwise by Diodes Incorporated.

Can SD103ATW-7-F replace BAT54 series diodes in existing SOT363 layouts?

Yes-SD103ATW-7-F shares identical SOT363 mechanical dimensions, pad layout, and lead finish with BAT54CW-7-F. However, its higher 40 V VRRM and lower VF provide performance headroom; verify circuit voltage margins and thermal derating when substituting in legacy designs originally specified for 30 V devices.

How does the guard ring construction improve transient robustness?

The guard ring structure surrounds the active Schottky junction to distribute electric field stress during fast transients, reducing localized avalanche and preventing premature breakdown. This extends survivability against IEC 61000-4-2 ESD events and ISO 7637-2 load-dump pulses without requiring additional TVS components.

SD103ATW-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
3 Independent
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
175mA
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
10 ns
Current - Reverse Leakage @ Vr:
5 µA @ 30 V
Operating Temperature - Junction:
-55°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

SD103ATW-7-F FAQ

1.How can I place an order for SD103ATW-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for SD103ATW-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SD103ATW-7-F reliable?

The price and inventory of SD103ATW-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SD103ATW-7-F is usually 5 days.

3.What payment methods are accepted for SD103ATW-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SD103ATW-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SD103ATW-7-F?

SD103ATW-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SD103ATW-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SD103ATW-7-F?

For technical support, including SD103ATW-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SD103ATW-7-F requirements.

6.How does Aetrix verify that SD103ATW-7-F is sourced from the original manufacturer or authorized distributors?

All SD103ATW-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SD103ATW-7-F meets industry standards.

7.What is the process for return or replacement of SD103ATW-7-F?

All SD103ATW-7-F units undergo pre-shipment inspection (PSI). If there is an issue with SD103ATW-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SD103ATW-7-F part is unused and in its original packaging.

Return procedure for SD103ATW-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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