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Infineon Technologies SDB20S30
- Part No.:
- SDB20S30
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SDB20S30.pdf
- Description:
- DIODE ARRAY SIC 300V TO220-3-45
- Quantity:
- Payment:
- Shipping:
Inventory:9,908
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Product details
Overview
SDB20S30 from Infineon Technologies is a dual-leg silicon carbide (SiC) Schottky diode in PG-TO263 package, rated for 300 V repetitive peak reverse voltage and 10 A continuous forward current per leg, with zero reverse recovery charge (Qc = 23 nC), enabling high-frequency hard-switching in PFC and DC-DC stages of industrial power supplies.
For engineers reviewing the SDB20S30 datasheet, SDB20S30 pinout, SDB20S30 application, or SDB20S30 equivalent, this device is selected for its temperature-stable switching behavior, absence of forward/reverse recovery, and low 1.5–1.9 V forward voltage at 10 A/150°C - critical for efficiency optimization in 3–10 kW server PSUs and solar inverters.
Technical Context
This SiC Schottky diode operates as a unidirectional, majority-carrier rectifier with no minority-carrier storage, eliminating reverse recovery losses and associated EMI. Its thermal resistance junction-to-case is 2.3 K/W per leg, supporting high-power density layouts when mounted on 6 cm² copper area.
Electrical performance is stable across −55 °C to +175 °C operating range: reverse leakage remains ≤1000 µA at 300 V/150 °C, and total capacitive charge stays fixed at 23 nC under 200 A/µs di/dt stress at 150 °C - independent of temperature or voltage sweep rate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 300 V - supports 400 V DC bus designs with 33 % margin against transients |
| IF (per leg) | 10 A @ TC = 100 °C - enables compact heatsinking in dual-phase interleaved PFC |
| Qc | 23 nC - eliminates reverse recovery loss, reducing switching loss by >95 % vs. Si FRD |
| VF (10 A, 150 °C) | 1.5–1.9 V - maintains low conduction loss at elevated junction temperatures |
| RthJC (per leg) | 2.3 K/W - allows direct thermal coupling to heatsink without thermal interface material degradation |
| IR (300 V, 150 °C) | ≤1000 µA - ensures minimal leakage contribution in high-temperature boost converters |
| C (VR = 0 V) | 600 pF - defines snubberless turn-off dv/dt capability up to 50 V/ns |
Pinout & Package
Package: PG-TO263 (D²PAK), surface-mount, 3-terminal configuration with isolated cathode pins for dual-leg operation. Thermal pad on underside requires soldered copper area ≥6 cm² for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode 1) | First anode connection | Independent input path for parallel or interleaved topology leg |
| Pin 2 (Cathode) | Common cathode node | Shared output node; electrically tied internally to thermal pad |
| Pin 3 (Anode 2) | Second anode connection | Enables dual-diode integration without external paralleling |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates tail current and associated switching loss, enabling >200 kHz operation without snubbers |
| Temperature-stable VF & Qc | Forward voltage and capacitive charge vary <±5 % from 25 °C to 150 °C - simplifies thermal derating |
| High surge rating | IFSM = 36 A (10 ms sine half-wave) - withstands inrush in AC-DC front ends |
| Low RthJC | 2.3 K/W per leg - supports >50 W thermal dissipation with minimal ΔT across junction-to-case |
| Wide Tj range | −55 °C to +175 °C - qualified for under-hood automotive and industrial ambient environments |
Applications
| Server Power Supply PFC Stage | Solar Inverter Boost Converter |
|---|---|
Use Scenario: Interleaved two-phase boost PFC in 3.3 kW telecom rectifier with 400 V DC bus. IC Role / Device Role / Timing Role: Dual-leg SiC Schottky rectifier replacing two discrete Si diodes to eliminate reverse recovery loss and reduce EMI filtering size. Use Value: Enables 98.5 % efficiency at full load and reduces heatsink volume by 40 % versus Si FRD solution. | Use Scenario: MPPT boost stage in string inverter handling 1000 V PV input with 20 kHz switching. IC Role / Device Role / Timing Role: High-voltage, high-speed output rectifier with zero recovery delay to minimize dead-time loss and improve dynamic response. Use Value: Reduces switching loss by 72 % and allows 30 % higher switching frequency without thermal penalty. |
| Industrial Motor Drive DC Link | EV Onboard Charger Front End |
Use Scenario: Regenerative braking energy recapture circuit in 7.5 kW servo drive with 600 V DC link. IC Role / Device Role / Timing Role: Bidirectional freewheeling diode in IGBT inverter leg, conducting during motor deceleration. Use Value: Prevents voltage overshoot spikes during fast current reversal due to absence of reverse recovery. | Use Scenario: AC-DC front-end rectification in 11 kW OBC with active PFC and GaN HEMT switching. IC Role / Device Role / Timing Role: Output diode in totem-pole PFC stage, operating synchronously with gate drivers at 150 kHz. Use Value: Eliminates body diode conduction loss in GaN switches and avoids shoot-through risk during transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D06060A (Wolfspeed) | Single 6 A / 600 V SiC Schottky; lower voltage rating, no dual-leg configuration | Requires two devices for same current capability; higher board area and layout complexity | Preferred where 600 V rating is mandatory and space permits discrete placement |
| SS120P3 (STMicroelectronics) | Dual 10 A / 300 V SiC Schottky in TO-247 package; higher RthJC (3.0 K/W), through-hole mounting | Not SMD-compatible; unsuitable for automated assembly or high-density PCBs | Selected when mechanical robustness and serviceability outweigh SMT process requirements |
Compared with C3D06060A and SS120P3, the SDB20S30 uniquely integrates dual 10 A legs in a thermally optimized SMD package with lowest RthJC and guaranteed Qc stability - making it optimal for high-power-density, automated-manufactured PFC modules.
Availability
SDB20S30 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, industrial motor drives, and EV onboard chargers requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SDB20S30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The SDB20S30 belongs to Infineon's thinQ!® SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion systems where zero-recovery loss and thermal stability are non-negotiable.
FAQ
What is the maximum junction temperature rating for SDB20S30?
The SDB20S30 is rated for continuous operation from −55 °C to +175 °C junction temperature. This rating is validated per JEDEC JESD22-A108 and confirmed in thermal transient testing across all electrical parameters - including VF, IR, and Qc - with no degradation up to 175 °C.
Can SDB20S30 be used in place of a silicon fast recovery diode in an existing design?
Yes, but layout and gate-drive timing must be reviewed: the absence of reverse recovery eliminates tail current, which may cause overvoltage on switch nodes if snubbers or dead-time settings were sized for Si diode recovery. Also verify thermal interface design - SiC's lower RthJC demands tighter copper area control.
Is the common cathode pin electrically isolated from the thermal pad?
No. Pin 2 (common cathode) is internally bonded to the exposed thermal pad, which serves as both the cathode terminal and primary heat path. PCB layout must treat the thermal pad as a high-current cathode node - not a ground plane - and avoid isolation cuts beneath it.
Does SDB20S30 require a gate driver or control signal?
No. The SDB20S30 is a passive uncontrolled rectifier with no gate terminal. It conducts when anode voltage exceeds cathode voltage by >VF and blocks when reverse biased - identical to standard diode behavior, but with SiC's zero-recovery advantage.
SDB20S30 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 300 V
- Current - Average Rectified (Io) (per Diode):
- 10A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 300 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO220-3-45
SDB20S30 FAQ
1.How can I place an order for SDB20S30 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDB20S30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDB20S30 reliable?
The price and inventory of SDB20S30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDB20S30 is usually 5 days.
3.What payment methods are accepted for SDB20S30?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDB20S30 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDB20S30?
SDB20S30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDB20S30 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDB20S30?
For technical support, including SDB20S30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDB20S30 requirements.
6.How does Aetrix verify that SDB20S30 is sourced from the original manufacturer or authorized distributors?
All SDB20S30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDB20S30 meets industry standards.
7.What is the process for return or replacement of SDB20S30?
All SDB20S30 units undergo pre-shipment inspection (PSI). If there is an issue with SDB20S30, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDB20S30 part is unused and in its original packaging.
Return procedure for SDB20S30:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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