Diodes Incorporated SDM02M30DCP3-7
- Part No.:
- SDM02M30DCP3-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 3-XFDFN
- Datasheet:
-
SDM02M30DCP3-7.pdf
- Description:
- DIODE ARR SCHOT 30V X3-DSN1006-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SDM02M30DCP3 from Diodes Incorporated is a 30V dual common-cathode Schottky barrier diode optimized for low leakage (2 µA @ 30V), low forward voltage (750 mV max @ 200 mA), and ultra-compact X3-DSN1006-3 package (0.6 mm² footprint, 0.275 mm profile). It serves as a reverse polarity protection and boost diode in space-constrained portable power rails.
For engineers reviewing the SDM02M30DCP3 datasheet, SDM02M30DCP3 pinout, SDM02M30DCP3 application, or SDM02M30DCP3 equivalent, key selection criteria include its 2 µA max reverse leakage at 30 V, 7 pF junction capacitance at 1 V, 2.99 ns reverse recovery time, thermal resistance of 200 °C/W, and compatibility with high-density PCB layouts requiring minimal board area.
Technical Context
This dual Schottky diode integrates two independent anode terminals sharing a single cathode terminal in a monolithic die structure. Its low RθJA (200 °C/W) enables operation up to +150 °C junction temperature without derating under typical FR-4 mounting conditions.
The device delivers soft, fast switching with tRR = 2.99 ns and CJ = 7 pF at 1 V, supporting high-frequency DC-DC converter topologies where low stored charge and minimal capacitive loading are critical for efficiency and EMI control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 30 V - Maximum reverse blocking voltage before breakdown; suitable for 24 V system inputs with margin. |
| IO (total) | 400 mA - Continuous average current per diode pair; supports compact USB-C PD auxiliary power paths. |
| VF max | 750 mV @ 200 mA - Low conduction loss reduces thermal load in battery-fed applications. |
| IR max | 2 µA @ 30 V - Enables multi-year battery life in always-on IoT sensors by minimizing standby drain. |
| CJ | 7 pF @ 1 V - Limits high-frequency coupling in RF-adjacent power domains and improves switching node stability. |
| tRR | 2.99 ns - Enables clean turn-off in >1 MHz synchronous rectifiers without voltage spikes. |
| RθJA | 200 °C/W - Allows direct mounting on small copper pads without thermal vias in wearables. |
Pinout & Package
Package: X3-DSN1006-3 - ultra-thin, lead-free, 3-terminal surface-mount package with NiAu bump terminations; 0.275 mm height, 1.00 × 0.60 mm outline, 0.6 mm² footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input path for first diode; connects to source rail in reverse protection configuration. |
| Pin 2 | Cathode (common) | Shared cathode node; ties to system ground or output rail; requires low-inductance connection. |
| Pin 3 | Anode 2 | Input path for second diode; enables dual-input OR-ing or independent boost stage routing. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm² footprint | Reduces PCB area vs. SOT-23 by >70%, enabling placement beneath connectors or near ICs. |
| 0.275 mm profile | Permits use in ultra-thin devices (e.g., smart badges, hearing aids) where Z-height is constrained. |
| Low leakage (2 µA) | Extends shelf life and runtime in coin-cell-powered asset trackers and BLE beacons. |
| Soft switching behavior | Minimizes EMI generation during turn-off, easing EMC compliance in medical wearables. |
| NiAu bump terminations | Enables reliable reflow soldering on fine-pitch pads without voiding or dewetting. |
Applications
| USB Power Delivery Protection | Wireless Charging Receiver |
|---|---|
Use Scenario: Prevents reverse current flow from VBUS to dead battery or faulty port during hot-plug events in USB-C accessories. IC Role / Device Role / Timing Role: Reverse polarity protection diode placed between connector and buck converter input. Use Value: 2 µA leakage preserves battery charge over months of standby; 750 mV VF limits dropout to <1% at 200 mA. | Use Scenario: Blocks reverse current from Qi receiver coil output into charging IC when transmitter is inactive. IC Role / Device Role / Timing Role: Synchronous rectifier freewheeling diode in full-wave rectifier stage. Use Value: 2.99 ns tRR prevents shoot-through in 200–500 kHz resonant converters; 7 pF CJ avoids detuning of LC tank. |
| BLE Beacon Power Path | Industrial Sensor Node |
Use Scenario: OR-ing diode for dual power sources (coin cell + energy harvester) in ultra-low-power location tags. IC Role / Device Role / Timing Role: Common-cathode dual diode enabling seamless source selection without controller intervention. Use Value: Dual-anode layout eliminates need for two discrete diodes; 0.6 mm² saves >0.8 mm² board area vs. two DFN0603s. | Use Scenario: Input protection for 24 V loop-powered field transmitters exposed to transient surges. IC Role / Device Role / Timing Role: Blocking diode isolating analog front-end from supply rail during fault conditions. Use Value: 30 V VRRM provides margin against 24 V line transients; 200 °C/W RθJA sustains operation at +85 °C ambient without heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-30 | Higher VF (850 mV @ 200 mA), larger SOD-323 package (1.7 mm²), 5 µA IR | Less suitable for sub-1 mm² layouts; higher leakage reduces battery life in always-on nodes. | Choose only if legacy SOD-323 footprint reuse is required and leakage tolerance >5 µA. |
| NSR20F30NXT5G | Same X3-DSN1006-3 package, but 300 mV lower VF (450 mV @ 200 mA); 10 µA IR | Better efficiency in high-current boost stages, but 5× higher leakage compromises long-term storage. | Select when peak efficiency > battery shelf life; verify IR impact on 10+ year deployments. |
Compared with RB050M-30 and NSR20F30NXT5G, SDM02M30DCP3 uniquely balances ultra-low leakage (2 µA), compact size (0.6 mm²), and moderate VF (750 mV), making it optimal for battery-critical, space-constrained portable designs where both standby life and board area are tightly constrained.
Availability
SDM02M30DCP3 is available at Aetrix Electronics and suitable for USB-C accessory protection, wireless charging receivers, BLE beacon power management, and industrial sensor node input isolation requiring stable component supply across production lifecycles.
Supply support for SDM02M30DCP3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The SDM02M30DCP3 belongs to Diodes' ultra-compact Schottky diode product line, engineered specifically for miniaturized portable electronics where leakage, footprint, and thermal performance are co-constrained design parameters.
FAQ
What is the maximum continuous current rating per diode in SDM02M30DCP3?
The SDM02M30DCP3 is rated for 400 mA average rectified output current total across both diodes. Each diode supports up to 200 mA continuous DC current under standard FR-4 mounting conditions with no forced airflow, based on thermal derating curves in DS39324 Rev. 5–2.
Does SDM02M30DCP3 have AEC-Q200 qualification for automotive use?
No-SDM02M30DCP3 is not AEC-Q200 qualified. The datasheet explicitly states that automotive-grade versions require separate qualification (AEC-Q100/101/200), PPAP capability, and IATF 16949 manufacturing; this part is intended for commercial portable and industrial applications only.
How is polarity identified on the SDM02M30DCP3 package?
Polarity is marked by a cathode bar on the top surface aligned with Pin 2 (common cathode). The marking matches the top-view diagram in DS39324: Pin 1 (anode 1) and Pin 3 (anode 2) flank the central cathode bar, which overlays Pin 2. No silkscreen or laser marking is used-only the physical bar feature.
Can SDM02M30DCP3 replace a single discrete Schottky diode in a design?
Yes-but only if the circuit uses only one of the two anodes and ties the unused anode to cathode or leaves it floating. Using only one diode forfeits the dual functionality but retains all electrical specs (VF, IR, CJ) for that channel; layout must still accommodate the 3-pin footprint.
SDM02M30DCP3-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io) (per Diode):
- 400mA
- Voltage - Forward (Vf) (Max) @ If:
- 750 mV @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 2.99 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X3-DSN1006-3
SDM02M30DCP3-7 FAQ
1.How can I place an order for SDM02M30DCP3-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDM02M30DCP3-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDM02M30DCP3-7 reliable?
The price and inventory of SDM02M30DCP3-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDM02M30DCP3-7 is usually 5 days.
3.What payment methods are accepted for SDM02M30DCP3-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDM02M30DCP3-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDM02M30DCP3-7?
SDM02M30DCP3-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDM02M30DCP3-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDM02M30DCP3-7?
For technical support, including SDM02M30DCP3-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDM02M30DCP3-7 requirements.
6.How does Aetrix verify that SDM02M30DCP3-7 is sourced from the original manufacturer or authorized distributors?
All SDM02M30DCP3-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDM02M30DCP3-7 meets industry standards.
7.What is the process for return or replacement of SDM02M30DCP3-7?
All SDM02M30DCP3-7 units undergo pre-shipment inspection (PSI). If there is an issue with SDM02M30DCP3-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDM02M30DCP3-7 part is unused and in its original packaging.
Return procedure for SDM02M30DCP3-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SDM02M30DCP3-7 Tags

-
BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

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BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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