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Diodes Incorporated SDM02U30LP3Q-7B

Part No.:
SDM02U30LP3Q-7B
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
0201 (0603 Metric)
Datasheet:
AetrixSDM02U30LP3Q-7B.pdf
Description:
Schottky Diode X3-DFN0603-2 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,632

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Product details

Overview

SDM02U30LP3Q from Diodes Incorporated is an ultra-small surface-mount Schottky barrier diode optimized for low forward voltage (0.37 V max at 10 mA) and low reverse leakage (7 µA max at 10 V), housed in the X3-DFN0603-2 package (0.18 mm² footprint, 0.35 mm profile). It serves as a blocking or freewheeling diode in space-constrained portable electronics requiring efficient reverse voltage protection and minimal power loss.

For engineers reviewing the SDM02U30LP3Q datasheet, SDM02U30LP3Q pinout, SDM02U30LP3Q application, or SDM02U30LP3Q equivalent, key selection criteria include its 30 V peak reverse voltage rating, 100 mA average forward current capability, AEC-Q101 qualification for automotive use, and ultra-low-profile packaging suitable for high-density PCB layouts in battery-powered devices.

Technical Context

This Schottky diode employs a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve sub-0.4 V forward conduction at 10 mA while maintaining <7 µA leakage at 10 V reverse bias - critical for extending battery life in always-on subsystems. Its thermal resistance of 500 °C/W (junction-to-ambient, FR-4 board) and -55 °C to +150 °C operating range support reliable operation in compact, thermally limited environments.

The device is rated for 2 A non-repetitive surge current (8.33 ms half-sine), enabling robust transient handling during power-up or inductive switching events. Total capacitance is 1–10 pF across 0–30 V reverse bias (f = 1 MHz), making it suitable for high-frequency clamping and signal-level rectification without significant capacitive loading.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 30 V - Maximum repetitive reverse voltage before breakdown; defines safe DC blocking limit in power rail protection.
IO 100 mA - Continuous average forward current; supports low-power LED backlighting and sensor biasing circuits.
VF (max) 0.37 V @ 10 mA - Minimizes conduction loss in battery-fed paths; reduces heat generation in 0.18 mm² footprint.
IR (max) 7 µA @ 10 V - Enables >1-year standby battery life in coin-cell–powered IoT sensors and wearables.
RθJA 500 °C/W - Requires careful thermal pad layout per Diodes' recommended footprint to avoid junction overheating at full load.
Package X3-DFN0603-2 - 0.62 × 0.32 mm body, 0.35 mm max height; compatible with standard 0201 reflow profiles and AOI inspection.

Pinout & Package

Encapsulated in the X3-DFN0603-2 package: ultra-compact 2-terminal leadless plastic case with cathode bar marking on top surface. Terminals are matte tin-plated copper leadframe, solderable per MIL-STD-202 Method 208.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry point Connected to higher-potential node (e.g., battery+, input rail); no internal connection to package pad.
Cathode (marked with bar) Forward current exit / reverse blocking terminal Connected to load or ground; exposed thermal pad is electrically tied to cathode - must be routed accordingly.

Key Features

Feature Design Value
0.18 mm² footprint 70% smaller than DFN1006/SOD923 - enables routing under fine-pitch BGAs and dense RF modules.
0.35 mm max profile 30% thinner than DFN1006 - allows stacking of multiple PCB layers or integration into slim bezel assemblies.
0.37 V VF (max) Reduces forward power loss by ~40% vs. typical silicon diodes at 10 mA - critical for microampere-quiescent systems.
AEC-Q101 qualified Validated for automotive cabin electronics (e.g., infotainment displays, sensor interfaces) with PPAP documentation support.
Halogen & antimony free Meets IEC 61249-2-21 "Green" requirements (<900 ppm Br/Cl, <1000 ppm Sb) for eco-compliant consumer and medical end equipment.

Applications

Reverse Voltage Protection LED Backlighting

Use Scenario: Preventing damage from reversed battery insertion or hot-swap transients in USB-C powered accessories.

IC Role / Device Role / Timing Role: Unidirectional current gate placed between power source and PMIC input.

Use Value: 30 V VRRM withstands 5 V rail surges; 7 µA IR avoids measurable drain on lithium coin cells during storage.

Use Scenario: Driving white LEDs in smartphone front-panel keypads and status indicators.

IC Role / Device Role / Timing Role: Current-limiting series diode in constant-current LED string path.

Use Value: 0.37 V VF minimizes voltage headroom loss, enabling full brightness from 2.8 V Li-ion cells.

Clamping Protection Freewheeling Diode

Use Scenario: Suppressing inductive kickback from small solenoids or relay coils in automotive door modules.

IC Role / Device Role / Timing Role: Fast-turn-off clamp connected across coil terminals.

Use Value: Sub-1 ns reverse recovery time (inherent to Schottky structure) prevents voltage overshoot beyond 30 V rating.

Use Scenario: Recirculating current in low-duty-cycle DC-DC converter synchronous rectifiers.

IC Role / Device Role / Timing Role: Low-loss freewheeling path during high-side FET off-time.

Use Value: 100 mA IO rating supports up to 500 kHz switching with <10 mW conduction loss at 10 mA average load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
RB050M-30TE25 (ROHM) Higher VF (0.45 V max @ 10 mA), larger SOD-523 (1.2 mm²) footprint, same 30 V VRRM. Less suitable for ultra-thin wearables but offers higher surge rating (3 A IFSM). Select when surge robustness outweighs size constraints and 80 mV higher VF is acceptable.
NSR0230HT1G (onsemi) Same X3-DFN0603-2 package, identical 30 V/100 mA ratings, but VF = 0.42 V max @ 10 mA and IR = 10 µA @ 10 V. Slightly higher leakage limits use in >5-year shelf-life medical sensors. Choose if supply chain diversification is prioritized and 50 mV VF penalty is tolerable.

Compared with RB050M-30TE25 and NSR0230HT1G, SDM02U30LP3Q delivers the lowest VF and smallest footprint among 30 V Schottky diodes in production, making it optimal for next-generation miniaturized battery management and display subsystems where every micron and millivolt matters.

Availability

SDM02U30LP3Q is available at Aetrix Electronics and suitable for reverse voltage protection, LED backlighting, clamping protection, and freewheeling diode applications requiring stable component supply, automotive-grade reliability, and ultra-miniature packaging.

Supply support for SDM02U30LP3Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SDM02U30LP3Q belongs to Diodes' ultra-compact Schottky diode product line, engineered specifically for space- and power-constrained portable and automotive electronics where minimal forward drop and leakage are mandatory.

FAQ

Is SDM02U30LP3Q suitable for automotive applications?

Yes - it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Its -55 °C to +150 °C operating temperature range, 30 V VRRM, and low leakage meet requirements for cabin electronics such as display biasing, sensor interface protection, and LED driver circuits in passenger vehicles.

What is the thermal pad connection on the X3-DFN0603-2 package?

The exposed thermal pad on the bottom of the X3-DFN0603-2 package is electrically connected to the cathode terminal. It must be soldered to a PCB copper pour tied to the cathode net to ensure proper thermal dissipation and electrical integrity - not left floating or grounded independently.

Does SDM02U30LP3Q have a specified reverse recovery time (trr)?

No - as a Schottky barrier diode, it exhibits majority-carrier conduction with no minority-carrier storage delay. Its effective switching is limited only by junction capacitance (1–10 pF) and package inductance, enabling sub-nanosecond turn-off behavior essential for high-frequency clamping and RF decoupling.

Can SDM02U30LP3Q replace a standard silicon diode in a 5 V USB power path?

Yes - with 30 V VRRM and 0.37 V VF, it provides superior efficiency over 1N4148 or BAS16 in 5 V paths, reducing voltage drop by ~0.4 V and conduction loss by >60%. However, verify that system-level reverse leakage tolerance accommodates its 7 µA max IR at 10 V.

SDM02U30LP3Q-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
0201 (0603 Metric)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
100mA
Voltage - Forward (Vf) (Max) @ If:
370 mV @ 10 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
4 µA @ 30 V
Capacitance @ Vr, F:
-
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X3-DFN0603-2
Operating Temperature - Junction:
-55°C ~ 150°C

SDM02U30LP3Q-7B FAQ

1.How can I place an order for SDM02U30LP3Q-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for SDM02U30LP3Q-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDM02U30LP3Q-7B reliable?

The price and inventory of SDM02U30LP3Q-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDM02U30LP3Q-7B is usually 5 days.

3.What payment methods are accepted for SDM02U30LP3Q-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDM02U30LP3Q-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDM02U30LP3Q-7B?

SDM02U30LP3Q-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDM02U30LP3Q-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDM02U30LP3Q-7B?

For technical support, including SDM02U30LP3Q-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDM02U30LP3Q-7B requirements.

6.How does Aetrix verify that SDM02U30LP3Q-7B is sourced from the original manufacturer or authorized distributors?

All SDM02U30LP3Q-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDM02U30LP3Q-7B meets industry standards.

7.What is the process for return or replacement of SDM02U30LP3Q-7B?

All SDM02U30LP3Q-7B units undergo pre-shipment inspection (PSI). If there is an issue with SDM02U30LP3Q-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDM02U30LP3Q-7B part is unused and in its original packaging.

Return procedure for SDM02U30LP3Q-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SDM02U30LP3Q-7B Tags

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