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Diodes Incorporated SDM1L30BLP-13
- Part No.:
- SDM1L30BLP-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Bridge Rectifiers
- Package:
- 4-VDFN
- Datasheet:
-
SDM1L30BLP-13.pdf
- Description:
- BRIDGE RECT 1P 30V 1A VDFN5060-4
- Quantity:
- Payment:
- Shipping:
Inventory:6,158
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Product details
Overview
SDM1L30BLP-13 from Diodes Incorporated is a 1.0A surface-mount Schottky bridge rectifier in V-DFN5060-4 package, rated for 30V peak repetitive reverse voltage, 0.42V max forward voltage at 1.0A, and 1.0mA max leakage current at 30V - engineered specifically for wireless charging receiver circuits where low-loss AC-to-DC conversion and EMI-sensitive operation are critical.
For engineers reviewing the SDM1L30BLP-13 datasheet, SDM1L30BLP-13 pinout, SDM1L30BLP-13 application, or SDM1L30BLP-13 equivalent, key selection criteria include soft-switching behavior for EMI reduction, thermal resistance of 15°C/W (junction-to-case), compact 5.0 × 6.0 mm footprint, and AEC-Q101 qualification for reliability-critical portable power systems.
Technical Context
This Schottky bridge integrates four diodes in a single monolithic die with guard ring construction to suppress transients and improve ruggedness. Its soft switching characteristic arises from controlled minority carrier lifetime and optimized junction capacitance (90 pF at 30 V), minimizing high-frequency ringing during turn-off.
The device operates across –55°C to +150°C and supports 50A non-repetitive surge current (8.3 ms half-sine), enabling robust handling of wireless power coil transient spikes. Thermal performance is validated on a polyimide PCB with minimum recommended pad layout per AP02001.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 30 V - Maximum reverse blocking capability without breakdown in wireless charging rectification stage |
| IO | 1.0 A - Continuous average forward current rating under standard thermal conditions |
| VF Max | 0.42 V @ 1.0A - Low conduction loss enabling >92% efficiency in 5W–15W Qi receiver designs |
| IR Max | 1.0 mA @ 30V - Minimal leakage preserves standby power budget in battery-backed receivers |
| CT | 90 pF @ 30V - Controlled junction capacitance reduces RF noise coupling into adjacent NFC or Bluetooth antennas |
| RθJC | 15 °C/W - Enables direct thermal path to PCB copper, supporting 1.2W dissipation with <18°C rise above case |
| IFSM | 50 A - Withstands short-duration coil resonance surges without degradation |
Pinout & Package
Package: V-DFN5060-4 - 5.0 mm × 6.0 mm × 0.8 mm low-profile, lead-free, halogen-free molded plastic package with exposed thermal pad; UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode 1) | AC input terminal (bridge input) | Connects to resonant tank secondary winding; symmetrical with Pin 4 for balanced AC feed |
| 2 (Cathode) | DC output (+) | Delivers rectified positive rail to charging IC or battery management circuit |
| 3 (Exposed Pad) | Thermal & electrical ground | Must be soldered to ≥25 mm² copper pour for thermal conduction and EMI shielding |
| 4 (Anode 2) | AC input terminal (bridge input) | Second AC input node; tied internally to Pin 1 in full-wave configuration |
Key Features
| Feature | Design Value |
|---|---|
| Soft switching characteristic | Minimizes high-frequency voltage overshoot and dV/dt-induced EMI in Qi-compliant 110–205 kHz wireless power receivers |
| Guard ring die construction | Improves surge immunity against ESD and coil flyback transients up to ±8 kV HBM |
| Low profile (0.8 mm height) | Enables integration into <7 mm-thick smartphones and wearables without compromising mechanical clearance |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTGB, and UHAST |
| Lead-free & "Green" compliance | Meets RoHS 2, JEDEC J-STD-020 Level 1, and Diodes Inc.'s halogen/antimony-free specifications |
Applications
| Wireless Charging Receiver | USB-C Power Delivery Snubber |
|---|---|
Use Scenario: Full-wave rectification of 110–205 kHz AC from wireless power transfer coil in smartphone or earbud charging case. IC Role / Device Role / Timing Role: Schottky bridge rectifier converting high-frequency AC to regulated DC bus for charging IC input. Use Value: 0.42 V VF enables >93% rectifier efficiency at 1 A, reducing thermal load on sealed enclosure PCBs. | Use Scenario: Clamping and snubbing voltage spikes on USB-C CC lines during hot-plug events in multi-port PD controllers. IC Role / Device Role / Timing Role: Bidirectional transient suppression element leveraging low-capacitance (90 pF) and fast recovery. Use Value: Guard ring structure withstands repeated 100 V/μs transients without parametric shift, extending system field life. |
| Portable Medical Sensor Hub | Industrial IoT Energy Harvester |
Use Scenario: AC-to-DC conversion of piezoelectric or RF energy harvesting output in batteryless wearable health monitors. IC Role / Device Role / Timing Role: Ultra-low-leakage (1 mA @ 30 V) rectifier preserving microamp-level harvested current. Use Value: Sub-1 mA IR ensures >85% of nanoamp–microamp harvest current reaches storage capacitor. | Use Scenario: Rectifying low-amplitude, high-impedance AC from vibration-based generators in predictive maintenance sensors. IC Role / Device Role / Timing Role: High-sensitivity bridge with soft switching to avoid false triggering of downstream comparators. Use Value: Controlled dV/dt limits capacitive coupling noise into 16-bit ADC reference paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky bridge rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SB130-TB | DO-27 through-hole package; 30 V / 1 A; VF = 0.55 V @ 1 A; no AEC-Q101 qualification | Not suitable for automated SMT assembly or space-constrained wireless charging PCBs | Select only for legacy through-hole designs where thermal pad attachment is impractical |
| SS33-HF | SOD-123FL discrete Schottky diode; requires external bridge layout; VF = 0.33 V @ 1 A; CT = 110 pF | Lacks integrated bridge topology and soft-switching optimization for 200 kHz operation | Use when board area allows discrete implementation and lower VF outweighs EMI risk |
Compared with SB130-TB and SS33-HF, SDM1L30BLP-13 delivers superior EMI control via monolithic soft-switching design, enables automated assembly with its DFN5060-4 footprint, and provides AEC-Q101 assurance for mission-critical portable electronics - making it the preferred choice for next-generation wireless power receivers.
Availability
SDM1L30BLP-13 is available at Aetrix Electronics and suitable for wireless charging receivers, USB-C power delivery subsystems, and energy-harvesting sensor nodes requiring stable component supply, consistent thermal performance, and AEC-Q101 reliability validation.
Supply support for SDM1L30BLP-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The SDM1L30BLP belongs to Diodes' Schottky Bridge Rectifier product line, designed explicitly for high-frequency, low-loss AC/DC conversion in compact wireless power and energy harvesting systems.
FAQ
What is the thermal pad connection requirement for SDM1L30BLP-13?
The exposed thermal pad (Pin 3) must be soldered to a minimum 25 mm² copper pour with ≥4 thermal vias (0.3 mm diameter, filled) to achieve the specified RθJC of 15°C/W. Omitting this compromises power derating and may cause premature thermal shutdown in sustained 1 A operation.
Does SDM1L30BLP-13 support full-wave or half-wave rectification?
SDM1L30BLP-13 is a monolithic full-wave Schottky bridge - Pins 1 and 4 serve as AC inputs, Pin 2 is the DC+ output, and the exposed pad functions as DC–/ground. It does not support half-wave configuration without external re-routing.
How does the guard ring construction improve reliability?
The guard ring mitigates edge breakdown under high dv/dt stress by distributing electric field gradients away from the active junction periphery. This extends operational life under repeated 50 A surge events and improves ESD robustness to ±8 kV HBM - critical for wireless charging coils subject to magnetic coupling transients.
Can SDM1L30BLP-13 replace discrete Schottky diodes in existing bridge layouts?
Yes - its pinout matches industry-standard full-wave bridge footprints for DFN5060-4. However, due to its lower VF (0.42 V vs. typical 0.55 V) and reduced CT (90 pF), layout parasitics must be reviewed to avoid unintended resonance shifts in 200 kHz wireless power circuits.
SDM1L30BLP-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-VDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- Single Phase
- Technology:
- Schottky
- Voltage - Peak Reverse (Max):
- 30 V
- Current - Average Rectified (Io):
- 1 A
- Voltage - Forward (Vf) (Max) @ If:
- 420 mV @ 1 A
- Current - Reverse Leakage @ Vr:
- 1 mA @ 30 V
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN5060-4
SDM1L30BLP-13 FAQ
1.How can I place an order for SDM1L30BLP-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDM1L30BLP-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDM1L30BLP-13 reliable?
The price and inventory of SDM1L30BLP-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDM1L30BLP-13 is usually 5 days.
3.What payment methods are accepted for SDM1L30BLP-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDM1L30BLP-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDM1L30BLP-13?
SDM1L30BLP-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDM1L30BLP-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDM1L30BLP-13?
For technical support, including SDM1L30BLP-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDM1L30BLP-13 requirements.
6.How does Aetrix verify that SDM1L30BLP-13 is sourced from the original manufacturer or authorized distributors?
All SDM1L30BLP-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDM1L30BLP-13 meets industry standards.
7.What is the process for return or replacement of SDM1L30BLP-13?
All SDM1L30BLP-13 units undergo pre-shipment inspection (PSI). If there is an issue with SDM1L30BLP-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDM1L30BLP-13 part is unused and in its original packaging.
Return procedure for SDM1L30BLP-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SDM1L30BLP-13 Tags
-
HDS10M-13
Diodes Incorporated
-
CD-MBL106S
Bourns Inc.
-
MB10S-13
Diodes Incorporated
-
CD-MBL206SL
Bourns Inc.
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MB4S-TP
Micro Commercial Co
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MB6S-TP
Micro Commercial Co
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CD-MBL210S
Bourns Inc.
-
BAS3007ARPPE6327HTSA1
Infineon Technologies
-
DF02M
Diodes Incorporated
-
CD-MBL210SL
Bourns Inc.
-
DF04M
Diodes Incorporated
-
DF01M
Diodes Incorporated
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