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Diodes Incorporated SDM4A30EP3-7B

Part No.:
SDM4A30EP3-7B
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
0603 (1608 Metric)
Datasheet:
AetrixSDM4A30EP3-7B.pdf
Description:
DIODE SCHOTT 30V 4A X3-TSN1608-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,670

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Product details

Overview

SDM4A30EP3-7B from Diodes Incorporated is a 30 V, 4 A surface-mount Schottky barrier rectifier in X3-TSN1608-2 package, featuring 570 mV max forward voltage at 4 A, 250 µA max reverse leakage at 30 V, and 160 °C/W thermal resistance on standard FR-4 PCB. It serves as a low-loss blocking or boost diode in space-constrained portable power rails.

For engineers reviewing the SDM4A30EP3-7B datasheet, SDM4A30EP3-7B pinout, SDM4A30EP3-7B application, or SDM4A30EP3-7B equivalent, key selection criteria include forward voltage drop at rated current, high-temperature reverse leakage behavior, thermal resistance under defined PCB layout, and compatibility with 0.8 W to 2.1 W power dissipation limits depending on copper pad area.

Technical Context

This Schottky rectifier uses a planar metal–semiconductor junction optimized for low VF and suppressed IR drift over temperature. Its 107 pF junction capacitance at 4 V enables fast switching in DC-DC boost stages up to several MHz.

The device operates across –55 °C to +150 °C and supports repetitive peak forward surge current of 32 A (8.3 ms half-sine), making it suitable for transient-heavy input protection and synchronous rectification auxiliary paths where low conduction loss is critical.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM30 V - Maximum repetitive reverse voltage before breakdown; sets upper limit for reverse-biased blocking applications.
IO4 A - Average rectified output current at TA = 25°C on standard FR-4; derates to ~2.5 A at TC = 100°C per Figure 4.
VF Max570 mV at IF = 4 A - Directly determines conduction loss (Pcond ≈ IF × VF); enables >92% efficiency in 3.3 V–5 V boost converters.
IR Max250 µA at VR = 30 V - Low leakage preserves battery runtime in always-on reverse-protection circuits at elevated temperatures.
RθJA160 °C/W (min pad) / 60 °C/W (1″² pad) - Thermal performance defines safe operating area; dictates minimum copper area needed for 2.1 W dissipation.
CJ107 pF at VR = 4 V, f = 1 MHz - Limits high-frequency switching noise and affects zero-voltage switching timing in resonant topologies.

Pinout & Package

Package: X3-TSN1608-2 - ultra-compact surface-mount case measuring 1.60 mm × 0.80 mm × 0.25 mm (L × W × H), with NiAu-plated terminals and cathode dot marking.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Current entry point during forward conductionConnected to source/low-side switch node in boost or buck configurations; requires low-inductance trace routing.
Cathode (Pin 2)Current exit point during forward conduction; marked with dotConnected to output rail or inductor node; polarity must be verified visually before placement to prevent reverse bias failure.

Key Features

FeatureDesign Value
Low VF at high current480 mV typ. at 4 A - reduces I²R losses by ≥35% vs. comparable 40 V Schottkys, directly improving thermal margin in sealed enclosures.
Controlled high-temp IR100 µA max at 125°C, VR = 30 V - mitigates thermal runaway risk in automotive cabin modules or industrial edge sensors operating near 125°C.
Ultra-small footprint1.28 mm² board area - enables dual-diode layouts in <2 mm² total area for USB-C PD input protection or dual-rail OR-ing.
Lead-free & Green compliantHalogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - satisfies IPC-1752A Class 3 reporting and EU automotive ELV requirements.

Applications

USB Power Delivery Input ProtectionPortable DC-DC Boost Converter

Use Scenario: Prevents reverse current flow from VBUS into dead battery or faulty port during hot-plug events in USB-C PD sink designs.

IC Role / Device Role / Timing Role: Reverse protection diode placed between input connector and primary buck converter input capacitor.

Use Value: 250 µA IR at 30 V ensures <1 µW standby loss; 570 mV VF minimizes voltage drop across full 3 A PD3.0 input current.

Use Scenario: Provides high-efficiency energy transfer in single-cell Li-ion (2.7–4.2 V) to 5 V boost converters for Bluetooth audio or wearables.

IC Role / Device Role / Timing Role: Synchronous rectifier freewheeling diode in 1.5 MHz boost topology.

Use Value: 107 pF CJ and 570 mV VF enable >94% peak efficiency at 2 A load while maintaining clean switching waveforms.

Industrial Sensor Node Power RailAutomotive Body Control Module (BCM) Auxiliary Supply

Use Scenario: Isolates backup coin-cell supply from main 3.3 V rail in smart sensor nodes requiring fail-safe RTC operation during main power loss.

IC Role / Device Role / Timing Role: Blocking diode in parallel power path architecture.

Use Value: 160 °C/W RθJA allows direct mounting on 2 oz. FR-4 without thermal vias; –55 °C to +150 °C rating covers extended industrial ambient range.

Use Scenario: Supplies isolated 5 V rail for LIN transceivers or LED drivers in BCM submodules exposed to under-hood temperature cycling.

IC Role / Device Role / Timing Role: Reverse polarity protection diode on 12 V auxiliary input.

Use Value: 32 A IFSM withstands jump-start surges; AEC-Q101 qualification support available via Diodes' automotive change control process.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SS33HE3/57T30 V, 3 A, VF = 500 mV max @ 3 A; larger SMA package (4.5 mm × 2.7 mm)Higher VF at 4 A load; unsuitable for space-constrained 4 A designsSelect only if board area >10 mm² is available and thermal mass permits higher RθJA.
RB055LAM-30TR30 V, 5 A, VF = 450 mV max @ 5 A; SOD-123FL package (3.7 mm × 1.7 mm)Lower VF but 2.9× larger footprint; 220 µA IR at 30 V, 25°CPrefer when 5 A headroom or lower VF dominates over board area constraints.

Compared with SS33HE3/57T and RB055LAM-30TR, SDM4A30EP3-7B uniquely balances 4 A current handling, sub-0.6 V forward drop, and <1.3 mm² footprint-enabling compact, thermally efficient designs where both size and conduction loss are simultaneously constrained.

Availability

SDM4A30EP3-7B is available at Aetrix Electronics and suitable for USB-C PD input protection, portable DC-DC boost converters, and industrial sensor node power rails requiring stable component supply and consistent lead-free compliance.

Supply support for SDM4A30EP3-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SDM4A30EP3 belongs to Diodes' high-efficiency Schottky rectifier product line, engineered specifically for space- and thermal-constrained portable and industrial power conversion where low VF and controlled IR are critical.

FAQ

What is the maximum continuous forward current for SDM4A30EP3-7B at 100°C case temperature?

At TC = 100°C, the average rectified output current is approximately 2.5 A, as derived from Figure 4's derating curve. This value assumes mounting on a 1 inch square 2 oz. copper pad (RθJA = 60 °C/W). On minimal pad layout (RθJA = 160 °C/W), IO drops to ~1.3 A at the same temperature.

Does SDM4A30EP3-7B meet AEC-Q101 requirements for automotive use?

SDM4A30EP3-7B is not pre-qualified to AEC-Q101, but Diodes offers automotive-grade change control-including PPAP capability, IATF 16949 manufacturing, and AEC-Q101 qualification-for this part upon request. Customers must engage Diodes' automotive team to initiate the qualification process.

How does the X3-TSN1608-2 package compare to SOD-123 in board area and thermal performance?

X3-TSN1608-2 occupies 1.28 mm² (1.60 mm × 0.80 mm), roughly 40% smaller than SOD-123 (3.7 mm × 1.7 mm = 6.29 mm²). Its RθJA is 160 °C/W on minimal pads-comparable to SOD-123-but achieves 60 °C/W with 1 inch² copper, outperforming most SOD-123 variants limited to ~90–110 °C/W under identical conditions.

Can SDM4A30EP3-7B be used in synchronous rectification circuits?

No-SDM4A30EP3-7B is a passive Schottky rectifier, not a MOSFET-based synchronous rectifier controller or driver. It functions as a freewheeling or output rectifier in non-synchronous topologies. For synchronous rectification, a dedicated gate driver IC paired with a low-RDS(on) MOSFET is required.

SDM4A30EP3-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
0603 (1608 Metric)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
570 mV @ 4 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
250 µA @ 30 V
Capacitance @ Vr, F:
107pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X3-TSN1608-2
Operating Temperature - Junction:
-55°C ~ 150°C

SDM4A30EP3-7B FAQ

1.How can I place an order for SDM4A30EP3-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for SDM4A30EP3-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDM4A30EP3-7B reliable?

The price and inventory of SDM4A30EP3-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDM4A30EP3-7B is usually 5 days.

3.What payment methods are accepted for SDM4A30EP3-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDM4A30EP3-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDM4A30EP3-7B?

SDM4A30EP3-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDM4A30EP3-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDM4A30EP3-7B?

For technical support, including SDM4A30EP3-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDM4A30EP3-7B requirements.

6.How does Aetrix verify that SDM4A30EP3-7B is sourced from the original manufacturer or authorized distributors?

All SDM4A30EP3-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDM4A30EP3-7B meets industry standards.

7.What is the process for return or replacement of SDM4A30EP3-7B?

All SDM4A30EP3-7B units undergo pre-shipment inspection (PSI). If there is an issue with SDM4A30EP3-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDM4A30EP3-7B part is unused and in its original packaging.

Return procedure for SDM4A30EP3-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SDM4A30EP3-7B Tags

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