Diodes Incorporated SDM4A30EP3-7B
- Part No.:
- SDM4A30EP3-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- 0603 (1608 Metric)
- Datasheet:
-
SDM4A30EP3-7B.pdf
- Description:
- DIODE SCHOTT 30V 4A X3-TSN1608-2
- Quantity:
- Payment:

- Shipping:

Inventory:3,670
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Product details
Overview
SDM4A30EP3-7B from Diodes Incorporated is a 30 V, 4 A surface-mount Schottky barrier rectifier in X3-TSN1608-2 package, featuring 570 mV max forward voltage at 4 A, 250 µA max reverse leakage at 30 V, and 160 °C/W thermal resistance on standard FR-4 PCB. It serves as a low-loss blocking or boost diode in space-constrained portable power rails.
For engineers reviewing the SDM4A30EP3-7B datasheet, SDM4A30EP3-7B pinout, SDM4A30EP3-7B application, or SDM4A30EP3-7B equivalent, key selection criteria include forward voltage drop at rated current, high-temperature reverse leakage behavior, thermal resistance under defined PCB layout, and compatibility with 0.8 W to 2.1 W power dissipation limits depending on copper pad area.
Technical Context
This Schottky rectifier uses a planar metal–semiconductor junction optimized for low VF and suppressed IR drift over temperature. Its 107 pF junction capacitance at 4 V enables fast switching in DC-DC boost stages up to several MHz.
The device operates across –55 °C to +150 °C and supports repetitive peak forward surge current of 32 A (8.3 ms half-sine), making it suitable for transient-heavy input protection and synchronous rectification auxiliary paths where low conduction loss is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 30 V - Maximum repetitive reverse voltage before breakdown; sets upper limit for reverse-biased blocking applications. |
| IO | 4 A - Average rectified output current at TA = 25°C on standard FR-4; derates to ~2.5 A at TC = 100°C per Figure 4. |
| VF Max | 570 mV at IF = 4 A - Directly determines conduction loss (Pcond ≈ IF × VF); enables >92% efficiency in 3.3 V–5 V boost converters. |
| IR Max | 250 µA at VR = 30 V - Low leakage preserves battery runtime in always-on reverse-protection circuits at elevated temperatures. |
| RθJA | 160 °C/W (min pad) / 60 °C/W (1″² pad) - Thermal performance defines safe operating area; dictates minimum copper area needed for 2.1 W dissipation. |
| CJ | 107 pF at VR = 4 V, f = 1 MHz - Limits high-frequency switching noise and affects zero-voltage switching timing in resonant topologies. |
Pinout & Package
Package: X3-TSN1608-2 - ultra-compact surface-mount case measuring 1.60 mm × 0.80 mm × 0.25 mm (L × W × H), with NiAu-plated terminals and cathode dot marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry point during forward conduction | Connected to source/low-side switch node in boost or buck configurations; requires low-inductance trace routing. |
| Cathode (Pin 2) | Current exit point during forward conduction; marked with dot | Connected to output rail or inductor node; polarity must be verified visually before placement to prevent reverse bias failure. |
Key Features
| Feature | Design Value |
|---|---|
| Low VF at high current | 480 mV typ. at 4 A - reduces I²R losses by ≥35% vs. comparable 40 V Schottkys, directly improving thermal margin in sealed enclosures. |
| Controlled high-temp IR | 100 µA max at 125°C, VR = 30 V - mitigates thermal runaway risk in automotive cabin modules or industrial edge sensors operating near 125°C. |
| Ultra-small footprint | 1.28 mm² board area - enables dual-diode layouts in <2 mm² total area for USB-C PD input protection or dual-rail OR-ing. |
| Lead-free & Green compliant | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - satisfies IPC-1752A Class 3 reporting and EU automotive ELV requirements. |
Applications
| USB Power Delivery Input Protection | Portable DC-DC Boost Converter |
|---|---|
Use Scenario: Prevents reverse current flow from VBUS into dead battery or faulty port during hot-plug events in USB-C PD sink designs. IC Role / Device Role / Timing Role: Reverse protection diode placed between input connector and primary buck converter input capacitor. Use Value: 250 µA IR at 30 V ensures <1 µW standby loss; 570 mV VF minimizes voltage drop across full 3 A PD3.0 input current. | Use Scenario: Provides high-efficiency energy transfer in single-cell Li-ion (2.7–4.2 V) to 5 V boost converters for Bluetooth audio or wearables. IC Role / Device Role / Timing Role: Synchronous rectifier freewheeling diode in 1.5 MHz boost topology. Use Value: 107 pF CJ and 570 mV VF enable >94% peak efficiency at 2 A load while maintaining clean switching waveforms. |
| Industrial Sensor Node Power Rail | Automotive Body Control Module (BCM) Auxiliary Supply |
Use Scenario: Isolates backup coin-cell supply from main 3.3 V rail in smart sensor nodes requiring fail-safe RTC operation during main power loss. IC Role / Device Role / Timing Role: Blocking diode in parallel power path architecture. Use Value: 160 °C/W RθJA allows direct mounting on 2 oz. FR-4 without thermal vias; –55 °C to +150 °C rating covers extended industrial ambient range. | Use Scenario: Supplies isolated 5 V rail for LIN transceivers or LED drivers in BCM submodules exposed to under-hood temperature cycling. IC Role / Device Role / Timing Role: Reverse polarity protection diode on 12 V auxiliary input. Use Value: 32 A IFSM withstands jump-start surges; AEC-Q101 qualification support available via Diodes' automotive change control process. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SS33HE3/57T | 30 V, 3 A, VF = 500 mV max @ 3 A; larger SMA package (4.5 mm × 2.7 mm) | Higher VF at 4 A load; unsuitable for space-constrained 4 A designs | Select only if board area >10 mm² is available and thermal mass permits higher RθJA. |
| RB055LAM-30TR | 30 V, 5 A, VF = 450 mV max @ 5 A; SOD-123FL package (3.7 mm × 1.7 mm) | Lower VF but 2.9× larger footprint; 220 µA IR at 30 V, 25°C | Prefer when 5 A headroom or lower VF dominates over board area constraints. |
Compared with SS33HE3/57T and RB055LAM-30TR, SDM4A30EP3-7B uniquely balances 4 A current handling, sub-0.6 V forward drop, and <1.3 mm² footprint-enabling compact, thermally efficient designs where both size and conduction loss are simultaneously constrained.
Availability
SDM4A30EP3-7B is available at Aetrix Electronics and suitable for USB-C PD input protection, portable DC-DC boost converters, and industrial sensor node power rails requiring stable component supply and consistent lead-free compliance.
Supply support for SDM4A30EP3-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The SDM4A30EP3 belongs to Diodes' high-efficiency Schottky rectifier product line, engineered specifically for space- and thermal-constrained portable and industrial power conversion where low VF and controlled IR are critical.
FAQ
What is the maximum continuous forward current for SDM4A30EP3-7B at 100°C case temperature?
At TC = 100°C, the average rectified output current is approximately 2.5 A, as derived from Figure 4's derating curve. This value assumes mounting on a 1 inch square 2 oz. copper pad (RθJA = 60 °C/W). On minimal pad layout (RθJA = 160 °C/W), IO drops to ~1.3 A at the same temperature.
Does SDM4A30EP3-7B meet AEC-Q101 requirements for automotive use?
SDM4A30EP3-7B is not pre-qualified to AEC-Q101, but Diodes offers automotive-grade change control-including PPAP capability, IATF 16949 manufacturing, and AEC-Q101 qualification-for this part upon request. Customers must engage Diodes' automotive team to initiate the qualification process.
How does the X3-TSN1608-2 package compare to SOD-123 in board area and thermal performance?
X3-TSN1608-2 occupies 1.28 mm² (1.60 mm × 0.80 mm), roughly 40% smaller than SOD-123 (3.7 mm × 1.7 mm = 6.29 mm²). Its RθJA is 160 °C/W on minimal pads-comparable to SOD-123-but achieves 60 °C/W with 1 inch² copper, outperforming most SOD-123 variants limited to ~90–110 °C/W under identical conditions.
Can SDM4A30EP3-7B be used in synchronous rectification circuits?
No-SDM4A30EP3-7B is a passive Schottky rectifier, not a MOSFET-based synchronous rectifier controller or driver. It functions as a freewheeling or output rectifier in non-synchronous topologies. For synchronous rectification, a dedicated gate driver IC paired with a low-RDS(on) MOSFET is required.
SDM4A30EP3-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 0603 (1608 Metric)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 570 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 250 µA @ 30 V
- Capacitance @ Vr, F:
- 107pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X3-TSN1608-2
- Operating Temperature - Junction:
- -55°C ~ 150°C
SDM4A30EP3-7B FAQ
1.How can I place an order for SDM4A30EP3-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for SDM4A30EP3-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDM4A30EP3-7B reliable?
The price and inventory of SDM4A30EP3-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDM4A30EP3-7B is usually 5 days.
3.What payment methods are accepted for SDM4A30EP3-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDM4A30EP3-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDM4A30EP3-7B?
SDM4A30EP3-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDM4A30EP3-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDM4A30EP3-7B?
For technical support, including SDM4A30EP3-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDM4A30EP3-7B requirements.
6.How does Aetrix verify that SDM4A30EP3-7B is sourced from the original manufacturer or authorized distributors?
All SDM4A30EP3-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDM4A30EP3-7B meets industry standards.
7.What is the process for return or replacement of SDM4A30EP3-7B?
All SDM4A30EP3-7B units undergo pre-shipment inspection (PSI). If there is an issue with SDM4A30EP3-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDM4A30EP3-7B part is unused and in its original packaging.
Return procedure for SDM4A30EP3-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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