Diodes Incorporated SDMG0340L-7-F

Overview

SDMG0340L-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT-323 package, rated for 40 V peak repetitive reverse voltage, 30 mA forward continuous current, and 295–370 mV forward voltage at 1.0 mA. It features ultra-low VF, fast switching, and PN junction guard ring for ESD/transient protection-used in compact DC-DC converter output rectification and portable USB power path management.

For engineers reviewing the SDMG0340L-7-F datasheet, SDMG0340L-7-F pinout, SDMG0340L-7-F application, or SDMG0340L-7-F equivalent, key selection criteria include low forward voltage drop (≤370 mV @ 1 mA), 2.0 pF junction capacitance at 1 V, 200 mA non-repetitive surge rating, RoHS-compliant lead-free plating, and thermal resistance of 625 °C/W on FR-4 PCB.

Technical Context

This Schottky diode employs a planar silicon structure with a PN guard ring to suppress edge breakdown and improve transient robustness. Its low barrier height enables sub-400 mV forward conduction at microamp-to-milliamp bias levels, supporting high-efficiency low-voltage rectification in space-constrained designs.

The device operates across –40 °C to +125 °C ambient, with power derating beginning at 25 °C per the 200 mW maximum dissipation limit. Junction-to-ambient thermal resistance is specified at 625 °C/W under standardized FR-4 mounting conditions (1" × 0.85", AP02001 pad layout).

Key Specifications

Pinout & Package

Package: SOT-323 - ultra-small plastic surface-mount case (2.10 mm × 1.30 mm × 0.95 mm), UL 94V-0 rated, moisture sensitivity level 1, lead-free matte tin plating over Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAT54C-7-F and NSR0340HT1G, SDMG0340L-7-F offers the smallest board footprint among 40 V Schottkys while maintaining 150–1000 nA leakage at 10 V-critical for multi-year battery life in maintenance-free sensor nodes.

Availability

SDMG0340L-7-F is available at Aetrix Electronics and suitable for USB power management, low-power sensor interfaces, and miniature DC-DC converter designs requiring stable component supply, consistent parametric performance, and full RoHS/Green compliance.

Supply support for SDMG0340L-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the US, serving industrial, computing, consumer, and communications markets.

The SDMG0340L series belongs to Diodes' ultra-low-leakage Schottky portfolio, engineered specifically for space-constrained, battery-sensitive applications where forward voltage, capacitance, and ESD resilience must be simultaneously optimized.

FAQ

What is the maximum junction temperature for SDMG0340L-7-F?

The device supports operation from –40 °C to +125 °C junction temperature. At 25 °C ambient, its 200 mW power limit allows ~30 mA continuous forward current; derating follows the published curve-e.g., 100 mW at 75 °C ambient-based on 625 °C/W R_θJA under AP02001 PCB conditions.

Does SDMG0340L-7-F have a documented reverse recovery time?

Yes-Figure 4 shows typical t_rr ≤ 2 ns at I_F = 10 mA, confirming true Schottky behavior with no minority-carrier storage delay. This enables use in >100 MHz switching applications without tail current or ringing, unlike PN-junction diodes.

Is the SOT-323 package of SDMG0340L-7-F compatible with standard reflow profiles?

Yes-the device is qualified for lead-free reflow per J-STD-020D Level 1 (MSL 1), with peak temperature up to 260 °C. Its 0.006 g mass and thermally conductive Alloy 42 leadframe ensure uniform heating and minimize warpage risk during standard Pb-free profile ramp-soak-reflow cycles.

How does the PN guard ring affect ESD performance?

The integrated PN guard ring increases junction edge breakdown voltage and distributes ESD current laterally, achieving >8 kV HBM rating (per JEDEC JS-001). This eliminates need for external TVS in many low-energy I/O protection schemes, verified by Diodes Inc.'s internal qualification testing on production lots.